TUNING THE EFFECTIVE ELECTRON CORRELATION IN IRIDATE SYSTEMS FEATURING STRONG SPIN-ORBIT INTERACTION

The 5d transition metal oxides have drawn substantial interest for predictions of being suitable candidates for hosting exotic electronic and magnetic states, including unconventional superconductors, magnetic skyrmions, topological insulators, and Weyl semimetals. In addition to the electron-electron correlation notable in high-temperature 3d transition metal superconductors, the 5d oxides contain a large spin-orbit interaction term in their ground state, which is largely responsible for the intricate phase diagram of these materials. Iridates, or compounds containing 5d iridium bonded with oxygen, are of particular interest for their spin-orbit split Jeff = 1/2 state, which is partially filled without the presence of any additional electron correlation. However, the comparable energetics between a small, finite electron correlation energy and the spin-orbit interaction make the band structure of iridates amenable to small perturbations of the crystalline lattice and ideal for exploring the interplay between these two interactions. While altering the spin-orbit interaction strength of iridium is tenably not feasible, the electron correlation energy can be tuned using a variety of experimental techniques. In this dissertation, the electronic and magnetic properties of iridates at various electron correlation energies are studied by altering the epitaxial lattice strain, dimensionality, and the radius size of the A-site cation. These parameters tune the effective electronic bandwidth of the system, which is inversely proportional to the effective electron correlation energy. The lattice strain and the cationic radius size achieve this by altering the Ir-O-Ir bond angle between nearest neighbor Ir ions. In the case of dimensionality tuning, the effective bandwidth is controlled via the coordination number of each Ir ion. In the first study, a metal-to-insulator transition is observed in thin films of the semi-metallic SrIrO3 as in-plane compressive lattice strain is increased. This observation is consistent with the expectation of compressive lattice strain increasing the effective correlation energy; however, optical spectroscopy spectra reveal the increase is not sufficient for opening an insulating Mott gap. In the second part, the effective correlation energy is adjusted using a dimensional confinement of the layered iridate Sr2IrO4. Here, the coordination number of each Ir ion is reduced using an a-axis oriented superlattice of one-dimensional IrO2 quantum stripes, where several emergent features are revealed in its insulating Jeff = 1/2 state. In the final study, the effective correlation is tuned in a series of mixed-phase pyrochlore iridate thin films, where the Ir atoms take a corner-shared tetrahedral configuration. Here, a transition between conducting to insulating magnetic domain walls is revealed as the correlation energy is increased via A-site chemical doping. Each of these studies sheds light on the pronounced role the effective correlation energy plays in determining the local subset of phases predicted for iridates and related systems featuring strong spin-orbit interactions

Conducting LaAlO\u3csub\u3e3\u3c/sub\u3e/SrTiO\u3csub\u3e3\u3c/sub\u3e Heterointerfaces on Atomically-Flat Substrates Prepared by Deionized-Water

We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns

Investigations of Metastable Ca\u3csub\u3e2\u3c/sub\u3eIrO\u3csub\u3e4\u3c/sub\u3e Epitaxial Thin-Films: Systematic Comparison with Sr\u3csub\u3e2\u3c/sub\u3eIrO\u3csub\u3e4\u3c/sub\u3e and Ba\u3csub\u3e2\u3c/sub\u3eIrO\u3csub\u3e4\u3c/sub\u3e

We have synthesized thermodynamically metastable Ca2IrO4 thin-films on YAlO3 (110) substrates by pulsed laser deposition. The epitaxial Ca2IrO4 thin-films are of K2NiF4-type tetragonal structure. Transport and optical spectroscopy measurements indicate that the electronic structure of the Ca2IrO4 thin-films is similar to that of Jeff = 1/2 spin-orbit-coupled Mott insulator Sr2IrO4 and Ba2IrO4, with the exception of an increased gap energy. The gap increase is to be expected in Ca2IrO4 due to its increased octahedral rotation and tilting, which results in enhanced electron-correlation, U/W. Our results suggest that the epitaxial stabilization growth of metastable-phase thin-films can be used effectively for investigating layered iridates and various complex-oxide systems

