Exploiting the Optical Limits of Thin‐Film Solar Cells: A Review on Light Management Strategies in Cu(In,Ga)Se 2

Light management strategies are of utmost importance to allow Cu(In,Ga)Se2 (CIGS) technology market expansion, as it would enable a conversion efficiency boost as well as thinner absorber layers, increasing sustainability and reducing production costs. However, fabrication and architecture constraints hamper the direct transfer of light management architectures from other photovoltaic technologies. The demand for light management in thin and ultrathin CIGS cells is analyzed by a critical description of the optical loss mechanisms in these devices. Three main pathways to tackle the optical losses are identified: front light management architectures that assist for an omnidirectional low reflection; rear architectures that enable an enhanced optical path length; and unconventional spectral conversion strategies for full spectral harvesting. An outlook over the challenges and developments of light management architectures is performed, establishing a research roadmap for future works in light management for CIGS technology. Following the extensive review, it is expected that combining antireflection, light trapping, and conversion mechanisms, a 27% CIGS solar cell can be achieved.Fundação para a Ciência e a Tecnologia (FCT) and Fundo Social Europeu (FSE) are acknowledged through the projects IF/00133/2015, UIDB/ 50025/2020, UIDP/50025/2020, UIDB/04730/2020, UIDP/04730/2020, and DFA/BD/4564/2020. This research was also supported by NovaCell—Development of novel Ultrathin Solar Cell Architectures for low-light, low-cost, and flexible optoelectronic device project (028075) cofunded by FCT and ERDF through COMPETE2020. This research was supported by InovSolarCells–Development of innovative nanostructured dielectric materials for interface passivation in thin-film solar cells project (029696) cofunded by FCT and ERDF through COMPETE2020. The authors acknowledge the financial support of the project Baterias 2030, with the reference POCI-01-0247-FEDER-046109, cofunded by Operational Programme for Competitiveness and Internationalization (COMPETE 2020), under the Portugal 2020 Partnership Agreement, through the European Regional Development Fund (ERDF)info:eu-repo/semantics/publishedVersio

Cd and Cu interdiffusion in Cu(In,Ga)Se2/CdS hetero-interfaces

We report a detailed characterization of an industry-like prepared Cu(In,Ga)Se2 (CIGS)/CdS heterojunction by scanning transmission electron microscopy (STEM) and photoluminescence (PL). Energy dispersive x-ray spectroscopy (EDS) shows the presence of several regions in the CIGS layer that are Cu deprived and Cd enriched, suggesting the segregation of Cd-Se. Concurrently, the CdS layer shows Cd-deprived regions with the presence of Cu, suggesting a segregation of Cu-S. The two types of segregations are always found together, which, to the best of our knowledge, is observed for the first time. The results indicate that there is a diffusion process that replaces Cu with Cd in the CIGS layer and Cd with Cu in the CdS layer. Using a combinatorial approach we identified that this effect is independent of focused-ion beam sample preparation and of the TEM-grid. Furthermore, photoluminescence measurements before and after an HCl etch indicate a lower degree of defects in the post-etch sample, compatible with the segregates removal. We hypothesize that Cu2-xSe nanodomains react during the chemical bath process to form these segregates since the chemical reaction that dominates this process is thermodynamically favourable. These results provide important additional information about the formation of the CIGS/CdS interface.publishe

Apathy Is Not Associated With a Panel of Biomarkers in Older Adults With HIV Disease

OBJECTIVE: Apathy is prevalent in HIV disease and can significantly impact personal well-being; however, little is known about its neurobiological substrates in persons with HIV (PWH) disease. METHODS: This cross-sectional, correlational study examined the association between apathy and several plasma biomarkers (tumor necrosis factor alpha, kynurenine, tryptophan, quinolinic acid, brain-derived neurotrophic factor, glial fibrillary acidic protein, neurofilament light chain, and phosphorylated tau at position threonine 181) in 109 PWH and 30 seronegative participants ages 50 and older. Apathy was measured with a composite score derived from subscales of the Frontal Systems Behavior Scale and the Profile of Mood States. RESULTS: Multiple regressions showed that PWH had significantly greater severity of apathy symptoms, independent of both data-driven and conceptually-based covariates. Pairwise correlations in the PWH sample indicated that apathy was not significantly associated with any of the measured biomarkers and all of the effect sizes were small. CONCLUSION: Findings suggest that apathy is not strongly associated with peripheral biomarkers of inflammation, neurotrophic support, or neurodegeneration in older PWH. Limitations of this study include the cross-sectional design, the use of self-report measures of apathy, and low rates of viremia. Longitudinal studies in more representative samples of PWH that include a more comprehensive panel of fluid biomarkers, informant and behavioral indicators of apathy, and relevant psychosocial factors might help to further clarify the neurobiological substrates of this complex neuropsychiatric phenomenon

Development of a Plasmonic Light Management Architecture Integrated within an Interface Passivation Scheme for Ultrathin Solar Cells

