Grid tool integration within the eMinerals Project

In this article we describe the eMinerals mini grid, which is now running in production mode. Thisis an integration of both compute and data components, the former build upon Condor, PBS and thefunctionality of Globus v2, and the latter being based on the combined use of the Storage ResourceBroker and the CCLRC data portal. We describe how we have integrated the middleware components,and the different facilities provided to the users for submitting jobs within such an environment. We willalso describe additional functionality we found it necessary to provide ourselves

Aristolochic Acid I Induced Autophagy Extenuates Cell Apoptosis via ERK 1/2 Pathway in Renal Tubular Epithelial Cells

Autophagy is a lysosomal degradation pathway that is essential for cell survival and tissue homeostasis. However, limited information is available about autophagy in aristolochic acid (AA) nephropathy. In this study, we investigated the role of autophagy and related signaling pathway during progression of AAI-induced injury to renal tubular epithelial cells (NRK52E cells). The results showed that autophagy in NRK52E cells was detected as early as 3–6 hrs after low dose of AAI (10 µM) exposure as indicated by an up-regulated expression of LC3-II and Beclin 1 proteins. The appearance of AAI-induced punctated staining of autophagosome-associated LC3-II upon GFP-LC3 transfection in NRK52E cells provided further evidence for autophagy. However, cell apoptosis was not detected until 12 hrs after AAI treatment. Blockade of autophagy with Wortmannin or 3-Methyladenine (two inhibitors of phosphoinositede 3-kinases) or small-interfering RNA knockdown of Beclin 1 or Atg7 sensitized the tubular cells to apoptosis. Treatment of NRK52E cells with AAI caused a time-dependent increase in extracellular signal-regulated kinase 1 and 2 (ERK1/2) activity, but not c-Jun N-terminal kinase (JNK) and p38. Pharmacological inhibition of ERK1/2 phosphorylation with U0126 resulted in a decreased AAI-induced autophagy that was accompanied by an increased apoptosis. Taken together, our study demonstrated for the first time that autophagy occurred earlier than apoptosis during AAI-induced tubular epithelial cell injury. Autophagy induced by AAI via ERK1/2 pathway might attenuate apoptosis, which may provide a protective mechanism for cell survival under AAI-induced pathological condition

The role of RelA (p65) threonine 505 phosphorylation in the regulation of cell growth, survival, and migration

The NF-κB family of transcription factors is a well-established regulator of the immune and inflammatory responses and also plays a key role in other cellular processes, including cell death, proliferation, and migration. Conserved residues in the trans-activation domain of RelA, which can be posttranslationally modified, regulate divergent NF-κB functions in response to different cellular stimuli. Using rela(−/−) mouse embryonic fibroblasts reconstituted with RelA, we find that mutation of the threonine 505 (T505) phospho site to alanine has wide-ranging effects on NF-κB function. These include previously described effects on chemotherapeutic drug-induced apoptosis, as well as new roles for this modification in autophagy, cell proliferation, and migration. This last effect was associated with alterations in the actin cytoskeleton and expression of cellular migration–associated genes such as WAVE3 and α-actinin 4. We also define a new component of cisplatin-induced, RelA T505–dependent apoptosis, involving induction of NOXA gene expression, an effect explained at least in part through induction of the p53 homologue, p73. Therefore, in contrast to other RelA phosphorylation events, which positively regulate NF-κB function, we identified RelA T505 phosphorylation as a negative regulator of its ability to induce diverse cellular processes such as apoptosis, autophagy, proliferation, and migration

Mechanisms of Cisplatin Nephrotoxicity

Cisplatin is a widely used and highly effective cancer chemotherapeutic agent. One of the limiting side effects of cisplatin use is nephrotoxicity. Research over the past 10 years has uncovered many of the cellular mechanisms which underlie cisplatin-induced renal cell death. It has also become apparent that inflammation provoked by injury to renal epithelial cells serves to amplify kidney injury and dysfunction in vivo. This review summarizes recent advances in our understanding of cisplatin nephrotoxicity and discusses how these advances might lead to more effective prevention

Influence of boron nitride nanoparticles in the electrical and photoconduction characteristics of planar boron nitride-graphene oxide composite layer

A modified Iummer’s method is used to obtain a photoconducting material based on boron nitride (BN)– graphene oxide (GO) composite layer. The proposed silver/BN–GO/silver Schottky photodetector was fabricated using a drop-casting technique and electron beam evaporation. It was characterized using field emission scanning electron microscopy, energy dispersive X-ray spectroscopy, Raman spectroscopy, and Fourier-transform infrared spectroscopy. The confine element composition of boron, nitrogen, carbon, and oxygen showed excellent photoconduction toward laser wavelength of a50 nm and output power of 0.7 mW. The dark and illuminated current–voltage characteristics were used to determine the ideality factor and barrier height, which inevitably simplified the transport mechanism in the device. The reported ideality factor of 2.58 suggests the charge transport at the junction and formation of non-amorphous BN–GO composite layer. © 2019 by American Scientific Publishers All rights reserved

