Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO₂/AlGaN gate stacks

Recovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO₂ gate dielectric. Results show temperature-invariant emission processes are present in both devices. Recessed-gate devices with SiO₂ dielectrics are observed to exhibit simultaneous trapping and emission processes during post-stress recovery

Deep Level Defect Studies in MOCVD-Grown In(x)Ga(1-x)As(1-y)N(y) Films Lattice-Matched to GaAs

Deep level defects in MOCVD-grown, unintentionally doped p-type InGaAsN films lattice matched to GaAs were investigated using deep level transient spectroscopy (DLTS) measurements. As-grown p-InGaAsN showed broad DLTS spectra suggesting that there exists a broad distribution of defect states within the band-gap. Moreover, the trap densities exceeded 10{sup 15} cm{sup {minus}3}. Cross sectional transmission electron microscopy (TEM) measurements showed no evidence for threading dislocations within the TEM resolution limit of 10{sup 7} cm{sup {minus}2}. A set of samples was annealed after growth for 1800 seconds at 650 C to investigate the thermal stability of the traps. The DLTS spectra of the annealed samples simplified considerably, revealing three distinct hole trap levels with energy levels of 0.10 eV, 0.23 eV, and 0.48 eV above the valence band edge with trap concentrations of 3.5 x 10{sup 14} cm{sup {minus}3}, 3.8 x 10{sup 14} cm {sup {minus}3}, and 8.2 x 10{sup 14} cm{sup {minus}3}, respectively. Comparison of as-grown and annealed DLTS spectra showed that post-growth annealing effectively reduced the total trap concentration by an order of magnitude across the bandgap. However, the concentration of a trap with an energy level of 0.48 eV was not affected by annealing indicating a higher thermal stability for this trap as compared with the overall distribution of shallow and deep traps

S7N079-D536 c DEEP LEVEL DEFECT STUDIES IN MOCVD-GROWN [email protected] LATTICE-MATCHED TO GaAs

ABSTRACT Deep level defects in MOCVD-grown, unintentionally doped p-type InGaAsN films lattice matched to GaAs were investigated using deep level transient spectroscopy (DLTS) measurements. As-grown p-InGaAsN showed broad DLTS spectra suggesting that there exists a broad distribution of defect states within the band-gap. Moreover, the trap densities exceeded 10'5cm-3. Cross sectional transmission electron microscopy (TEM) measurements showed no evidence for threading dislocations within the TEM resolution limit of 107cm-z. A set of samples was annealed after growth for 1800 seconds at 650 'C to investigate the thermal stability of the traps. The DLTS spectra of the annealed samples simplified considerably, revealing three distinct hole trap levels with energy levels of 0.10 eV, 0.23 eV, and 0.48 eV above the valence band edge with trap concentrations of 3.5x10'4 cm-3,3.8x10'4 cm-3, and 8.2x10'4 cm-3, respectively. Comparison of as-grown and annealed DLTS spectra showed thatpost-growth annealing effectively reduced the total trap concentration by an order of magnitude across the bandgap. However, the concentration of a trap with an energy level of 0.48 eV was not affected by annealing indicating a higher thermal stability for this trap as compared with the overall distribution of shallow and deep traps

Probing quantum confinement within single core-multishell nanowires

Theoretically core-multishell nanowires under a cross-section of hexagonal geometry should exhibit peculiar confinement effects. Using a hard X-ray nanobeam, here we show experimental evidence for carrier localization phenomena at the hexagon corners by combining synchrotron excited optical luminescence with simultaneous X-ray fluorescence spectroscopy. Applied to single coaxial n-GaN/InGaN multiquantum-well/p-GaN nanowires, our experiment narrows the gap between optical microscopy and high-resolution X-ray imaging and calls for further studies on the underlying mechanisms of optoelectronic nanodevices. © 2012 American Chemical Society.The authors thank Irina Snigireva and Armando Vicente Sole for their assistance with the SEM measurements and data processing using PyMca, respectively. We thank Remi Tocoulou and Peter Cloetens for their help and the ESRF for the beam time allocated. We also thank Andrei Rogalev for the valuable discussions and Gary Admans for the critical reading of the manuscript. This work has been partially supported by the NANOWIRING Marie Curie ITN (EU project no. PITN-GA-2010-265073), as well as by the EPIC-NANOTICS (TEC2011-29120-C05-04) and Q&C-LIGHT (S2009ESP-1503) from Spanish MEC and CAM, respectively.Martínez Criado, G.; Homs Puron, AA.; Alen, B.; Sans Tresserras, JÁ.; Segura Ruiz, J.; Molina Sánchez, A.; Susini, J.... (2012). Probing quantum confinement within single core-multishell nanowires. Nano Letters. 12(11):5829-5834. https://doi.org/10.1021/nl303178uS58295834121

