Antiinflammatory Therapy with Canakinumab for Atherosclerotic Disease

Background: Experimental and clinical data suggest that reducing inflammation without affecting lipid levels may reduce the risk of cardiovascular disease. Yet, the inflammatory hypothesis of atherothrombosis has remained unproved. Methods: We conducted a randomized, double-blind trial of canakinumab, a therapeutic monoclonal antibody targeting interleukin-1β, involving 10,061 patients with previous myocardial infarction and a high-sensitivity C-reactive protein level of 2 mg or more per liter. The trial compared three doses of canakinumab (50 mg, 150 mg, and 300 mg, administered subcutaneously every 3 months) with placebo. The primary efficacy end point was nonfatal myocardial infarction, nonfatal stroke, or cardiovascular death. RESULTS: At 48 months, the median reduction from baseline in the high-sensitivity C-reactive protein level was 26 percentage points greater in the group that received the 50-mg dose of canakinumab, 37 percentage points greater in the 150-mg group, and 41 percentage points greater in the 300-mg group than in the placebo group. Canakinumab did not reduce lipid levels from baseline. At a median follow-up of 3.7 years, the incidence rate for the primary end point was 4.50 events per 100 person-years in the placebo group, 4.11 events per 100 person-years in the 50-mg group, 3.86 events per 100 person-years in the 150-mg group, and 3.90 events per 100 person-years in the 300-mg group. The hazard ratios as compared with placebo were as follows: in the 50-mg group, 0.93 (95% confidence interval [CI], 0.80 to 1.07; P = 0.30); in the 150-mg group, 0.85 (95% CI, 0.74 to 0.98; P = 0.021); and in the 300-mg group, 0.86 (95% CI, 0.75 to 0.99; P = 0.031). The 150-mg dose, but not the other doses, met the prespecified multiplicity-adjusted threshold for statistical significance for the primary end point and the secondary end point that additionally included hospitalization for unstable angina that led to urgent revascularization (hazard ratio vs. placebo, 0.83; 95% CI, 0.73 to 0.95; P = 0.005). Canakinumab was associated with a higher incidence of fatal infection than was placebo. There was no significant difference in all-cause mortality (hazard ratio for all canakinumab doses vs. placebo, 0.94; 95% CI, 0.83 to 1.06; P = 0.31). Conclusions: Antiinflammatory therapy targeting the interleukin-1β innate immunity pathway with canakinumab at a dose of 150 mg every 3 months led to a significantly lower rate of recurrent cardiovascular events than placebo, independent of lipid-level lowering. (Funded by Novartis; CANTOS ClinicalTrials.gov number, NCT01327846.

Preparation of wide gap Cu In,Ga S2 films on ZnO coated substrates

We have prepared Cu In,Ga S2 films at growth temperatures from 300 C to 580 C with a homogeneous gallium depth distribution estimated band gap 1.67 eV onto soda lime glass SLG substrates with one of three different kinds of back contact Mo 1000 nm , ZnO 500 nm , and Mo 30 nm ZnO 500 nm , respectively. We have also investigated the depth profiles of Zn and Na diffused from SLG in Cu In,Ga S2 films by secondary ion mass spectroscopy SIMS . The efficiency of solar cells on Mo increases with increasing growth temperature. It is higher on Mo ZnO than on ZnO, and increases from 350 C to 450 C, then decreases above 450 C. It was observed by SIMS that the amount of Zn in Cu In,Ga S2 on Mo ZnO is lower than it is on ZnO up to 450 C, and a large amount of Zn diffuses into absorbers over 450 C, which contributes to decreasing efficiency. The amount of Na in the back contact increases with growth temperature. The depth distribution of Na in Cu In,Ga S2 films on Mo is almost constant in the order of 1017 1018 cm amp; 8722; 3, on ZnO and Mo ZnO the Na concentration increases towards the surface and is in the range of 1015 1017 cm amp; 8722;

In and Ga diffusion of Cu In, Ga Se2 and Cu In, Ga S2 films instantaneously prepared in a non vacuum process

When Cu In,Ga S,Se 2 is prepared by heating metal precursor films in chalcogen atmosphere sequential process the resulting films typically show a gradient in the Ga In Ga ratio over the depth of the film. This is generally observed for reaction periods ranging from a few minutes rapid thermal processing to several hours. In this work we have investigated the Ga distribution in films where the reaction period was reduced to one second. As previously reported, such instantaneous synthesis can be achieved by spraying elemental Cu, In, S, Se particles onto a Mo foil, and then using a spot welding machine to pass very high currents through the Mo foil. In this work, the metal precursors were evaporated onto the Mo foil, and chalcogen particles were sprayed ontop. The Ga distribution is derived from secondary ion mass spectroscopy SIMS and x ray diffraction XRD . We report on the influence of parameters such as the electrical power applied, the presence of Cu excess, and the type of chalcogen selenium or sulphu

Effects of Na on the properties of Cu In,Ga S2 solar cells

We have prepared Cu In,Ga S2 solar cells with changing Na concentration using several preparation methods. We have investigated the hole density and solar cell properties. The hole density increases with increasing Na concentration up to 10 17 cm amp; 8722;3, and stays almost constant for higher concentrations. It can be considered that Na might passivate a single type of donor up to 1017 cm amp; 8722;3. For all preparation methods, the efficiencies of solar cells prepared with the Cu In,Ga S2 thin films increase with increasing Na concentration. We propose a Na diffusion model derived from depth profiles obtained for each of the preparation method

Tandem solar cells with Cu In,Ga S2 top cells on ZnO coated substrates

We have prepared transparent top cells for stacked tandems with wide gap Cu In,Ga S2 absorbers on ZnO Al soda lime glass SLG and Mo ZnO Al SLG substrates. Their overall transmission increases with the absorber band gap. The band gaps were 1.63, 1.72, and 1.79 eV. We investigated the properties of mechanically stacked tandem solar cells using these top cells and a CuInSe2 bottom cell. The short circuit current density of the tandem cells is typically limited by that of the bottom cell illuminated through the top cells. Our best tandem efficiency was estimated to be 4.4 with an open circuit voltage of 1.08 V

Cu In,Ga S2 films prepared by two stage evaporation on ZnO coated substrates

We have prepared Cu In,Ga S2 films with an almost homogeneous Ga depth distribution using the two stage sequential multi source evaporation process on soda lime glass SLG substrates with one of three different kinds of back contact Mo 1000nm , ZnO 500nm , and Mo 30nm ZnO 500nm , respectively. We have investigated the depth profiles of Zn and Na diffused from SLG in Cu In,Ga S2 films by secondary ion mass spectroscopy SIMS and compare them to those in films prepared by co evaporation . The efficiencies are higher on Mo ZnO than they are on ZnO. It was observed by SIMS that the amount of Zn in Cu In,Ga S2 on Mo ZnO is lower than it is in Cu In,Ga S2 on ZnO. The obtained efficiencies are generally higher with two stage evaporation than with co evaporation. The Na concentration in Cu In,Ga S2 prepared by two stage evaporation is two orders of magnitude higher than in co evaporated films