InovSolarCells (PTDC/FISMAC/29696/2017) cofunded by FCT and the ERDF through COMPETE2020. Publisher Copyright: © 2024 The Authors. Solar RRL published by Wiley-VCH GmbH.In response to climate and resource challenges, the transition to a renewable and decentralized energy system is imperative. Ultrathin Cu(In,Ga)Se2 (CIGS)-based solar cells are compatible with such transition due to their low material usage and improved production throughput. Despite the benchmark efficiency of CIGS technology, ultrathin configurations face efficiency drops arising from increased rear interface recombination and incomplete light absorption. Dielectric passivation schemes address rear interface recombination, but achieving simultaneous electrical and optical gains is crucial for thinning down the absorber. Plasmonic nanoparticles emerge as a solution, enhancing light interaction through resonant scattering. In the proposed architecture, the nanoparticles are encapsulated within a dielectric rear passivation layer, combining effective passivation and light trapping. A controlled deposition and encapsulation of individualized nanoparticles is achieved by an optimized process flow using microfluidic devices and nanoimprint lithography. With the developed plasmonic and passivated architecture, a 3.7 mA cm−2 short-circuit current density and a 23 mV open-circuit voltage improvements are obtained, leading to an almost 2% increase in light-to-power conversion efficiency compared to a reference device. This work showcases the developed architecture potential to tackle the electrical and optical downfalls arising from the absorber thickness reduction, contributing to the dissemination of ultrathin technology.publishersversionpublishe

Will ultrathin CIGS solar cells overtake the champion thin-film cells? Updated SCAPS baseline models reveal main differences between ultrathin and standard CIGS

Cu(In,Ga)Se2 (CIGS) solar cells are amongst the best performing thin-film technologies, with the latest performance gains being mainly due to recent years improvements obtained with post-deposition treatments (PDT). Moreover, thinning of the absorber layer down to sub-micrometre values (ultrathin absorbers) is of extreme importance for CIGS to be even more cost-effective and sustainable. However, electrical and optical limitations, such as rear interface recombination and insufficient light absorption, prevent the widespread implementation of ultrathin CIGS devices. The recent electrical CIGS simulation baseline models have failed to keep up with the experimental developments. Here an updated and experimentally based baseline model for electrical simulations in the Solar Cell Capacitor Simulator (SCAPS) software is presented and discussed with the incorporation of the PDT effects and increased optical accuracy with the support from Finite-Difference Time-Domain (FDTD) simulation results. Furthermore, a champion solar cell with an equivalent architecture validates the developed thin-film model. The baseline model is also applied to ultrathin CIGS solar cell devices, validated with the ultrathin champion cell. Ultimately, these ultrathin models pave the way for an ultrathin baseline model. Simulations results reveal that addressing these absorbers' inherent limitations makes it possible to achieve an ultrathin solar cell with at least 21.0% power conversion efficiency, with open-circuit voltage values even higher than the recent thin-film champion cells.This work was supported by the Fundação para a Ciência e Tecno-logia (FCT) grant numbers DFA/BD/7073/2020, DFA/BD/4564/2020, SFRH/BD/146776/2019, IF/00133/2015, UIDB/50025/2020, UIDP/50025/2020, UIDB/04730/2020, and UIDP/04730/2020. The authors want to acknowledge the funding from the project NovaCell (PTDC/ CTM-CTM/28075/2017). The authors also acknowledge the financial support of the project Baterias 2030, with the reference POCI-01-0247-FEDER-046109, co-funded by Operational Programme for Competitiveness and Internationalization (COMPETE 2020), under the Portugal 2020 Partnership Agreement, through the European Regional Development Fund (ERDFinfo:eu-repo/semantics/submittedVersio

SiOx Patterned Based Substrates Implemented in Cu(In,Ga)Se2 Ultrathin Solar Cells: Optimum Thickness

Interface recombination in sub-µm optoelectronics has a major detrimental impact on devices’ performance, showing the need for tailored passivation strategies to reach a technological boost. In this work, SiOx passivation based substrates were developed and integrated into ultrathin Cu(In,Ga)Se2 (CIGS) solar cells. This study aims to understand the impact of a passivation strategy, which uses several SiOx layer thicknesses (3, 8, and 25 nm) integrated into high performance substrates (HPS). The experimental study is complemented with 3D Lumerical finite-difference time-domain (FDTD) and 2D Silvaco ATLAS optical and electrical simulations, respectively, to perform a decoupling of optical and electronic gains, allowing for a deep discussion on the impact of the SiOx layer thickness in the CIGS solar cell performance. This study shows that as the passivation layer thickness increases, a rise in parasitic losses is observed. Hence, a balance between beneficial passivation and optical effects with harmful architectural constraints defines a threshold thickness to attain the best solar cell performance. Analyzing their electrical parameters, the 8 nm novel SiOx based substrate achieved a light to power conversion efficiency value of 13.2 %, a 1.3 % absolute improvement over the conventional Mo substrate (without SiOx).info:eu-repo/semantics/submittedVersio

Optoelectronic simulations for novel light management concepts in Cu(In,Ga)Se2 solar cells

