Radiologists in the IT era: the Saitama experience

In recent years, intra-hospital computerisation including picture archiving and communication system (PACS) and electronic medical chart system (EMCS) has been rapidly introduced in Japan. The current system has, however, encountered many problems, such as, storage format of images, quality of diagnostic monitors, and compatibility of PACS and EMCS introduced by multi-vendors. In 2003, Saitama Medical University Hospital introduced PACS and EMCS, which can prevent inconsistency and loss of medical care information and can be linked to provide high quality medical care. This paper describes how radiologists should be involved in a hospital information system as specialists of PACS, based on our experience

New Power Module Integrating Output Current Measurement Function

This paper proposes a new power module concept that integrates output current measurement function to make inverters compact. The current measurement function is realized by tiny printed-circuit-board (PCB) Rogowski coils. The PCB Rogowski coil picks up a switching current flowing through an IGBT chip, and then a combination of a digital circuit based on a field-programmable-gate-array (FPGA) and an integrator circuit reproduces the output current of the inverter from the switching current. A major concern of the new power module is the effect of reverse recovery current of free-wheeling diodes because the reverse recovery current is superimposed on the switching current. This paper proposes a mitigating method of the reverse recovery current.2017 29th International Symposium on Power Semiconductor Devices and IC\u27s (ISPSD), May 28 2017-June 1 2017, Sapporo, Japa

Micro PCB Rogowski coil for current monitoring and protection of high voltage power modules

We have developed a printed circuit board Rogowski coil for monitoring of current and protection of high-voltage power modules and packages. It is small, thin, and inexpensive current sensor and is almost the ideal Rogowski coil because of its fishbone pattern. For noise reduction under high-voltage/-current conditions in a module, shield layers and coaxial connector are employed. In addition, a new, fast simulation tool was developed to optimize the main coil pattern for realization of arbitrary printed circuit board geometry in specific, limited spaces

16-channnel Micro Magnetic Flux Sensor Array for IGBT Current Distribution Measurement

Current crowding of IGBT and power diode in a chip or among chips is a barrier to the realization of highly-reliable power module and power electronics system. Current crowding occurs because of the parasitic inductance, difference of chip characteristics or temperature imbalance among chips. Although current crowding among IGBT or power diode chips has been analysed on numerical simulations, no sensor with sufficiently high special resolution and fast measurement time has yet been demonstrated. Therefore, the author developed and demonstrated 16-channel flat sensitivity sensor array for IGBT current distribution measurement. The sensor array consists of tiny-scale film sensors with analog amps and shield case against noise. The array and digital calibration method will be applied for reliability analysis, designing and screening of IGBT modules.ESREF 2015, 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 5-9, 2015, Centre de Congrès Pierre Baudis, Toulouse, Franc

High-throughput and Full Automatic DBC-Module Screening Tester for High Power IGBT

We developed a high-throughput screening tester for DBC-module of IGBT. The tester realizes a new screening test with current distribution in addition to a conventional switching test. It consists of a power circuit, a replaceable test head, sensor array module and digitizer with LabVIEW program. Therefore, all kinds of DBC-modules can be screened by switching the test head. The tester acquires magnetic field signals and displays GO/NOGO judgment automatically after digital calibration and signal processing in 10 seconds. It is expected to be applied for screening in a production line and analysis in order to prevent the failure of power modules.ESREF 2015, 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 5-9, 2015, Centre de Congrès Pierre Baudis, Toulouse, Franc

Clamp type built-in current sensor using PCB in high-voltage power modules

High reliability is required for power modules because they are increasingly demanded as key devices in an energy-saving society. However, commercially available current sensors like current transformers and Rogowski coils are still of large size. Therefore, it is impossible to measure the current in small parts. In addition, long wiring with large sensors reduces the performance of power modules. In previous studies, we proposed a current sensor of PCB Rogowski coil with a fishbone pattern. The sensor is sufficiently small and thin with high accuracy for power module application. The PCB current sensor can be used as a built-in current sensor in power modules from the viewpoint of size. However, the sensor requires further improvement to be attached to bonding wire from a usability perspective. We propose a new pattern for the clamp-type PCB sensor and fabricate the PCB sensor as a built-in sensor in a power module. With the new pattern, it is possible to move and widen the gap for clamping. The signal error is small even though the sensor is inclinedly attached to the bonding wire. The accuracy is confirmed by a comparison between the clamp-type PCB sensor in the module and a commercially available current sensor outside the module. The clamp-type PCB sensor can be applied for intelligent power modules as well as current measurement for power electronic converters

Short-Circuit Protection for an IGBT with Detecting the Gate Voltage and Gate Charge

This paper proposes a new short-circuit protection method for an IGBT. The proposed method is characterized by detecting not only gate charge but also gate voltage of the IGBT. This results in a shorter protection time, compared to the previous method that detects only the gate charge. A real-time monitoring system using an FPGA, A/D converters, and a D/A converter is used for the proposed protection method. Experimental results verify that the proposed method achieves a protection time of 390 ns, which is reduced by 68% compared to the previous method.ESREF 2014, 25th EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES,FAILURE PHYSICS AND ANALYSIS, Sep 29–Oct 3, 2014, Technische Universität Berli

Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications

The shoot-through phenomenon has not been fully discussed for high-power inverters with IGBTs. This is because a negative gate voltage is applied to IGBTs during off states. Recently, attention is paid to an improved gate driver with only a positive gate voltage in order to meet demands for simplification, integration, and reduction in power consumption as well as in cost of the gate driver. Moreover, the threshold voltage of the next-generation IGBT will decrease with microfabrication techniques of the gate structure. This will make the shoot-through phenomenon severer and degrade the inverter reliability with the next-generation IGBTs. The influence of the parasitic parameters in both the IGBT and circuit on the shoot-through mechanism has not been investigated so far.This paper clarifies the shoot-through mechanism and investigates the impact of the next generation IGBTs on the inverter reliability. The influence of the internal capacitance of IGBT including stray inductance on inverter reliability is experimentally confirmed

Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena

In this paper, we propose the criteria of bias voltage from parasitic capacitance and demonstrate the criteria in an experiment with the present IGBT. The bias voltage criteria are theoretically predicted for the new generation IGBT based on the scaling principle. For safe switching, the required gate voltage bias is predicted to be −1.2V or less for the present IGBTs and −6V or less is required to completely cancel the gate noise voltage. From the IGBT design, the bias voltage of scaling IGBT requires −2V to completely cancel the gate noise voltage

Shoot-through protection for an inverter consisting of the next-generation IGBTs with gate impedance reduction

Attention has been paid to the next-generation IGBT toward CMOS compatible wafer processes, which can be driven by a 5-V logic level due to its low threshold gate voltage. This low threshold voltage makes the so-called shoot-through fault severer. Even though the switching speed of the IGBT is intentionally reduced, the shoot-through fault can happen. This paper presents shoot-through protection for an inverter consisting of the next-generation IGBTs with gate impedance reduction. Theoretical analysis reveals the criterion of the gate impedance with taking parasitic parameters of the inverter into account