The evaluation of agreement between high-frequency ultrasonography and research diagnostic criteria for the diagnosis of temporomandibular joint internal derangements.

Objective: The aim of this study is to compare the diagnosis of patients with temporomandibular joint (TMJ)internal derangements which had been diagnosed using Research Diagnostic Criteria/TemporomandibularDisorders (RDC/TMD) with the dynamic high‑resolution sonography findings.Materials and Methods: Axis I section of RDC/TMD form had been applied to participants. Participants weredivided into three groups as healthy TMJ, disc displacement with reduction, and disc displacement withoutreduction. The diagnoses had been compared with the dynamic high‑resolution sonography findings. Twelveof the patients had been treated with laser therapy, whereas 13 patients were treated with stabilizationsplint. Seventeen patients were treated with anterior repositioning splint (n = 42). After the application ofdifferent treatment modalities, the position of the articular disc had been determined with Axis I of RDC/TMD form and dynamic high‑resolution sonography. The findings were compared and statistically analyzed.Results: For the right TMJ, pretreatment and posttreatment ultrasonography (USG) diagnoses and RDC/TMD clinical diagnoses were found similar (κ = 0.125–0.008). No statistically significant relationshipwas found (P &gt; 0.05). For the left TMJ, pretreatment USG diagnosis and RDC/TMD clinical diagnose werefound similar (κ = 0.070). No statistically significant relationship was found (P &gt; 0.05). For the left TMJ,posttreatment USG diagnosis and RDC/TMD clinical diagnose were compared. A statistically significantdifference was found (κ = 0.256). A statistically significant relationship was found (P &lt; 0.05).Conclusion: Axis‑1 of RDC/TMD form which is used for the diagnosis of internal derangements and dynamichigh‑resolution sonography was not found in the agreement.Keywords: Disk displacement, dynamic high‑resolution sonography, temporomandibular joint&nbsp;</p

GROWTH TEMPERATURE EFFECTS ON SURFACE MORPHOLOGY OF EPITAXIAL GAAS LAYERS GROWN BY MOCVD

Heteroepitaxial growths of GaAs layers on Ge substrates have received a significant attentiondue to their closely matched lattice constants and thermal expansion coefficients. This study isfirst part of InxGa1-xP/InyGa1-yAs/Ge high efficiency tandem solar cell project which issupported by TÜBİTAK. In this study epitaxial GaAs thin films grown by MetalorganicChemical Vapor Deposition (MOCVD) on Ge [100] substrates with a 60 off orientationtowards the nearest [111] direction. Root mean square roughness (rms) and surfacemorphology of epitaxial GaAs layers were investigated by contact-mode Park System XE-100Atomic force microscopy (AFM). Also growth temperature effect on surface morphology ofGaAs layers was investigated.</p