319 research outputs found

    Molecular cytogenetic identification of a wheat-Thinopyrum ponticum substitution line with stripe rust resistance

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    Thinopyrum ponticum (2n = 10x = 70) has donated rust resistance genes to protect wheat from this fungal disease. In the present study, the line ES-7, derived from the progeny of the crosses between common wheat cultivar Abbondanza and Triticum aestivum–Th. ponticum partial amphiploid line Xiaoyan784, was characterized by cytological, fluorescence in situ hybridization (FISH), genomic in situ hybridization (GISH) and EST-STS marker techniques. Cytological observations revealed that the configuration of ES-7 was 2n = 42 = 21 II. GISH and FISH results showed that ES-7 had two St chromosomes and lacked 5A chromosomes compared to common wheat. The 4A chromosome of ES-7 had small alterations from common wheat. Two EST-SSR markers BE482522 and BG262826, specific to Th. ponticum and tetraploid Pseudoroegneria spicata (2n = 4x = 28), locate on the homoeologous group 5 chromosomes of wheat, could amplify polymorphic bands in ES-7. It was suggested that the introduced St chromosomes belonged to homoeologous group 5, that is, ES-7 was a 5St (5A) disomic substitution line. Furthermore, ES-7 showed highly resistance to mixed stripe rust races of CYR32 and CYR33 in adult stages, which was possibly inherited from Th. ponticum. Thus, ES-7 can be used for wheat stripe rust resistance breeding program

    Identification of Sitobion avenae F. resistance and genetic diversity of wheat landraces from Qinling Mountains, China

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    The aphid Sitobion avenae F. is one of the most harmful pests of wheat growth in the world. A primary field screening test was carried out to evaluate the S. avenae resistance of 527 wheat landraces from Shaanxi. The results indicated that 25 accessions (4.74%) were resistant to S. avenae in the three consecutive seasons, of which accession S849 was highly resistant, and seven accessions were moderately resistant. The majority of S. avenae resistant accessions come from Qinling Mountains. Then, the genetic variability of a set of 33 accessions (25 S. avenae resistant and 8 S. avenae susceptible) originating from Qinling Mountains have been assessed by 20 morphological traits and 99 simple sequence repeat markers (SSRs). Morphological traits and SSRs displayed a high level of genetic diversity within 33 accessions. The clustering of the accessions based on morphological traits and SSR markers showed significant discrepancy according to the geographical distribution, resistance to S. avenae and species of accessions. The highly and moderately resistant landrace accessions were collected from the middle and the east part of Qinling Mountains with similar morphology characters, for example slender leaves with wax, lower leaf area, and high ear density. These S. avenae resistant landraces can be used in wheat aphid resistance breeding as valuable resources

    Nonradiative recombination - Critical in choosing quantum well number for InGaN/GaN light-emitting diodes

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    In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased QW number, a reduced electron leakage can be achieved and hence the efficiency droop can be reduced when a constant Shockley-Read-Hall (SRH) nonradiative recombination lifetime is used for all the samples. However, the experimental results indicate that, though the efficiency droop is suppressed, the LED optical power is first improved and then degraded with the increasing QW number. The analysis of the measured external quantum efficiency (EQE) with the increasing current revealed that an increasingly dominant SRH nonradiative recombination is induced with more epitaxial QWs, which can be related to the defect generation due to the strain relaxation, especially when the effective thickness exceeds the critical thickness. These observations were further supported by the carrier lifetime measurement using a pico-second time-resolved photoluminescence (TRPL) system, which allowed for a revised numerical modeling with the different SRH lifetimes considered. This work provides useful guidelines on choosing the critical QW number when designing LED structures. © 2014 Optical Society of America

    Direct Measurements of the Branching Fractions for D0Ke+νeD^0 \to K^-e^+\nu_e and D0πe+νeD^0 \to \pi^-e^+\nu_e and Determinations of the Form Factors f+K(0)f_{+}^{K}(0) and f+π(0)f^{\pi}_{+}(0)

