TRIM52 promotes proliferation, invasion, and migration of gastric cancer cells by regulating Wnt/β-catenin pathway

Purpose: This study aimed to reveal the role and mechanism of tripartite motif-containing 52 (TRIM52) in gastric cancer (GC) progression.Methods: The Cancer Genome Atlas (TCGA) database was utilized to analyze TRIM52 expression in GC samples and para-carcinoma tissue samples, and the results were confirmed by quantitative realtime polymerase chain reaction. Cell counting kit-8 and colony formation assays were used to evaluate cell viability. Wound healing assay was utilized to analyze cell migration, while Transwell assay was utilized to evaluate cell invasion. TRIM52, proliferating cell nuclear antigen, matrix metalloproteinase-2, Wnt5a, β-catenin, and c-Myc protein levels were measured by western blot.Results: TRIM52 was expressed more in GC tissue samples and cells compared to normal tissues and cells (p < 0.001). Overexpression of TRIM52 promoted growth, migration, and invasion of HGC-27 cells, and silencing inhibited growth, migration, and invasion of HGC-27 cells (p < 0.001). In addition, TRIM52 overexpression increased Wnt5a, β-catenin, and c-Myc protein expression, and silencing decreased Wnt5a, β-catenin, and c-Myc protein expression (p < 0.001 or p < 0.01), indicating that TRIM52 activates Wnt/β-catenin signaling pathway.Conclusion: These findings reveal that TRIM52 facilitates GC cell proliferation, migration and invasion, but activates Wnt/β-catenin signaling

Fabrication and Characterization of Capacitive Micromachined Ultrasonic Transducers with Low-Temperature Wafer Direct Bonding

This paper presents a fabrication method of capacitive micromachined ultrasonic transducers (CMUTs) by wafer direct bonding, which utilizes both the wet chemical and O2plasma activation processes to decrease the bonding temperature to 400 °C. Two key surface properties, the contact angle and surface roughness, are studied in relation to the activation processes, respectively. By optimizing the surface activation parameters, a surface roughness of 0.274 nm and a contact angle of 0° are achieved. The infrared images and static deflection of devices are assessed to prove the good bonding effect. CMUTs having silicon membranes with a radius of 60 μm and a thickness of 2 μm are fabricated. Device properties have been characterized by electrical and acoustic measurements to verify their functionality and thus to validate this low-temperature process. A resonant frequency of 2.06 MHz is obtained by the frequency response measurements. The electrical insertion loss and acoustic signal have been evaluated. This study demonstrates that the CMUT devices can be fabricated by low-temperature wafer direct bonding, which makes it possible to integrate them directly on top of integrated circuit (IC) substrates

Research on High Layer Thickness Fabricated of 316L by Selective Laser Melting

Selective laser melting (SLM) is a potential additive manufacturing (AM) technology. However, the application of SLM was confined due to low efficiency. To improve efficiency, SLM fabrication with a high layer thickness and fine powder was systematically researched, and the void areas and hollow powders can be reduced by using fine powder. Single-track experiments were used to narrow down process parameter windows. Multi-layer fabrication relative density can be reached 99.99% at the exposure time-point distance-hatch space of 120 μs-40 μm-240 μm. Also, the building rate can be up to 12 mm3/s, which is about 3–10 times higher than the previous studies. Three typical defects were found by studying deeply, including the un-melted defect between the molten pools, the micro-pore defect within the molten pool, and the irregular distribution of the splashing phenomenon. Moreover, the microstructure is mostly equiaxed crystals and a small amount of columnar crystals. The averages of ultimate tensile strength, yield strength, and elongation are 625 MPa, 525 MPa, and 39.9%, respectively. As exposure time increased from 80 μs to 200 μs, the grain size is gradually grown up from 0.98 μm to 2.23 μm, the grain aspect ratio is close to 1, and the tensile properties are shown as a downward trend. The tensile properties of high layer thickness fabricated are not significantly different than those with a coarse-powder layer thickness of low in previous research