688 research outputs found
Split-disk micro-lasers: Tunable whispering gallery mode cavities
Optical micro-cavities of various types have emerged as promising photonic structures, for both the investigation of fundamental science in cavity quantum electrodynamics and simultaneously for various applications, e.g., lasers, filters, or modulators. In either branch a demand for adjustable and tunable photonic devices becomes apparent, which has been mainly based on the modification of the refractive index of the micro-resonators so far. In this paper, we report on a novel type of whispering gallery mode resonator where resonance tuning is achieved by modification of the configuration. This is realized by polymeric split-disks consisting of opposing half-disks with an intermediate air gap. Functionality of the split-disk concept and its figures of merit like low-threshold lasing are demonstrated for laser dye-doped split-disks fabricated by electron beam lithography on Si substrates. Reversible resonance tuning is achieved for split-disks structured onto elastomeric substrates by direct laser writing. The gap width and hence the resonance wavelength can be well-controlled by mechanically stretching the elastomer and exploiting the lateral shrinkage of the substrate. We demonstrate a broad spectral tunability of laser modes by more than three times the free spectral range. These cavities have the potential to form a key element of flexible and tunable photonic circuits based on polymers
A solar disinfection water treatment system for remote communities
Abstract not availablePeter Kalt, Cristian Birzer, Harrison Evans, Anthony Liew, Mark Padovan, Michael Watchma
Similarity and contrasts between thermodynamic properties at the critical point of liquid alkali metals and of electron-hole droplets
The recent experimental study by means of time-resolved luminescence
measurements of an electron-hole liquid (EHL) in diamond by Shimano et al.
[Phys. Rev. Lett. 88 (2002) 057404] prompts us to compare and contrast critical
temperature T_c and critical density n_c relations in liquid alkali metals with
those in electron-hole liquids. The conclusion drawn is that these systems have
similarities with regard to critical properties. In both cases the critical
temperature is related to the cube root of the critical density. The existence
of this relation is traced to Coulomb interactions and to systematic trends in
the dielectric constant of the electron-hole systems. Finally a brief
comparison between the alkalis and EHLs of the critical values for the
compressibility ratio Z_c is also given
Anthocyanins
This book contains 20 articles published in Molecules that concern the color quality of food and wine, anthocyanin biosynthesis and regulation, anthocyanin composition and the biological properties of anthocyanin pigments
Palladium-catalysed synthesis of arylnaphthoquinones as antiprotozoal and antimycobacterial agents
Malaria and tuberculosis are still among the leading causes of death in low-income countries. The 1,4-naphthoquinone (NQ) scaffold can be found in a variety of anti-infective agents. Herein, we report an optimised, high yield process for the preparation of various 2-arylnaphthoquinones by a palladium-catalysed Suzuki reaction. All synthesised compounds were evaluated for their in-vitro antiprotozoal and antimycobacterial activity. Antiprotozoal activity was assessed against Plasmodium falciparum (P.f.) NF54 and Trypanosoma brucei rhodesiense (T.b.r.) STIB900, and antimycobacterial activity against Mycobacterium smegmatis (M.s.) mc(2) 155. Substitution with pyridine and pyrimidine rings significantly increased antiplasmodial potency of our compounds. The 2-aryl-NQs exhibited trypanocidal activity in the nM range with a very favourable selectivity profile. (Pseudo)halogenated aryl-NQs were found to have a pronounced effect indicating inhibition of mycobacterial efflux pumps. Cytotoxicity of all compounds towards L6 cells was evaluated and the respective selectivity indices (SI) were calculated. In addition, the physicochemical parameters of the synthesised compounds were discussed
Ab initio and nuclear inelastic scattering studies of FeSi/GaAs heterostructures
The structure and dynamical properties of the FeSi/GaAs(001) interface
are investigated by density functional theory and nuclear inelastic scattering
measurements. The stability of four different atomic configurations of the
FeSi/GaAs multilayers is analyzed by calculating the formation energies and
phonon dispersion curves. The differences in charge density, magnetization, and
electronic density of states between the configurations are examined. Our
calculations unveil that magnetic moments of the Fe atoms tend to align in a
plane parallel to the interface, along the [110] direction of the FeSi
crystallographic unit cell. In some configurations, the spin polarization of
interface layers is larger than that of bulk FeSi. The effect of the
interface on element-specific and layer-resolved phonon density of states is
discussed. The Fe-partial phonon density of states measured for the FeSi
layer thickness of three monolayers is compared with theoretical results
obtained for each interface atomic configuration. The best agreement is found
for one of the configurations with a mixed Fe-Si interface layer, which
reproduces the anomalous enhancement of the phonon density of states below 10
meVComment: 14 pages, 9 figures, 4 table
Exciton spin relaxation in single semiconductor quantum dots
We study the relaxation of the exciton spin (longitudinal relaxation time
) in single asymmetrical quantum dots due to an interplay of the
short--range exchange interaction and acoustic phonon deformation. The
calculated relaxation rates are found to depend strongly on the dot size,
magnetic field and temperature. For typical quantum dots and temperatures below
100 K, the zero--magnetic field relaxation times are long compared to the
exciton lifetime, yet they are strongly reduced in high magnetic fields. We
discuss explicitly quantum dots based on (In,Ga)As and (Cd,Zn)Se semiconductor
compounds.Comment: accepted for Phys. Rev.
Temperature dependence of polarization relaxation in semiconductor quantum dots
The decay time of the linear polarization degree of the luminescence in
strongly confined semiconductor quantum dots with asymmetrical shape is
calculated in the frame of second-order quasielastic interaction between
quantum dot charge carriers and LO phonons. The phonon bottleneck does not
prevent significantly the relaxation processes and the calculated decay times
can be of the order of a few tens picoseconds at temperature K,
consistent with recent experiments by Paillard et al. [Phys. Rev. Lett.
{\bf86}, 1634 (2001)].Comment: 4 pages, 4 figure
Optical properties of (AlxGa1-x)(0.52)In0.48P at the crossover from a direct-gap to an indirect-gap semiconductor
The optical properties and the dynamics of excitons and the electron-hole plasma have been studied in disordered (AlxGa1âx)0.52In0.48P near to the direct-to-indirect band gap crossover. In particular we have investigated three epitaxial layers grown by solid-source molecular beam epitaxy with varying Al content x. Two of them have compositions in the immediate vicinity of the crossover point, the other is assigned to the indirect-gap regime. Both direct and indirect recombination processes contribute to the photon emission from the material. Since the relative importance of the different recombination processes depends strongly on temperature, excitation intensity, and excitation pulse duration, the processes can be identified by changing these parameters. As a result, we can determine the relative alignment of the conduction band minima and the distribution of the electrons among them. At high excitation levels the two crossover samples show stimulated emission at a photon energy of âŒ2.29âeV, i.e., in the green spectral range. Using the variable stripe length method, we find an optical gain of up to âŒ600âcmâ1 at excitation levels of âŒ350âkW/cm2.Stimulated emission involves direct recombination. This conclusion is reached from the experiments and from line-shape modeling, including a self-consistent treatment of populations and renormalization of the conduction band minima
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