Antiinflammatory Therapy with Canakinumab for Atherosclerotic Disease

Background: Experimental and clinical data suggest that reducing inflammation without affecting lipid levels may reduce the risk of cardiovascular disease. Yet, the inflammatory hypothesis of atherothrombosis has remained unproved. Methods: We conducted a randomized, double-blind trial of canakinumab, a therapeutic monoclonal antibody targeting interleukin-1β, involving 10,061 patients with previous myocardial infarction and a high-sensitivity C-reactive protein level of 2 mg or more per liter. The trial compared three doses of canakinumab (50 mg, 150 mg, and 300 mg, administered subcutaneously every 3 months) with placebo. The primary efficacy end point was nonfatal myocardial infarction, nonfatal stroke, or cardiovascular death. RESULTS: At 48 months, the median reduction from baseline in the high-sensitivity C-reactive protein level was 26 percentage points greater in the group that received the 50-mg dose of canakinumab, 37 percentage points greater in the 150-mg group, and 41 percentage points greater in the 300-mg group than in the placebo group. Canakinumab did not reduce lipid levels from baseline. At a median follow-up of 3.7 years, the incidence rate for the primary end point was 4.50 events per 100 person-years in the placebo group, 4.11 events per 100 person-years in the 50-mg group, 3.86 events per 100 person-years in the 150-mg group, and 3.90 events per 100 person-years in the 300-mg group. The hazard ratios as compared with placebo were as follows: in the 50-mg group, 0.93 (95% confidence interval [CI], 0.80 to 1.07; P = 0.30); in the 150-mg group, 0.85 (95% CI, 0.74 to 0.98; P = 0.021); and in the 300-mg group, 0.86 (95% CI, 0.75 to 0.99; P = 0.031). The 150-mg dose, but not the other doses, met the prespecified multiplicity-adjusted threshold for statistical significance for the primary end point and the secondary end point that additionally included hospitalization for unstable angina that led to urgent revascularization (hazard ratio vs. placebo, 0.83; 95% CI, 0.73 to 0.95; P = 0.005). Canakinumab was associated with a higher incidence of fatal infection than was placebo. There was no significant difference in all-cause mortality (hazard ratio for all canakinumab doses vs. placebo, 0.94; 95% CI, 0.83 to 1.06; P = 0.31). Conclusions: Antiinflammatory therapy targeting the interleukin-1β innate immunity pathway with canakinumab at a dose of 150 mg every 3 months led to a significantly lower rate of recurrent cardiovascular events than placebo, independent of lipid-level lowering. (Funded by Novartis; CANTOS ClinicalTrials.gov number, NCT01327846.

The microstructure of Cu In,Ga S2 solar cell absorber films prepared using three stage and two stage evaporation

The microstructure of three stage Cu poor Cu In,Ga S2 solar cell absorbers has been compared with that of two stage Cu rich absorbers using high resolution Transmission Electron Microscopy. It was found that the grains from three stage evaporation have more stacking faults, and most of the grain boundaries are irregular, such as sawtooth shaped. The grains from two stage evaporation have less defects, and the grain boundaries are straight. The difference of growth mechanisms between three stage and two stage evaporation are discussed and compared to the case of Cu In,Ga Se

Instantaneous preparation of CuIn S 1 x , Se x 2 films by means of sparks using microwave irradiation

CuIn S1 amp; 8722;x,Sex 2 CISSe films aimed at flexible solar cells were directly prepared on Ti foils from elemental In, Cu, S, and Se particle precursor using microwave irradiation. The formation of the CISSe phase was deduced from X ray diffraction XRD patterns. The 112 peaks of CISSe were well defined and the lattice con stants increased in direct proportion to the S S Se ratio almost satisfying Vegard s law. In particular, CuInSe2 was formed in the desired chalcopyrite lattice as indicated by the presence of 101 , 103 and 211 peaks in the XRD pattern. Porous surfaces and formation of by products were avoided by employing an evaporated In and Cu films instead of In and Cu particle

Cu2ZnSnSe4 films directly synthesized by the reaction for 1 s from elemental metal precursor using a spot welding machine