Selective Growth of Epitaxial Sr\u3csub\u3e2\u3c/sub\u3eIrO\u3csub\u3e4\u3c/sub\u3e by Controlling Plume Dimensions in Pulsed Laser Deposition

We report that epitaxial Sr2IrO4 thin-films can be selectively grown using pulsed laser deposition (PLD). Due to the competition between the Ruddlesden-Popper phases of strontium iridates (Srn+1IrnO3n+1), conventional PLD methods often result in mixed phases of Sr2IrO4 (n = 1), Sr3Ir2O7 (n = 2), and SrIrO3 (n = ∞). We have discovered that reduced PLD plume dimensions and slow deposition rates are the key for stabilizing pure Sr2IrO4 phase thin-films, identified by real-time in-situ monitoring of their optical spectra. The slow film deposition results in a thermodynamically stable TiO2\\SrO\IrO2\SrO\SrO configuration at an interface rather than TiO2\\SrO\SrO\IrO2\SrO between a TiO2-terminated SrTiO3 substrate and a Sr2IrO4 thin film, which is consistent with other layered oxides grown by molecular beam epitaxy. Our approach provides an effective method for using PLD to achieve pure phase thin-films of layered materials that are susceptible to several energetically competing phases

Electronic and Optical Properties of La-Doped Sr\u3csub\u3e3\u3c/sub\u3eIr\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e7\u3c/sub\u3e Epitaxial Thin Films

We have investigated structural, transport, and optical properties of tensile strained (Sr1−xLax)3Ir2O7 (x = 0, 0.025, 0.05) epitaxial thin films. While high-Tc superconductivity is predicted theoretically in the system, we have observed that all of the samples remain insulating with finite optical gap energies and Mott variable-range hopping characteristics in transport. Cross-sectional scanning transmission electron microscopy indicates that structural defects such as stacking faults appear in this system. The insulating behavior of the La-doped Sr3Ir2O7 thin films is presumably due to disorder-induced localization and ineffective electron doping of La, which brings to light the intriguing difference between epitaxial thin films and bulk single crystals of the iridates

Optical Signatures of Spin-Orbit Exciton in Bandwidth-Controlled Sr\u3csub\u3e2\u3c/sub\u3eIrO\u3csub\u3e4\u3c/sub\u3e Epitaxial Films via High-Concentration Ca and Ba Doping

We have investigated the electronic and optical properties of (Sr1−xCax)2IrO4 (x = 0–0.375) and (Sr1−yBay)2IrO4 (y = 0–0.375) epitaxial thin films, in which the bandwidth is systematically tuned via chemical substitutions of Sr ions by Ca and Ba. Transport measurements indicate that the thin-film series exhibits insulating behavior, similar to the Jeff = 1/2 spin-orbit Mott insulator Sr2IrO4. As the average A-site ionic radius increases from (Sr1−xCax)2IrO4 to (Sr1−yBay)2IrO4, optical conductivity spectra in the near-infrared region shift to lower energies, which cannot be explained by the simple picture of well-separated Jeff = 1/2 and Jeff = 3/2 bands. We suggest that the two-peak-like optical conductivity spectra of the layered iridates originates from the overlap between the optically forbidden spin-orbit exciton and the intersite optical transitions within the Jeff = 1/2 band. Our experimental results are consistent with this interpretation as implemented by a multiorbital Hubbard model calculation: namely, incorporating a strong Fano-like coupling between the spin-orbit exciton and intersite d−d transitions within the Jeff = 1/2 band

Enhanced Metallic Properties of SrRuO\u3csub\u3e3\u3c/sub\u3e Thin Films via Kinetically Controlled Pulsed Laser Epitaxy

