313 research outputs found

    Merging high-resolution satellite-based precipitation fields and point-scale rain gauge measurements-A case study in Chile

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    With high spatial-temporal resolution, Satellite-based Precipitation Estimates (SPE) are becoming valuable alternative rainfall data for hydrologic and climatic studies but are subject to considerable uncertainty. Effective merging of SPE and ground-based gauge measurements may help to improve precipitation estimation in both better resolution and accuracy. In this study, a framework for merging satellite and gauge precipitation data is developed based on three steps, including SPE bias adjustment, gauge observation gridding, and data merging, with the objective to produce high-quality precipitation estimates. An inverse-root-mean-square-error weighting approach is proposed to combine the satellite and gauge estimates that are in advance adjusted and gridded, respectively. The model is applied and tested with the Precipitation Estimation from Remotely Sensed Information using Artificial Neural Networks-Cloud Classification System (PERSIANN-CCS) estimates (daily, 0.04° × 0.04°) over Chile, for the 6 year period of 2009-2014. Daily observations from about 90% of collected gauges over the study area are used for model calibration; the rest of the gauged data are regarded as ground “truth” for validation. Evaluation results indicate high effectiveness of the model in producing high-resolution-precision precipitation data. Compared to reference data, the merged data (daily) show correlation coefficients, probabilities of detection, root-mean-square errors, and absolute mean biases that were consistently improved from the original PERSIANN-CCS estimates. The cross-validation evidences that the framework is effective in providing high-quality estimates even over nongauged satellite pixels. The same method can be applied globally and is expected to produce precipitation products in near real time by integrating gauge observations with satellite estimates

    Characterisation of multilayer ramp-type ReBa2Cu3O7-delta structures by scanning probe microscopy and high-resolution electron microscopy

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    We studied the morphology of ramps in REBa2Cu3O7 (REBCO) epitaxial films on SrTiO3 substrates, fabricated by RF magnetron sputter deposition and pulsed laser deposition (PLD), by scanning probe microscopy (SPM) and high resolution electron microscopy (HREM). The ramps were fabricated by Ar ion beam etching using masks of standard photoresist and TiN. AFM-studies on ramps in sputter deposited films show a strong dependence, i.e. formation of facets and ridges, on the angle of incidence of the ion beam with respect to the substrate surface as well as the rotation angle with respect to the crystal axes of the substrate. Ramps in pulsed laser deposited films did not show this dependence. Furthermore, we studied the effect of an anneal step prior to the deposition of barrier layers (i.e. PrBu2CU3O7, SrTiO3, CeO2) on the ramp. First results show a recrystallization of the ramp surface, resulting in terraces and a non-homogeneous growth of the barrier material on top of it. The thickness variations, for thin layers of barrier material, can even become much larger than expected from the amount of deposited material and are dependent on the deposition and anneal conditions. HREM studies show a well defined interface between barrier layer and electrodes. The angle of the ramp depends on the etch rate of the mask and REBCO, and on the angle of incidence of the ion beam. TiN has a much lower etch rate compared to photoresist, resulting in an angle of the ramp comparable to the angle of incidence, resulting in a low etching rate on the ramp. These results will lead to improved electrical characteristics of ramp-type junctions

    Using an inverse modelling approach to evaluate the water retention in a simple water harvesting technique

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    In arid and semi-arid zones, runoff harvesting techniques are often applied to increase the water retention and infiltration on steep slopes. Additionally, they act as an erosion control measure to reduce land degradation hazards. Nevertheless, few efforts were observed to quantify the water harvesting processes of these techniques and to evaluate their efficiency. In this study, a combination of detailed field measurements and modelling with the HYDRUS-2D software package was used to visualize the effect of an infiltration trench on the soil water content of a bare slope in northern Chile. Rainfall simulations were combined with high spatial and temporal resolution water content monitoring in order to construct a useful dataset for inverse modelling purposes. Initial estimates of model parameters were provided by detailed infiltration and soil water retention measurements. Four different measurement techniques were used to determine the saturated hydraulic conductivity (<I>K</I><sub>sat</sub>) independently. The tension infiltrometer measurements proved a good estimator of the <I>K</I><sub>sat</sub> value and a proxy for those measured under simulated rainfall, whereas the pressure and constant head well infiltrometer measurements showed larger variability. Six different parameter optimization functions were tested as a combination of soil-water content, water retention and cumulative infiltration data. Infiltration data alone proved insufficient to obtain high model accuracy, due to large scatter on the data set, and water content data were needed to obtain optimized effective parameter sets with small confidence intervals. Correlation between the observed soil water content and the simulated values was as high as <I>R</I><sup>2</sup>=0.93 for ten selected observation points used in the model calibration phase, with overall correlation for the 22 observation points equal to 0.85. The model results indicate that the infiltration trench has a significant effect on soil-water storage, especially at the base of the trench