Enhancement of broadband ultraviolet visible photodetection by boron nitride nanoparticles in bulk graphene oxide layer

A proposed boron nitride/graphene oxide (BN/GO) composite photodetector (PD) was prepared using a drop cast method for photodetection in the ultraviolet (UV) and visible light ranges. Morphology of the GO, distribution of BN nanoparticles and composition of B, N, C and O elements were confirmed by field emission scanning electron microscope (FESEM) analysis and energy dispersive x-ray (EDX) spectroscopy results. Raman scattering indicates high frequency intrinsic E2g vibrations at 1349 cm−1 and low intense peaks at 803 cm−1 from hexagonal BN (h-BN) structures in the bulk GO layer, while an overlap in the D and G bands at 1349 and 1581 cm−1 respectively indicates the presence of the GO layer. Excellent photoconduction of 380 and 405 nm UV sources and a 650 nm red laser source showed that the measured photocurrent is dependent on power regardless of the signal wavelength. Variations in sensitivity allow the device to be operated at selected direct current (DC) bias voltages, while high frequency modulation at 1000 Hz showed a profound rise and fall time about 13.6 and 245.6 μs respectively. Characteristics as self-powered PD was observed, has an enhancement about 3450% at its zero bias voltage

Ultraviolet photoconduction in tungsten disulphide based Schottky heterostructure photodetector

A proposed Ag/WS2/SiO2/p-Si/Ag Schottky heterostructure photodetector is tested for its photoconduction behaviour under ultraviolet (UV) illumination using a light emitting diode (LED) at 380 nm. This is done at various illumination powers as well as different direct current (DC) bias voltages. A simple and feasible drop casting method and heating process allows good adhesion of tungsten disulphide (WS2) onto a silicon dioxide/p-silicon (SiO2/p-Si) substrate forming a Schottky contact. In order to enhance photoconduction, iron (Fe) powder is introduced to build contacts between WS2 and the substrate. Field emission scanning electron microscope (FESEM) analysis, energy dispersive x-ray (EDX) spectroscopy and x-ray diffraction (XRD) results confirm the formation of the WS2 thin film. Raman spectrum peaks at 357 cm−1 (E1 2g) and 417 cm−1 (A1g) confirm the presence of WS2 while peaks 214, 223, 274 and 292 cm−1 and a small broad shoulder at 694 cm−1 confirm the presence of iron (III) oxide (Fe2O3). Furthermore, profound D and G bands at 1370 and 1585 cm−1 respectively indicate defected carbon (C) structures in the WS2 thin film. Excellent photoconduction of UV LED 380 nm light source showed power and DC bias voltage dependent characteristics. Wide variations in rise and fall time justifies that the device can be operated at selected bias voltages and frequency modulations. © 201

Planar hybrid carbon-decorated zinc oxide nanowires for infrared photodetection

Vapor phase transport (VPT) assisted by thermal evaporation of methanol was utilized to favor the fabrication of hybrid carbon-decorated zinc oxide nanowires (C/ZnO NWs). The photoluminescence (PL) spectrum revealed evidence of optical properties for several defects such as zinc interstitials (Zni) and oxygen vacancy (Vo) in hybrid C/ZnO NWs. The PL also exhibited that the planar hybrid C/ZnO NWs photodetector has a wide range of sensitivity from ultraviolet (UV) to infrared (IR). The imaging results show formation of ZnO nanostructures which can be further confirmed from X-ray diffraction (XRD) results. XRD exhibits carbon (C)-related peaks at 12.88, 26, 43, 45, and 55° together with standard ZnO peaks. The incorporation of C shows excellent photoconduction towards varied laser powers (0.0, 7.82, 37.95, 69.20, 100.0, 130.0, and 160.0 mW) of IR illumination. The possibility of current drain in the device was evaluated based on the direct-current (DC) bias voltage of 0.00, 3.33, and 5.55 V. DC bias 3.33 and 5.55 V attributed increase of photocurrent towards the forward bias voltage. However, the reverse bias voltage illustrated a vast increase of photocurrent compared to the forward bias voltage. External quantum efficiency (EQE) at DC bias 5.55 V was 6.5–9.5 range folds greater than the EQE measured for zero bias voltage. Significant photoresponsivity was identical for various laser pulse ranging from 10 to 5000 Hz. Simultaneously, the rise (τr) and fall (τf) time were measured at 49 and 60.5 μs attributes that the fabrication technique can be improvised and implemented to enhance the efficiency of optoelectronic devices for future applications