Fundamental Image Theory: An Integrated Model of Trauma

Historically, trauma theory and intervention has focused on “actual or threatened death or serious injury” (DSM-IV; APA, 1994). More recently, the field has broadened its consideration to a range of trauma and stressor related disorders, including perpetration induced traumautic stress (PITS; MacNair, 2015). Violence perpetration has negative implications on a personal, interpersonal, and group level, but a review of the literature reveals a significant gap in our understanding of perpetration-induced traumatic stress, including 2 fundamental questions: how does perpetrating violence cause trauma, and how can we treat this trauma? None of the existing psychological models adequately answer the first question, limiting their ability to effectively address the second. Existing literature does reveal that despite the diversity in triggering events and contextual factors, post-trauma symptoms remain remarkably similar between PITS and traditional PTSD, indicating a common-factor scheme for trauma. This dissertation introduces Fundamental Image Theory (FIT), a new theory to address the gap in conceptualizing trauma and identify common factors across traumatic stressors. It proposes that the common element of trauma is its disruption of the fundamental design God enacted when creating humans: the imago dei. FIT integrates Biblical theology and psychological science to provide a model for healthy human functioning that is sustained through meeting a set of essential needs derived from the imago dei (McMinn & Campbell, 2007). FIT explains how trauma interferes with meeting these essential needs and disrupts healthy functioning as result. The model is then applied specifically to PITS to provide guidance for treating the disorder

Concentrations of higher dicarboxylic acids C5 – C13 in fresh snow samples collected at the High Alpine Research Station Jungfraujoch during CLACE 5 and 6

Samples of freshly fallen snow were collected at the high alpine research station Jungfraujoch (Switzerland) in February and March 2006 and 2007, during the Cloud and Aerosol Characterization Experiments (CLACE) 5 and 6. In this study a new technique has been developed and demonstrated for the measurement of organic acids in fresh snow. The melted snow samples were subjected to solid phase extraction and resulting solutions analysed for organic acids by HPLC-MS-TOF using negative electrospray ionization. A series of linear dicarboxylic acids from C5 to C13 and phthalic acid, were identified and quantified. In several samples the biogenic acid pinonic acid was also observed. In fresh snow the median concentration of the most abundant acid, adipic acid, was 0.69 micro g L -1 in 2006 and 0.70 micro g L -1 in 2007. Glutaric acid was the second most abundant dicarboxylic acid found with median values of 0.46 micro g L -1 in 2006 and 0.61 micro g L -1 in 2007, while the aromatic acid phthalic acid showed a median concentration of 0.34 micro g L -1 in 2006 and 0.45 micro g L -1 in 2007. The concentrations in the samples from various snowfall events varied significantly, and were found to be dependent on the back trajectory of the air mass arriving at Jungfraujoch. Air masses of marine origin showed the lowest concentrations of acids whereas the highest concentrations were measured when the air mass was strongly influenced by boundary layer air

Erratum: ‘‘Ellipsometric characterization of In0.52Al0.48As and of modulation doped field effect transistor structures on InP substrates’’ [Appl. Phys. Lett. 62, 1411 (1993)]

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/69682/2/APPLAB-63-1-121-1.pd

Ellipsometric study of InGaAs MODFET material

In(x)Ga(1-x)As based MODFET (modulation doped field effect transistor) material was grown by molecular beam epitaxy on semi-insulating InP substrates. Several structures were made, including lattice matched and strained layer InGaAs. All structures also included several layers of In(0.52)Al(0.48)As. Variable angle spectroscopic ellipsometry was used to characterize the structures. The experimental data, together with the calibration function for the constituent materials, were analyzed to yield the thickness of all the layers of the MODFET structure. Results of the ellipsometrically determined thicknesses compare very well with the reflection high energy electron diffraction in situ thickness measurements

Dielectric function of InGaAs in the visible

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X(0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data

Effects of transcranial direct current stimulation on neural networks in young and older adults

Transcranial direct current stimulation (tDCS) may be a viable tool to improve motor and cognitive function in advanced age. However, although a number of studies have demonstrated improved cognitive performance in older adults, other studies have failed to show restorative effects. The neural effects of beneficial stimulation response in both age groups is lacking. In the current study, tDCS was administered during simultaneous fMRI in 42 healthy young and older participants. Semantic word generation and motor speech baseline tasks were used to investigate behavioral and neural effects of uni-and bihemispheric motor cortex tDCS in a three-way, crossover, sham tDCS controlled design. Independent components analysis assessed differences in task-related activity between the two age groups and tDCS effects. at the network level. We also explored whether laterality of language network organization was effected by tDCS. Behaviorally, both active tDCS conditions significantly improved semantic word retrieval performance in young and older adults and were comparable between groups and stimulation conditions. Network-level tDCS effects were identified in the ventral and dorsal anterior cingulate networks in the combined sample during semantic fluency and motor speech tasks. In addition, a shift toward enhanced left laterality was identified in the older adults for both active stimulation conditions. Thus, tDCS results in common network-level modulations and behavioral improvements for both age groups, with an additional effect of increasing left laterality in older adults

Study of InGaAs based MODFET structures using variable angle spectroscopic ellipsometry

Variable angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs based MODFET structures. Strained and unstrained InGaAs channels were made by MBE on InP substrates and by MOCVD on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10 percent of the growth calibration results. The MBE made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice matched concentration