Approaches and possible improvements in the area of multibody dynamics modeling

A wide ranging look is taken at issues involved in the dynamic modeling of complex, multibodied orbiting space systems. Capabilities and limitations of two major codes (DISCOS, TREETOPS) are assessed and possible extensions to the CONTOPS software are outlined. In addition, recommendations are made concerning the direction future development should take in order to achieve higher fidelity, more computationally efficient multibody software solutions

Room Temperature Electrical Detection of Spin Coherence in C60

An experimental demonstration of electrical detection of coherent spin motion of weakly coupled, localized electron spins in thin Fullerene C60 films at room temperature is presented. Pulsed electrically detected magnetic resonance experiments on vertical photocurrents through Al/C60/ZnO samples showed that an electron spin Rabi oscillation is reflected by transient current changes. The nature of possible microscopic mechanisms responsible for this spin to charge conversion as well as its implications for the readout of endohedral Fullerene (N@C60) spin qubits are discussed.Comment: 4 pages, 3 figure

CW and pulsed electrically detected magnetic resonance spectroscopy at 263 GHz/12 T on operating amorphous silicon solar cells

Here we describe a new high frequency/high field continuous wave and pulsed electrically detected magnetic resonance (CW EDMR and pEDMR) setup, operating at 263 GHz and resonance fields between 0 and 12 T. Spin dependent transport in illuminated hydrogenated amorphous silicon p-i-n solar cells at 5 K and 90 K was studied by in operando 263 GHz CW and pEDMR alongside with complementary X-band CW EDMR. Benefiting from the superior resolution at 263 GHz, we were able to better resolve EDMR signals originating from spin dependent hopping and recombination processes. 5 K EDMR spectra were found to be dominated by conduction and valence band tale states involved in spin dependent hopping, with additional contributions from triplet exciton states. 90 K EDMR spectra could be assigned to spin pair recombination involving conduction band tail states and dangling bonds as dominating spin dependent transport process, with additional contributions from valence band tail and triplet exciton states.Comment: 8 pages, 4 figure

Transport and recombination through weakly coupled localized spin pairs in semiconductors during coherent spin excitation

Semi-analytical predictions for the transients of spin-dependent transport and recombination rates through localized states in semiconductors during coherent electron spin excitation are made for the case of weakly spin-coupled charge carrier ensembles. The results show that the on-resonant Rabi frequency of electrically or optically detected spin-oscillation doubles abruptly as the strength of the resonant microwave field gamma B_1 exceeds the Larmor frequency separation within the pair of charge carrier states between which the transport or recombination transition takes place. For the case of a Larmor frequency separation of the order of gamma B_1 and arbitrary excitation frequencies, the charge carrier pairs exhibit four different nutation frequencies. From the calculations, a simple set of equations for the prediction of these frequencies is derived

Investigations on nucleophilic layers made with a novel plasma jet technique

In this work a novel plasma jet technique is used for the deposition of nucleophilic films based on (3-aminopropyl)trimethoxysilane at atmospheric pressure. Film deposition was varied with regard to duty cycles and working distance. Spectral ellipsometry and chemical derivatization with 4-(trifluoromethyl)benzaldehyde using ATR- FTIR spectroscopy measurements were used to characterize the films. It was found that the layer thickness and the film composition are mainly influenced by the duty cycle

Investigation of hopping transport in n a Si H c Si solar cells with pulsed electrically detected magnetic resonance

Hopping transport through heterostructure solar cells based on B doped crystalline silicon wafers with highly P doped hydrogenated amorphous silicon emitters with different thicknesses is investigated at T 10 K with pulsed electrically detected magnetic resonance. The measurements show that transport is dominated by conduction band tail states g amp; 8776; 2.0046 with a distribution of their mutual coupling strength. The signal intensity correlates to the sample thickness and the g factors do not exhibit an anisotropy which suggests that transport is still dominated by bulk properties of amorphous silicon. In addition, two broad Pdonor hyperfine satellites can be detected. Influences of interface defects such as Pb like states known from silicon dioxide interfaces are either suppressed by the high Fermi energy at the interface or not presen

The ultra-sensitive electrical detection of spin Rabi oscillation at paramagnetic defects

A short review of the pulsed electrically detected magnetic resonance (pEDMR) experiment is presented. PEDMR allows the highly sensitive observation of coherent electron spin motion of charge carriers and defects in semiconductors by means of transient current measurements. The theoretical foundations, the experimental implementation, its sensitivity and its potential with regard to the investigation of electronic transitions in semiconductors are discussed. For the example of the P_b center at the crystalline silicon (111) to silicon dioxide interface it is shown experimentally how one can detect spin Rabi-oscillation, its dephasing, coherence decays and spin-coupling effects.Comment: The manuscript has been submitted for journal publicatio

Using rapid scan EPR to improve the detection limit of quantitative EPR by more than one order of magnitude

X band rapid scan EPR was implemented on a commercially available Bruker ELEXSYS E580 spectrometer. Room temperature rapid scan and continuous wave EPR spectra were recorded for amorphous silicon powder samples. By comparing the resulting signal intensities the feasibility of performing quantitative rapid scan EPR is demonstrated. For different hydrogenated amorphous silicon samples, rapid scan EPR results in signal to noise improvements by factors between 10 and 50. Rapid scan EPR is thus capable of improving the detection limit of quantitative EPR by at least one order of magnitude. In addition, we provide a recipe for setting up and calibrating a conventional pulsed and continuous wave EPR spectrometer for rapid scan EP