    In-situ epitaxial growth of superconducting La-based bilayer cuprate thin films

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    We investigate the epitaxial growth of bilayer cuprate La2CaCu2O6+\delta using pure ozone as an oxidant, and find that even the crystal with parent composition without cation substitution can show metallic behavior with the aid of epitaxial strain effect. The hole concentration is controlled simply by excess-oxygen doping, and the films grown under the optimum conditions exhibit superconductivity below 30 K. This is the first result on the superconductivity of bilayer La2CaCu2O6+\delta induced purely by the excess oxygen.Comment: 5 pages, 3 figures, To appear in Phys. Rev. B, Rapid Communication

    Bipolaron Binding in Quantum Wires

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    A theory of bipolaron states in quantum wires with a parabolic potential well is developed applying the Feynman variational principle. The basic parameters of the bipolaron ground state (the binding energy, the number of phonons in the bipolaron cloud, the effective mass, and the bipolaron radius) are studied as a function of sizes of the potential well. Two cases are considered in detail: a cylindrical quantum wire and a planar quantum wire. Analytical expressions for the bipolaron parameters are obtained at large and small sizes of the quantum well. It is shown that at R≫1R\gg 1 [where RR means the radius (halfwidth) of a cylindrical (planar) quantum wire, expressed in Feynman units], the influence of confinement on the bipolaron binding energy is described by the function ∌1/R2\sim 1/R^{2} for both cases, while at small sizes this influence is different in each case. In quantum wires, the bipolaron binding energy W(R)W(R) increases logarithmically with decreasing radius. The shapes and the sizes of a nanostructure, which are favorable for observation of stable bipolaron states, are determined.Comment: 17 pages, 6 figures, E-mail addresses: [email protected]; [email protected]

    Characterisation of multilayer ramp-type REBa<sub>2</sub>Cu<sub>3</sub>O<sub>7−ή</sub> structures by SPM and HREM

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    We studied the morphology of ramps in REBa2Cu3O7 (REBCO) epitaxial films on SrTiO3 substrates, fabricated by RF magnetron sputter deposition and pulsed laser deposition (PLD), by scanning probe microscopy (SPM) and high resolution electron microscopy (HREM). The ramps were fabricated by Ar ion beam etching using masks of standard photoresist and TiN. AFM-studies on ramps in sputter deposited films show a strong dependence, i.e. formation of facets and ridges, on the angle of incidence of the ion beam with respect to the substrate surface as well as the rotation angle with respect to the crystal axes of the substrate. Ramps in pulsed laser deposited films did not show this dependence. Furthermore, we studied the effect of an anneal step prior to the deposition of barrier layers (i.e. PrBu2CU3O7, SrTiO3, CeO2) on the ramp. First results show a recrystallization of the ramp surface, resulting in terraces and a non-homogeneous growth of the barrier material on top of it. The thickness variations, for thin layers of barrier material, can even become much larger than expected from the amount of deposited material and are dependent on the deposition and anneal conditions. HREM studies show a well defined interface between barrier layer and electrodes. The angle of the ramp depends on the etch rate of the mask and REBCO, and on the angle of incidence of the ion beam. TiN has a much lower etch rate compared to photoresist, resulting in an angle of the ramp comparable to the angle of incidence, resulting in a low etching rate on the ramp. These results will lead to improved electrical characteristics of ramp-type junctions
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