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    The absolute branching fractions for the decays D0Ke+νeD^0 \to K^-e ^+\nu_e and D0πe+νeD^0 \to \pi^-e^+\nu_e are determined using 7584±198±3417584\pm 198 \pm 341 singly tagged Dˉ0\bar D^0 sample from the data collected around 3.773 GeV with the BES-II detector at the BEPC. In the system recoiling against the singly tagged Dˉ0\bar D^0 meson, 104.0±10.9104.0\pm 10.9 events for D0Ke+νeD^0 \to K^-e ^+\nu_e and 9.0±3.69.0 \pm 3.6 events for D0πe+νeD^0 \to \pi^-e^+\nu_e decays are observed. Those yield the absolute branching fractions to be BF(D0Ke+νe)=(3.82±0.40±0.27)BF(D^0 \to K^-e^+\nu_e)=(3.82 \pm 0.40\pm 0.27)% and BF(D0πe+νe)=(0.33±0.13±0.03)BF(D^0 \to \pi^-e^+\nu_e)=(0.33 \pm 0.13\pm 0.03)%. The vector form factors are determined to be f+K(0)=0.78±0.04±0.03|f^K_+(0)| = 0.78 \pm 0.04 \pm 0.03 and f+π(0)=0.73±0.14±0.06|f^{\pi}_+(0)| = 0.73 \pm 0.14 \pm 0.06. The ratio of the two form factors is measured to be f+π(0)/f+K(0)=0.93±0.19±0.07|f^{\pi}_+(0)/f^K_+(0)|= 0.93 \pm 0.19 \pm 0.07.Comment: 6 pages, 5 figure

    Measurements of J/psi Decays into 2(pi+pi-)eta and 3(pi+pi-)eta

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    Based on a sample of 5.8X 10^7 J/psi events taken with the BESII detector, the branching fractions of J/psi--> 2(pi+pi-)eta and J/psi-->3(pi+pi-)eta are measured for the first time to be (2.26+-0.08+-0.27)X10^{-3} and (7.24+-0.96+-1.11)X10^{-4}, respectively.Comment: 11 pages, 6 figure

    BESII Detector Simulation

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    A Monte Carlo program based on Geant3 has been developed for BESII detector simulation. The organization of the program is outlined, and the digitization procedure for simulating the response of various sub-detectors is described. Comparisons with data show that the performance of the program is generally satisfactory.Comment: 17 pages, 14 figures, uses elsart.cls, to be submitted to NIM

    Measurement of branching fractions for the inclusive Cabibbo-favored ~K*0(892) and Cabibbo-suppressed K*0(892) decays of neutral and charged D mesons

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    The branching fractions for the inclusive Cabibbo-favored ~K*0 and Cabibbo-suppressed K*0 decays of D mesons are measured based on a data sample of 33 pb-1 collected at and around the center-of-mass energy of 3.773 GeV with the BES-II detector at the BEPC collider. The branching fractions for the decays D+(0) -> ~K*0(892)X and D0 -> K*0(892)X are determined to be BF(D0 -> \~K*0X) = (8.7 +/- 4.0 +/- 1.2)%, BF(D+ -> ~K*0X) = (23.2 +/- 4.5 +/- 3.0)% and BF(D0 -> K*0X) = (2.8 +/- 1.2 +/- 0.4)%. An upper limit on the branching fraction at 90% C.L. for the decay D+ -> K*0(892)X is set to be BF(D+ -> K*0X) < 6.6%

    Study of J/ψωK+KJ/\psi \to \omega K^+K^-

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    New data are presented on J/ψωK+KJ/\psi \to \omega K^+K^- from a sample of 58M J/ψJ/\psi events in the upgraded BES II detector at the BEPC. There is a conspicuous signal for f0(1710)K+Kf_0(1710) \to K^+K^- and a peak at higher mass which may be fitted with f2(2150)KKˉf_2(2150) \to K\bar K. From a combined analysis with ωπ+π\omega \pi ^+ \pi ^- data, the branching ratio BR(f0(1710)ππ)/BR(f0(1710)KKˉ)BR(f_0(1710)\to\pi\pi)/BR(f_0(1710) \to K\bar K) is <0.11< 0.11 at the 95% confidence level.Comment: 11 pages, 5 figures. Submitted to Phys. Lett.

    Search for the Lepton Flavor Violation Processes J/ψJ/\psi \to μτ\mu\tau and eτe\tau

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    The lepton flavor violation processes J/ψμτJ/\psi \to \mu\tau and eτe\tau are searched for using a sample of 5.8×107\times 10^7 J/ψJ/\psi events collected with the BESII detector. Zero and one candidate events, consistent with the estimated background, are observed in J/ψμτ,τeνˉeντJ/\psi \to \mu\tau, \tau\to e\bar\nu_e\nu_{\tau} and J/ψeτ,τμνˉμντJ/\psi\to e\tau, \tau\to\mu\bar\nu_{\mu}\nu_{\tau} decays, respectively. Upper limits on the branching ratios are determined to be Br(J/ψμτ)<2.0×106Br(J/\psi\to\mu\tau)<2.0 \times 10^{-6} and Br(J/ψeτ)<8.3×106Br(J/\psi \to e\tau) < 8.3 \times10^{-6} at the 90% confidence level (C.L.).Comment: 9 pages, 2 figure
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