82 research outputs found

    The Role of Space Experiments in the Radiation Qualification of Electronic and Photonic Devices and Systems

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    Space experiments are occasionally launched to study the effects of radiation on electronic and photonic devices. This begs the following questions: Are space experiments necessary? Do the costs justify the benefits? How does one judge success of space experiment? What have we learned from past space experiments? How does one design a space experiment? This viewgraph presentation provides information on the usefulness of space and ground tests for simulating radiation damage to spacecraft components

    Effects of Bias, Electrical and Thermal Stress on DDR2 Total Ionizing Dose Response

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    We investigate whether bias conditions arid electrical and thermal stresses can affect the Total Ionizing Dose response ofDDR2 SDRAM

    Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory

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    We have compared the data retention of irradiated commercial NAND flash memories with that of unirradiated controls. Under some circumstanc es, radiation exposure has a significant effect on the retention of f lash memories

    Incorporating Probability Models of Complex Test Structures to Perform Technology Independent FPGA Single Event Upset Analysis

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    We present SEU test and analysis of the Microsemi ProASIC3 FPGA. SEU Probability models are incorporated for device evaluation. Included is a comparison to the RTAXS FPGA illustrating the effectiveness of the overall testing methodology

    Enhancing Observability of Signal Composition and Error Signatures During Dynamic SEE Analog to Digital Device Testing

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    A novel approach to dynamic SEE ADC testing is presented. The benefits of this test scheme versus prior implemented techniques include the ability to observe ADC SEE errors that are in the form of phase shifts, single bit upsets, bursts of disrupted signal composition, and device clock loss

    Effectiveness of Internal vs. External SEU Scrubbing Mitigation Strategies in a Xilinx FPGA: Design, Test, and Analysis

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    We compare two scrubbing mitigation schemes for Xilinx FPGA devices. The design of the scrubbers is briefly discussed along with an examination of mitigation limitations. Proton and Heavy Ion data are then presented and analyzed

    Use of Commercial FPGA-Based Evaluation Boards for Single-Event Testing of DDR2 and DDR3 SDRAMs

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    We investigate the use of commercial FPGA based evaluation boards for radiation testing DDR2 and DDR3 SDRAMs. We evaluate the resulting data quality and the tradeoffs involved in the use of these boards

    Radiation-aware Design for Cubesat Form-Factor Experiment Using Goal Structuring Notation

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    A Goal Structuring Notation (GSN) model is presented to argue for the radiation reliability of a SEU SCRAM experiment in a CubeSat form-factor for a 1 year old polar LEO mission

    How Long Can the Hubble Space Telescope Operate Reliably? A Total Dose Perspective

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    The Hubble Space Telescope has been at the forefront of discoveries in the field of astronomy for more than 20 years. It was the first telescope designed to be serviced in space and the last such servicing mission occurred in May 2009. The question of how much longer this valuable resource can continue to return science data remains. In this paper a detailed analysis of the total dose exposure of electronic parts at the box level is performed using solid angle sectoring/3-dimensional ray trace and Monte Carlo radiation transport simulations. Results are related to parts that have been proposed as possible total dose concerns. The spacecraft subsystem that appears to be at the greatest risk for total dose failure is identified. This is discussed with perspective on the overall lifetime of the spacecraft

    TID and SEE Response of an Advanced Samsung 4G NAND Flash Memory

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    Initial total ionizing dose (TID) and single event heavy ion test results are presented for an unhardened commercial flash memory, fabricated with 63 nm technology. Results are that the parts survive to a TID of nearly 200 krad (SiO2), with a tractable soft error rate of about 10(exp -l2) errors/bit-day, for the Adams Ten Percent Worst Case Environment
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