Ultrafast response of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range

The ultrafast gain and refractive index dynamics of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range are investigated using a heterodyne pump probe technique. In the gain regime, ground state wavelengths exhibit full gain recovery in less than 10 ps up to 3 times transparency, attributed to enhanced carrier refilling via the injector layer. The effect of the injector can also been seen in unusual phase dynamics at excited state wavelengths at this injection level. (C) 2012 American Institute of Physics. (doi:10.1063/1.3686901

Quantum-Dash semiconductor laser characterization using continuous tuning optical swept source

Device characterization of Quantum-Dash semiconductor mode-locked laser using a continuous tuning swept source is presented. This technique is linear, simple and does not require any prior information about the signal under test

Coherent WDM transmission using quantum-dash mode-locked laser diodes as multi-wavelength source and local oscillator

Quantum-dash (QD) mode-locked laser diodes (MLLD) lend themselves as chip-scale frequency comb generators for highly scalable wavelength-division multiplexing (WDM) links in future data-center, campus-area, or metropolitan networks. Driven by a simple DC current, the devices generate flat broadband frequency combs, containing tens of equidistant optical tones with line spacings of tens of GHz. Here we show that QD-MLLDs can not only be used as multi-wavelength light sources at a WDM transmitter, but also as multi-wavelength local oscillators (LO) for parallel coherent reception. In our experiments, we demonstrate transmission of an aggregate data rate of 4.1 Tbit/s (23x45 GBd PDM-QPSK) over 75 km standard single-mode fiber (SSMF). To the best of our knowledge, this represents the first demonstration of a coherent WDM link that relies on QD-MLLD both at the transmitter and the receiver

Observation of soliton pulse compression in photonic crystal waveguides

We demonstrate soliton-effect pulse compression in mm-long photonic crystal waveguides resulting from strong anomalous dispersion and self-phase modulation. Compression from 3ps to 580fs, at low pulse energies(~10pJ), is measured via autocorrelation

Reflective amplified modulator operating at 40 Gbps up to 85°C as colorless transceiver for optical access networks

In this paper we report a 40 Gb/s operation of Remote Amplified Modulator at the temperature up to 85°C within the C- and L-band spectral ranges. The presented device was fabricated using an indium phosphide (InP) monolithic integration platform which relies on AlGaInAs quantum well active material, gap engineering by Selective Area Growth and low-parasitic RC semi-insulating buried heterostructures. We investigated the high temperature operation capabilities of the device as well as chirp and Rayleigh scattering effects in a bi-directional transmission. This 40 Gb/s remote amplified modulator could operate at fastest short sections of next-generation wavelength division multiplexing (WDM) optical access networks or in WDM routers as a part of a colorless transceiver

40 Gb/s colorless reflective amplified modulator

In this letter we demonstrate a colorless Reflective Amplified Modulator operating within the C- and L-band spectral ranges with the modulation data rate up to 40 Gb/s. We obtained a stable, open eye performance of the device at the temperature till 85ºC. The presented device was fabricated using an indium phosphide (InP) monolithic integration platform which relies on an AlGaInAs quantum well active material, gap engineering by selective area growth and low-parasitic RC semi-insulating buried heterostructures