Thermal stability and diffusion in gadolinium silicate gate dielectric films

Gadolinium silicate films on Si(100) annealed in oxygen and vacuum at temperatures up to 800\u200a\ub0C were analyzed by Rutherford backscattering and narrow resonance nuclear profiling. Oxygen diffused into the film eliminating oxygen vacancies, but Si diffusion, previously observed in Al and Y oxides and in La and Zr silicate films, was absent. Higher-temperature annealing in oxygen resulted in the formation of an interfacial layer observable in high-resolution electron micrographs. Gd0.23Si0.14O0.63 films crystallize at temperatures between 1000 and 1050\u200a\ub0C. These observations combined with recent electrical measurements show that gadolinium silicate films may be a good candidate for the replacement of SiO2 in deep submicron metal\u2013oxide\u2013semiconductor gates.NRC publication: Ye

Ultrathin zirconium silicate films deposited on Si(100) using Zr(Oi-Pr)2(thd)2, Si(Ot-Bu)2(thd)2 and nitric oxide

Ultrathin Zr silicate films were deposited using Zr(Oi\uadPr)2(tetramethylheptanedione,thd)2, Si(Ot\uadBu)2(thd)2 and nitric oxide in a pulse-mode metallorganic chemical-vapor deposition apparatus with a liquid injection source. High resolution transmission electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), and medium energy ion scattering were employed to investigate the structure, surface roughness, chemical state, and composition of the films. The nitric oxide used as oxidizing gas, instead of O2, not only reduced the thickness of the interfacial layer but also removed the carbon contamination effectively from the bulk of the films. The as-deposited Zr silicate films with a Si:Zr ratio of 1.3:1 were amorphous, with an amorphous interfacial layer 0.3-0.6 nm thick. After a spike anneal in oxygen and a 60 s nitrogen anneal at 850\ub0C, these films remained amorphous throughout without phase separation, but the interfacial layer increased in thickness. No evidence of Zr\uadC and Zr\uadSi bonds were found in the films by XPS and carbon concentrations <0.1\u2009atom%, the detection limit, were obtained. The hysteresis, fixed charge density, and leakage current determined from capacitance-voltage analysis improved significantly after postdeposition anneals at 850\ub0C and the films exhibited promising characteristics for deep submicrometer metal-oxide-semiconductor devices.NRC publication: Ye

Crystallographic reconstruction study of the effects of finish rolling temperature on the variant selection during bainite transformation in C-Mn high-strength steels

The effect of finish rolling temperature (FRT) on the austenite- () to-bainite () phase transformation is quantitatively investigated in high-strength C-Mn steels. In particular, the present study aims to clarify the respective contributions of the conditioning during the hot rolling and the variant selection (VS) during the phase transformation to the inherited texture. To this end, an alternative crystallographic reconstruction procedure, which can be directly applied to experimental electron backscatter diffraction (EBSD) mappings, is developed by combining the best features of the existing models: the orientation relationship (OR) refinement, the local pixel-by-pixel analysis and the nuclei identification and spreading strategy. The applicability of this method is demonstrated on both quenching and partitioning (Q&P) and as-quenched lath-martensite steels. The results obtained on the C-Mn steels confirm that the sample finish rolled at the lowest temperature (829{\deg}C) exhibits the sharpest transformation texture. It is shown that this sharp texture is exclusively due to a strong VS from parent brass {110}, S {213} and Goss {110} grains, whereas the VS from the copper {112} grains is insensitive to the FRT. In addition, a statistical VS analysis proves that the habit planes of the selected variants do not systematically correspond to the predicted active slip planes using the Taylor model. In contrast, a correlation between the Bain group to which the selected variants belong and the FRT is clearly revealed, regardless of the parent orientation. These results are discussed in terms of polygranular accommodation mechanisms, especially in view of the observed development in the hot-rolled samples of high-angle grain boundaries with misorientation axes between and

