Indonesia Beyond \u3cem\u3eReformasi\u3c/em\u3e: \u3cem\u3eNecessity\u3c/em\u3e and the “De-centering” of Democracy

We argue that Indonesia’s path to democracy was borne out of necessity brought about by a state of extreme precariousness and then molded by its lack thereof. Its lack thereof precisely reflected the internal power struggle and elite competition between remnant groups of the New Order vying under a different set of circumstances. Notwithstanding the given peculiarities of Indonesia’s transition, the current state of democracy in Indonesia is clearly one that is also shaped by the patrimonial character of the New Order. While imminent necessity acts as a temporary stop to ensure that these predatory tendencies of Indonesia’s political system do not come to the fore, its dissolution subsequently opened up the avenues for them to remerge. For even necessity has its limitations and these limitations lie in its eventual demise. Such a pattern inevitably contributed to perceptions of Indonesia’s reform process as being perceived as a vacillating “two steps forward, one step back.” The study can thus be chronologically divided into two parts. The first part mainly features the predominantly necessity-based reforms presented within administrations of the early reform period including the short-lived presidencies of Habibie, Abdurrahman Wahid and Megawati. The second part features the non-necessity-based reforms that constitute the “democratic consolidation” phase of the Yudhoyono presidency and beyond. This study highlights and evaluates both the specific “steps forward” (necessity present) as well as the contentious “steps back” (necessity absent) Indonesia has taken so far in its reformasi journey in an attempt to redefine the new polity. We conclude that post-reformasi Indonesia has increasingly tended toward a “decentered democracy.

Stereoelectronic effects on the binding of neutral Lewis bases to CdSe nanocrystals

Using P-31 nuclear magnetic resonance (NMR) spectroscopy, we monitor the competition between tri-nbutylphosphine (Bu3P) and various amine and phosphine ligands for the surface of chloride terminated CdSe nanocrystals. Distinct P-31 NMR signals for free and bound phosphine ligands allow the surface ligand coverage to be measured in phosphine solution. Ligands with a small steric profile achieve higher surface coverages (Bu3P = 0.5 nm(-2), Me2P-n-octyl = 2.0 nm(-2), NH2Bu = >3 nm(-2)) and have greater relative binding affinity for the nanocrystal (binding affinity: Me3P > Me2P -n-octyl similar to Me2P -n-octadecyl > Et3P > Bu3P). Among phosphines, only Bu 3 P and Me2P-n-octyl support a colloidal dispersion, allowing a relative surface binding affinity (K-rel) to be estimated in that case (K-rel = 3.1). The affinity of the amine ligands is measured by the extent to which they displace Bu3P from the nanocrystals (K-rel: H2NBu similar to N-n-butylimidazole > 4-ethylpyridine > Bu3P similar to HNBu2 > Me2NBu > Bu3N). The affinity for the CdSe surface is greatest among soft, basic donors and depends on the number of each ligand that bind. Sterically unencumbered ligands such as imidazole, pyridine, and n-alkylamines can therefore outcompete stronger donors such as alkylphosphines. The influence of repulsive interactions between ligands on the binding affinity is a consequence of the high atom density of binary semiconductor surfaces. The observed behavior is distinct from the self-assembly of straight-chain surfactants on gold and silver where the ligands are commensurate with the underlying lattice and attractive interactions between aliphatic chains strengthen the binding

Combined SIRT3 and SIRT5 deletion is associated with inner retinal dysfunction in a mouse model of type 1 diabetes

Abstract Diabetic retinopathy (DR) is a major cause of blindness in working adults in the industrialized world. In addition to vision loss caused by macular edema and pathological angiogenesis, DR patients often exhibit neuronal dysfunction on electrophysiological testing, suggesting that there may be an independent neuronal phase of disease that precedes vascular disease. Given the tremendous metabolic requirements of the retina and photoreceptors in particular, we hypothesized that derangements in metabolic regulation may accelerate retinal dysfunction in diabetes. As such, we induced hyperglycemia with streptozotocin in mice with monoallelic Nampt deletion from rod photoreceptors, mice lacking SIRT3, and mice lacking SIRT5 and tested multiple components of retinal function with electroretinography. None of these mice exhibited accelerated retinal dysfunction after induction of hyperglycemia, consistent with normal-appearing retinal morphology in hyperglycemic Sirt3 −/− or Sirt5 −/− mice. However, mice lacking both SIRT3 and SIRT5 (Sirt3 −/− Sirt5 −/− mice) exhibited significant evidence of inner retinal dysfunction after induction of hyperglycemia compared to hyperglycemic littermate controls, although this dysfunction was not accompanied by gross morphological changes in the retina. These results suggest that SIRT3 and SIRT5 may be involved in regulating neuronal dysfunction in DR and provide a foundation for future studies investigating sirtuin-based therapies

Large area growth and electrical properties of p-type WSe2 atomic layers.

Transition metal dichacogenides represent a unique class of two-dimensional layered materials that can be exfoliated into single or few atomic layers. Tungsten diselenide (WSe(2)) is one typical example with p-type semiconductor characteristics. Bulk WSe(2) has an indirect band gap (∼ 1.2 eV), which transits into a direct band gap (∼ 1.65 eV) in monolayers. Monolayer WSe(2), therefore, is of considerable interest as a new electronic material for functional electronics and optoelectronics. However, the controllable synthesis of large-area WSe(2) atomic layers remains a challenge. The studies on WSe(2) are largely limited by relatively small lateral size of exfoliated flakes and poor yield, which has significantly restricted the large-scale applications of the WSe(2) atomic layers. Here, we report a systematic study of chemical vapor deposition approach for large area growth of atomically thin WSe(2) film with the lateral dimensions up to ∼ 1 cm(2). Microphotoluminescence mapping indicates distinct layer dependent efficiency. The monolayer area exhibits much stronger light emission than bilayer or multilayers, consistent with the expected transition to direct band gap in the monolayer limit. The transmission electron microscopy studies demonstrate excellent crystalline quality of the atomically thin WSe(2). Electrical transport studies further show that the p-type WSe(2) field-effect transistors exhibit excellent electronic characteristics with effective hole carrier mobility up to 100 cm(2) V(-1) s(-1) for monolayer and up to 350 cm(2) V(-1) s(-1) for few-layer materials at room temperature, comparable or well above that of previously reported mobility values for the synthetic WSe(2) and comparable to the best exfoliated materials