Enantioselective component selection in multicomponent supramolecular gels

We investigate a two-component acid-amine gelation system in which chirality plays a vital role. A carboxylic acid based on a second generation l-lysine dendron interacts with chiral amines and subsequently assembles into supramolecular gel fibers. The chirality of the amine controls the assembly of the resulting diastereomeric complexes, even if this chirality is relatively "poor quality". Importantly, the selective incorporation of one enantiomer of an amine over the other into the gel network has been demonstrated, with the R amine that forms complexes which assemble into the most stable gel being primarily selected for incorporation. Thermodynamic control has been proven by forming a gel exclusively with an S amine, allowing the R enantiomer to diffuse through the gel network, and displacing it from the "solidlike" fibers, demonstrating that these gels adapt and evolve in response to chemical stimuli to which they are exposed. Excess amine, which remains unincorporated within the solidlike gel fiber network, can diffuse out and be reacted with an isocyanate, allowing us to quantify the enantioselectivity of component selection but also demonstrating how gels can act as selective reservoirs of potential reagents, releasing them on demand to undergo further reactions; hence, component-selective gel assembly can be coupled with controlled reactivity

The artificial intelligence-based model ANORAK improves histopathological grading of lung adenocarcinoma

The introduction of the International Association for the Study of Lung Cancer grading system has furthered interest in histopathological grading for risk stratification in lung adenocarcinoma. Complex morphology and high intratumoral heterogeneity present challenges to pathologists, prompting the development of artificial intelligence (AI) methods. Here we developed ANORAK (pyrAmid pooliNg crOss stReam Attention networK), encoding multiresolution inputs with an attention mechanism, to delineate growth patterns from hematoxylin and eosin-stained slides. In 1,372 lung adenocarcinomas across four independent cohorts, AI-based grading was prognostic of disease-free survival, and further assisted pathologists by consistently improving prognostication in stage I tumors. Tumors with discrepant patterns between AI and pathologists had notably higher intratumoral heterogeneity. Furthermore, ANORAK facilitates the morphological and spatial assessment of the acinar pattern, capturing acinus variations with pattern transition. Collectively, our AI method enabled the precision quantification and morphology investigation of growth patterns, reflecting intratumoral histological transitions in lung adenocarcinoma

Deep Levels in p-Type InGaAsN Lattice Matched to GaAs

Deep level transient spectroscopy (DLTS) measurements were utilized to investigate deep level defects in metal-organic chemical deposition (MOCVD)-grown unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the bandgap, with a dominant hole trap at E{sub v} + 0.10 eV. Post-growth annealing simplified the deep level spectra, enabling the identification of three distinct hole traps at 0.10 eV, 0.23 eV, and 0.48 eV above the valence band edge, with concentrations of 3.5 x 10{sup 14} cm{sup {minus}3}, 3.8 x 10{sup 14} cm{sup {minus}3}, and 8.2 x 10{sup 14} cm{sup {minus}3}, respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4 x 10{sup 14} cm{sup {minus}3} in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future

Deep Levels in p- and n-type InGaAsN for High Efficiency Multi-Junction III-V Solar Cells

Red Teaming is an advanced form of assessment that can be used to identify weaknesses in a variety of cyber systems. it is especially beneficial when the target system is still in development when designers can readily affect improvements. This paper discusses the red team analysis process and the author's experiences applying this process to five selected Information Technology Office (ITO) projects. Some detail of the overall methodology, summary results from the five projects, and lessons learned are contained within this paper