456 research outputs found
Electrical detection of 31P spin quantum states
In recent years, a variety of solid-state qubits has been realized, including
quantum dots, superconducting tunnel junctions and point defects. Due to its
potential compatibility with existing microelectronics, the proposal by Kane
based on phosphorus donors in Si has also been pursued intensively. A key issue
of this concept is the readout of the P quantum state. While electrical
measurements of magnetic resonance have been performed on single spins, the
statistical nature of these experiments based on random telegraph noise
measurements has impeded the readout of single spin states. In this letter, we
demonstrate the measurement of the spin state of P donor electrons in silicon
and the observation of Rabi flops by purely electric means, accomplished by
coherent manipulation of spin-dependent charge carrier recombination between
the P donor and paramagnetic localized states at the Si/SiO2 interface via
pulsed electrically detected magnetic resonance. The electron spin information
is shown to be coupled through the hyperfine interaction with the P nucleus,
which demonstrates the feasibility of a recombination-based readout of nuclear
spins
Silicon Atomic Quantum Dots Enable Beyond-CMOS Electronics
We review our recent efforts in building atom-scale quantum-dot cellular
automata circuits on a silicon surface. Our building block consists of silicon
dangling bond on a H-Si(001) surface, which has been shown to act as a quantum
dot. First the fabrication, experimental imaging, and charging character of the
dangling bond are discussed. We then show how precise assemblies of such dots
can be created to form artificial molecules. Such complex structures can be
used as systems with custom optical properties, circuit elements for
quantum-dot cellular automata, and quantum computing. Considerations on
macro-to-atom connections are discussed.Comment: 28 pages, 19 figure
Electro-optically tunable microring resonators in lithium niobate
Optical microresonators have recently attracted a growing attention in the
photonics community. Their applications range from quantum electro-dynamics to
sensors and filtering devices for optical telecommunication systems, where they
are likely to become an essential building block. The integration of nonlinear
and electro-optical properties in the resonators represents a very stimulating
challenge, as it would incorporate new and more advanced functionality. Lithium
niobate is an excellent candidate material, being an established choice for
electro-optic and nonlinear optical applications. Here we report on the first
realization of optical microring resonators in submicrometric thin films of
lithium niobate. The high index contrast films are produced by an improved
crystal ion slicing and bonding technique using benzocyclobutene. The rings
have radius R=100 um and their transmission spectrum has been tuned using the
electro-optic effect. These results open new perspectives for the use of
lithium niobate in chip-scale integrated optical devices and nonlinear optical
microcavities.Comment: 15 pages, 8 figure
Coherent control of macroscopic quantum states in a single-Cooper-pair box
A small superconducting electrode (a single-Cooper-pair box) connected to a
reservoir via a Josephson junction constitutes an artificial two-level system,
in which two charge states that differ by 2e are coupled by tunneling of Cooper
pairs. Despite its macroscopic nature involving a large number of electrons,
the two-level system shows coherent superposition of the two charge states, and
has been suggested as a candidate for a qubit, i.e. a basic component of a
quantum computer. Here we report on time-domain observation of the coherent
quantum-state evolution in the two-level system by applying a short voltage
pulse that modifies the energies of the two levels nonadiabatically to control
the coherent evolution. The resulting state was probed by a tunneling current
through an additional probe junction. Our results demonstrate coherent
operation and measurement of a quantum state of a single two-level system, i.e.
a qubit, in a solid-state electronic device.Comment: 4 pages, 4 figures; to be published in Natur
Universal Quantum Computation with the Exchange Interaction
Experimental implementations of quantum computer architectures are now being
investigated in many different physical settings. The full set of requirements
that must be met to make quantum computing a reality in the laboratory [1] is
daunting, involving capabilities well beyond the present state of the art. In
this report we develop a significant simplification of these requirements that
can be applied in many recent solid-state approaches, using quantum dots [2],
and using donor-atom nuclear spins [3] or electron spins [4]. In these
approaches, the basic two-qubit quantum gate is generated by a tunable
Heisenberg interaction (the Hamiltonian is between spins and ), while the one-qubit gates require the control
of a local Zeeman field. Compared to the Heisenberg operation, the one-qubit
operations are significantly slower and require substantially greater materials
and device complexity, which may also contribute to increasing the decoherence
rate. Here we introduce an explicit scheme in which the Heisenberg interaction
alone suffices to exactly implement any quantum computer circuit, at a price of
a factor of three in additional qubits and about a factor of ten in additional
two-qubit operations. Even at this cost, the ability to eliminate the
complexity of one-qubit operations should accelerate progress towards these
solid-state implementations of quantum computation.Comment: revtex, 2 figures, this version appeared in Natur
Quiet SDS Josephson Junctions for Quantum Computing
Unconventional superconductors exhibit an order parameter symmetry lower than
the symmetry of the underlying crystal lattice. Recent phase sensitive
experiments on YBCO single crystals have established the d-wave nature of the
cuprate materials, thus identifying unambiguously the first unconventional
superconductor. The sign change in the order parameter can be exploited to
construct a new type of s-wave - d-wave - s-wave Josephson junction exhibiting
a degenerate ground state and a double-periodic current-phase characteristic.