Across‐vendor standardization of semi‐LASER for single‐voxel MRS at 3T

The semi‐adiabatic localization by adiabatic selective refocusing (sLASER) sequence provides single‐shot full intensity signal with clean localization and minimal chemical shift displacement error and was recommended by the international MRS Consensus Group as the preferred localization sequence at high‐ and ultra‐high fields. Across‐vendor standardization of the sLASER sequence at 3 tesla has been challenging due to the B1 requirements of the adiabatic inversion pulses and maximum B1 limitations on some platforms. The aims of this study were to design a short‐echo sLASER sequence that can be executed within a B1 limit of 15 μT by taking advantage of gradient‐modulated RF pulses, to implement it on three major platforms and to evaluate the between‐vendor reproducibility of its perfomance with phantoms and in vivo. In addition, voxel‐based first and second order B0 shimming and voxel‐based B1 adjustments of RF pulses were implemented on all platforms. Amongst the gradient‐modulated pulses considered (GOIA, FOCI and BASSI), GOIA‐WURST was identified as the optimal refocusing pulse that provides good voxel selection within a maximum B1 of 15 μT based on localization efficiency, contamination error and ripple artifacts of the inversion profile. An sLASER sequence (30 ms echo time) that incorporates VAPOR water suppression and 3D outer volume suppression was implemented with identical parameters (RF pulse type and duration, spoiler gradients and inter‐pulse delays) on GE, Philips and Siemens and generated identical spectra on the GE ‘Braino’ phantom between vendors. High‐quality spectra were consistently obtained in multiple regions (cerebellar white matter, hippocampus, pons, posterior cingulate cortex and putamen) in the human brain across vendors (5 subjects scanned per vendor per region; mean signal‐to‐noise ratio [less than] 33; mean water linewidth between 6.5 Hz to 11.4 Hz). The harmonized sLASER protocol is expected to produce high reproducibility of MRS across sites thereby allowing large multi‐site studies with clinical cohorts

Frequency drift in MR spectroscopy at 3T

Purpose: Heating of gradient coils and passive shim components is a common cause of instability in the B-0 field, especially when gradient intensive sequences are used. The aim of the study was to set a benchmark for typical drift encountered during MR spectroscopy (MRS) to assess the need for real-time field-frequency locking on MRI scanners by comparing field drift data from a large number of sites.Method: A standardized protocol was developed for 80 participating sites using 99 3T MR scanners from 3 major vendors. Phantom water signals were acquired before and after an EPI sequence. The protocol consisted of: minimal preparatory imaging; a short pre-fMRI PRESS; a ten-minute fMRI acquisition; and a long post-fMRI PRESS acquisition. Both pre- and post-fMRI PRESS were non-water suppressed. Real-time frequency stabilization/adjustment was switched off when appropriate. Sixty scanners repeated the protocol for a second dataset. In addition, a three-hour post-fMRI MRS acquisition was performed at one site to observe change of gradient temperature and drift rate. Spectral analysis was performed using MATLAB. Frequency drift in pre-fMRI PRESS data were compared with the first 5:20 minutes and the full 30:00 minutes of data after fMRI. Median (interquartile range) drifts were measured and showed in violin plot. Paired t-tests were performed to compare frequency drift pre- and post-fMRI. A simulated in vivo spectrum was generated using FID-A to visualize the effect of the observed frequency drifts. The simulated spectrum was convolved with the frequency trace for the most extreme cases. Impacts of frequency drifts on NAA and GABA were also simulated as a function of linear drift. Data from the repeated protocol were compared with the corresponding first dataset using Pearson's and intraclass correlation coefficients (ICC).Results: Of the data collected from 99 scanners, 4 were excluded due to various reasons. Thus, data from 95 scanners were ultimately analyzed. For the first 5:20 min (64 transients), median (interquartile range) drift was 0.44 (1.29) Hz before fMRI and 0.83 (1.29) Hz after. This increased to 3.15 (4.02) Hz for the full 30 min (360 transients) run. Average drift rates were 0.29 Hz/min before fMRI and 0.43 Hz/min after. Paired t-tests indicated that drift increased after fMRI, as expected (p &lt; 0.05). Simulated spectra convolved with the frequency drift showed that the intensity of the NAA singlet was reduced by up to 26%, 44 % and 18% for GE, Philips and Siemens scanners after fMRI, respectively. ICCs indicated good agreement between datasets acquired on separate days. The single site long acquisition showed drift rate was reduced to 0.03 Hz/min approximately three hours after fMRI.Discussion: This study analyzed frequency drift data from 95 3T MRI scanners. Median levels of drift were relatively low (5-min average under 1 Hz), but the most extreme cases suffered from higher levels of drift. The extent of drift varied across scanners which both linear and nonlinear drifts were observed.</p