One of the trends making its way through the Photovoltaics (PV) industry, is the search for new application possibilities. Cu(In,Ga)Se2 (CIGS) thin film solar cells stand out due to their class leading power conversion efficiency of 23.35 %, flexibility, and low cost. The use of sub-μm ultrathin CIGS solar cells has been gaining prevalence, due to the reduction in material consumption and the manufacturing time. Precise CIGS finite-difference time-domain (FDTD) and 3D-drift diffusion baseline models were developed for the Lumerical suite and a 1D electrical model for SCAPS, allowing for an accurate description of the optoelectronic behavior and response of thin and ultrathin CIGS solar cells. As a result, it was possible to obtain accurate descriptions of the optoelectronic behavior of thin and ultrathin solar cells, and to perform an optical study and optimization of novel light management approaches, such as, random texturization, photonic nanostructures, plasmonic nanoparticles, among others. The developed light management architectures enabled to push the optical performance of an ultrathin solar cell and even surpass the performance of a thin film solar cell, enabling a short-circuit current enhancement of 6.15 mA/cm2 over an ultrathin reference device, without any light management integrated.publishe

On the importance of joint mitigation strategies for front, bulk, and rear recombination in ultrathin Cu(In,Ga)Se2 solar cells

Several optoelectronic issues, such as poor optical absorption and recombination limit the power conversion efficiency of ultrathin Cu(In,Ga)Se2 (CIGS) solar cells. To mitigate recombination losses, two combined strategies were implemented: a Potassium Fluoride (KF) Post-Deposition Treatment (PDT) and a rear interface passivation strategy based on an Aluminium Oxide (Al2O3) point contact structure. The simultaneous implementation of both strategies is reported for the first time on ultrathin CIGS devices. Electrical measurements and 1-D simulations demonstrate that, in specific conditions, devices with only KF-PDT may outperform rear interface passivated based devices. By combining KF-PDT and rear interface passivation, an enhancement in open-circuit voltage of 178 mV is reached over devices that have a rear passivation only and of 85 mV over devices with only a KF-PDT process. Time-Resolved Photoluminescence measurements showed the beneficial effects of combining KF-PDT and the rear interface passivation at decreasing recombination losses in the studied devices, enhancing charge carrier lifetime. X-ray photoelectron spectroscopy measurements indicate the presence of a In and Se rich layer that we linked to be a KInSe2 layer. Our results suggest that when bulk and front interface recombination values are very high, they dominate and individual passivation strategies work poorly. Hence, this work shows that for ultrathin devices, passivation mitigation strategies need to be implemented in tandem.publishe

On the importance of joint mitigation strategies for front, bulk, and rear recombination in ultrathin Cu(In,Ga)Se2 solar cells

Several optoelectronic issues, such as poor optical absorption and recombination limit the power conversion efficiency of ultrathin Cu(In,Ga)Se2 (CIGS) solar cells. To mitigate recombination losses, two combined strategies were implemented: a Potassium Fluoride (KF) Post-Deposition Treatment (PDT) and a rear interface passivation strategy based on an Aluminium Oxide (Al2O3) point contact structure. The simultaneous implementation of both strategies is reported for the first time on ultrathin CIGS devices. Electrical measurements and 1-D simulations demonstrate that, in specific conditions, devices with only KF-PDT may outperform rear interface passivated based devices. By combining KF-PDT and rear interface passivation, an enhancement in open-circuit voltage of 178 mV is reached over devices that have a rear passivation only and of 85 mV over devices with only a KF-PDT process. Time-Resolved Photoluminescence measurements showed the beneficial effects of combining KF-PDT and the rear interface passivation at decreasing recombination losses in the studied devices, enhancing charge carrier lifetime. X-ray photoelectron spectroscopy measurements indicate the presence of a In and Se rich layer that we linked to be a KInSe2 layer. Our results suggest that when bulk and front interface recombination values are very high, they dominate and individual passivation strategies work poorly. Hence, this work shows that for ultrathin devices, passivation mitigation strategies need to be implemented in tandem.publishe

Secondary crystalline phases identification in Cu2ZnSnSe4 thin films: contributions from Raman scattering and photoluminescence

In this work, we present the Raman peak positions of the quaternary pure selenide compound Cu2ZnSnSe4 (CZTSe) and related secondary phases that were grown and studied under the same conditions. A vast discussion about the position of the X-ray diffraction (XRD) reflections of these compounds is presented. It is known that by using XRD only, CZTSe can be identified but nothing can be said about the presence of some sec- ondary phases. Thin films of CZTSe, Cu2SnSe3, ZnSe, SnSe, SnSe2, MoSe2 and a-Se were grown, which allowed their investigation by Raman spectroscopy (RS). Here we present all the Raman spectra of these phases and discuss the similarities with the spectra of CZTSe. The effective analysis depth for the common back-scattering geometry commonly used in RS measurements, as well as the laser penetration depth for photoluminescence (PL) were esti- mated for different wavelength values. The observed asymmetric PL band on a CZTSe film is compatible with the presence of CZTSe single-phase and is discussed in the scope of the fluctuating potentials’ model. The estimated bandgap energy is close to the values obtained from absorption measurements. In general, the phase identifica- tion of CZTSe benefits from the contributions of RS and PL along with the XRD discussion.info:eu-repo/semantics/acceptedVersio