Metal electrodes are a universal element of all electronic devices. Conducting SrRuO3 (SRO) epitaxial thin films have been extensively used as electrodes in complex-oxide heterostructures due to good lattice mismatches with perovskite substrates. However, when compared to SRO single crystals, SRO thin films have shown reduced conductivity and Curie temperatures (TC), which can lead to higher Joule heating and energy loss in the devices. Here, we report that high-quality SRO thin films can be synthesized by controlling the plume dynamics and growth rate of pulsed laser epitaxy (PLE) with real-time optical spectroscopic monitoring. The SRO thin films grown under the kinetically controlled conditions, down to ca. 16 nm in thickness, exhibit both enhanced conductivity and TC as compared to bulk values, due to their improved stoichiometry and a strain-mediated increase of the bandwidth of Ru 4d electrons. This result provides a direction for enhancing the physical properties of PLE-grown thin films and paves a way to improved device applications

Enhanced Metallic Properties of SrRuO\u3csub\u3e3\u3c/sub\u3e Thin Films via Kinetically Controlled Pulsed Laser Epitaxy

Metal electrodes are a universal element of all electronic devices. Conducting SrRuO3 (SRO) epitaxial thin films have been extensively used as electrodes in complex-oxide heterostructures due to good lattice mismatches with perovskite substrates. However, when compared to SRO single crystals, SRO thin films have shown reduced conductivity and Curie temperatures (TC), which can lead to higher Joule heating and energy loss in the devices. Here, we report that high-quality SRO thin films can be synthesized by controlling the plume dynamics and growth rate of pulsed laser epitaxy (PLE) with real-time optical spectroscopic monitoring. The SRO thin films grown under the kinetically controlled conditions, down to ca. 16 nm in thickness, exhibit both enhanced conductivity and TC as compared to bulk values, due to their improved stoichiometry and a strain-mediated increase of the bandwidth of Ru 4d electrons. This result provides a direction for enhancing the physical properties of PLE-grown thin films and paves a way to improved device applications

Unconventional Anomalous Hall Effect from Antiferromagnetic Domain Walls of Nd\u3csub\u3e2\u3c/sub\u3eIr\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e7\u3c/sub\u3e Thin Films

Ferroic domain walls (DWs) create different symmetries and ordered states compared with those in single-domain bulk materials. In particular, the DWs of an antiferromagnet with noncoplanar spin structure have a distinct symmetry that cannot be realized in those of their ferromagnet counterparts. In this paper, we show that an unconventional anomalous Hall effect (AHE) can arise from the DWs of a noncoplanar antiferromagnet, Nd2Ir2O7. Bulk Nd2Ir2O7 has a cubic symmetry; thus, its Hall signal should be zero without an applied magnetic field. The DWs generated in this material break the twofold rotational symmetry, which allows for finite anomalous Hall conductivity. A strong f−d exchange interaction between the Nd and Ir magnetic moments significantly influences antiferromagnetic (AFM) domain switching. Our epitaxial Nd2Ir2O7 thin film showed a large enhancement of the AHE signal when the AFM domains switched, indicating that the AHE is mainly due to DWs. Our paper highlights the symmetry-broken interface of AFM materials as a means of exploring topological effects and their relevant applications

Unconventional anomalous Hall effect from antiferromagnetic domain walls of N d2 i r2 O7 thin films

Ferroic domain walls (DWs) create different symmetries and ordered states compared with those in single-domain bulk materials. In particular, the DWs of an antiferromagnet with noncoplanar spin structure have a distinct symmetry that cannot be realized in those of their ferromagnet counterparts. In this paper, we show that an unconventional anomalous Hall effect (AHE) can arise from the DWs of a noncoplanar antiferromagnet, Nd2Ir2O7. Bulk Nd2Ir2O7 has a cubic symmetry; thus, its Hall signal should be zero without an applied magnetic field. The DWs generated in this material break the twofold rotational symmetry, which allows for finite anomalous Hall conductivity. A strong f-d exchange interaction between the Nd and Ir magnetic moments significantly influences antiferromagnetic (AFM) domain switching. Our epitaxial Nd2Ir2O7 thin film showed a large enhancement of the AHE signal when the AFM domains switched, indicating that the AHE is mainly due to DWs. Our paper highlights the symmetry-broken interface of AFM materials as a means of exploring topological effects and their relevant applications. © 2018 American Physical Societ