Cu2ZnSn S1 y ,Sey 4 CZTSSe solid solution films were successfully prepared by non vacuum, instantaneous, direct synthesis from Sn Zn Cu S and Se suspension precursor films on Mo foil by passing an electrical current through the Mo foil substrate. The structure and composition of the resulting films were dependent on the energy of the spot welding machine used as a power source. In a power range between 0.66 and 0.81 kVA, at Sn Sn Zn 0.7, single phase CZTSSe crystals exhibiting a kesterite stannite structure were observe

Direct synthesis of CuIn Sex, S1 x 2 films from elemental In, Cu, Se, S particle precursor films and its dependence on energy

CuIn Sex, S1 amp; 8722; x 2 films were prepared by means of non vacuum, instantaneous, direct synthesis from elemental In, Cu, Se and S particle precursor films by passing an electrical current with precise control through the metal substrate. For a constant reaction period of 1 s, unreacted elemental particles remained in the films for powers below 1 kV A, whereas the reaction to CuIn Sex, S1 amp; 8722; x 2 x 1 appeared to be complete at higher power. Chalcopyrite structure was observed in the range from 1.08 kV A to 1.24 kV A, the sphalerite structure appeared over 1.35 kV A. X ray diffraction shows single 112 peaks of CuIn Sex, S1 amp; 8722; x 2 and the peak position agreed with the nominal composition of the precursors

Electric properties of Cu poor and Cu rich Cu In,Ga S2 films after O2 annealing

We compare the fundamental electric properties of Cu poor and Cu rich Cu In,Ga S2 films before and after annealing, respectively. It has been found that the hole density of Cu poor films increases after annealing in a O2 S combined atmosphere, whereas annealing in S only does not produce a significant effect. We conclude that the oxygen is effective for the passivation of donor type defects in the Cu poor Cu In,Ga S2 films. In the case of Cu rich films, the hole density also increases with O2 S annealing. However, annealing in sulphur atmosphere no oxygen gas in this case has comparable consequences. These observations suggest fundamental differences in the incorporation mechanisms of oxygen and sulphur in both types of the film. A tentative model is presented, taking into account results from micro structural characterization of the film

Combined analysis of spatially resolved electronic structure and composition on a cross section of a thin film Cu In1 xGax S2 solar cell

In this work we present a combination of two spatially resolved experimental methods to analyse correlations be tween distributions of element concentrations and elec tronic structure of cross sections of thin film semiconductor devices. We applied these methods to a cross section of a thin film Cu In1 xGax S2 CdS ZnO solar cell. The electronic structure was analysed by measuring the work function of the cross section by Kelvin probe force microscopy. To determine the gallium concentration of the cross section of the Cu In1 xGax S2 layer we performed energy dispersive X ray analysis EDX . We were able to match the spatial coordinates of these measurements. By this we could observe a correlation between the gallium concentration of the Cu In1 xGax S2 layer and its work function. The EDX meas urements show that the Cu In1 xGax S2 layer features a two layer structure one layer with a low gallium concentration x amp; 8776; 0 and one at the back of the solar cell with a high gal lium concentration x amp; 8776; 1 . Furthermore we discuss the influ ence of the two layer structure of the Cu In1 xGax S2 absorber layer on the photovoltaic properties of the solar cell. The spectral quantum efficiency was measured on the same sam ple before the depth resolved data were taken. We observe an improvement of short circuit current and overall efficiency of the Cu In1 xGax S2 CdS ZnO solar cell compared to a gallium free CuInS2 CdS ZnO solar cell

Wide band gap Cu In,Ga S2 solar cells with the junction prepared on the rear surface of the three stage Cu deficient absorber films

Cu In,Ga S 2 CIGS solar cells were prepared from Cu deficient absorber films using a lift off process and then compared with CIGS solar cells prepared without using the lift off process. The lift off was achieved through sacrificial molybdenum layers and optimized by different modifications of the latter. We report on the properties of the detached surfaces in terms of their dependence on the composition of the films and compare them to those of the original upper surfaces. This comparison suggests the advantageous properties of the detached surfaces in terms of composition, absence of Cu deficient phases, and effective dopin