Here we discuss how to make use of these special junction characteristics in
the construction of a quantum computer. Combining such junctions together with
a usual s-wave link into a SQUID loop we obtain what we call a `quiet' qubit
--- a solid state implementation of a quantum bit which remains optimally
isolated from its environment.Comment: 4 pages, 2 ps-figure
Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires
Coupled electron spins in semiconductor double quantum dots hold promise as
the basis for solid-state qubits. To date, most experiments have used III-V
materials, in which coherence is limited by hyperfine interactions. Ge/Si
heterostructure nanowires seem ideally suited to overcome this limitation: the
predominance of spin-zero nuclei suppresses the hyperfine interaction and
chemical synthesis creates a clean and defect-free system with highly
controllable properties. Here we present a top gate-defined double quantum dot
based on Ge/Si heterostructure nanowires with fully tunable coupling between
the dots and to the leads. We also demonstrate a novel approach to charge
sensing in a one-dimensional nanostructure by capacitively coupling the double
dot to a single dot on an adjacent nanowire. The double quantum dot and
integrated charge sensor serve as an essential building block required to form
a solid-state spin qubit free of nuclear spin.Comment: Related work at http://marcuslab.harvard.edu and
http://cmliris.harvard.ed
Silicon-based spin and charge quantum computation
Silicon-based quantum-computer architectures have attracted attention because
of their promise for scalability and their potential for synergetically
utilizing the available resources associated with the existing Si technology
infrastructure. Electronic and nuclear spins of shallow donors (e.g.
phosphorus) in Si are ideal candidates for qubits in such proposals due to the
relatively long spin coherence times. For these spin qubits, donor electron
charge manipulation by external gates is a key ingredient for control and
read-out of single-qubit operations, while shallow donor exchange gates are
frequently invoked to perform two-qubit operations. More recently, charge
qubits based on tunnel coupling in P substitutional molecular ions in Si
have also been proposed. We discuss the feasibility of the building blocks
involved in shallow donor quantum computation in silicon, taking into account
the peculiarities of silicon electronic structure, in particular the six
degenerate states at the conduction band edge. We show that quantum
interference among these states does not significantly affect operations
involving a single donor, but leads to fast oscillations in electron exchange
coupling and on tunnel-coupling strength when the donor pair relative position
is changed on a lattice-parameter scale. These studies illustrate the
considerable potential as well as the tremendous challenges posed by donor spin
and charge as candidates for qubits in silicon.Comment: Review paper (invited) - to appear in Annals of the Brazilian Academy
of Science
Scanning-probe spectroscopy of semiconductor donor molecules
Semiconductor devices continue to press into the nanoscale regime, and new
applications have emerged for which the quantum properties of dopant atoms act
as the functional part of the device, underscoring the necessity to probe the
quantum structure of small numbers of dopant atoms in semiconductors[1-3].
Although dopant properties are well-understood with respect to bulk
semiconductors, new questions arise in nanosystems. For example, the quantum
energy levels of dopants will be affected by the proximity of nanometer-scale
electrodes. Moreover, because shallow donors and acceptors are analogous to
hydrogen atoms, experiments on small numbers of dopants have the potential to
be a testing ground for fundamental questions of atomic and molecular physics,
such as the maximum negative ionization of a molecule with a given number of
positive ions[4,5]. Electron tunneling spectroscopy through isolated dopants
has been observed in transport studies[6,7]. In addition, Geim and coworkers
identified resonances due to two closely spaced donors, effectively forming
donor molecules[8]. Here we present capacitance spectroscopy measurements of
silicon donors in a gallium-arsenide heterostructure using a scanning probe
technique[9,10]. In contrast to the work of Geim et al., our data show
discernible peaks attributed to successive electrons entering the molecules.
Hence this work represents the first addition spectrum measurement of dopant
molecules. More generally, to the best of our knowledge, this study is the
first example of single-electron capacitance spectroscopy performed directly
with a scanning probe tip[9].Comment: In press, Nature Physics. Original manuscript posted here; 16 pages,
3 figures, 5 supplementary figure
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