Exploiting the Optical Limits of Thin‐Film Solar Cells: A Review on Light Management Strategies in Cu(In,Ga)Se 2

Light management strategies are of utmost importance to allow Cu(In,Ga)Se2 (CIGS) technology market expansion, as it would enable a conversion efficiency boost as well as thinner absorber layers, increasing sustainability and reducing production costs. However, fabrication and architecture constraints hamper the direct transfer of light management architectures from other photovoltaic technologies. The demand for light management in thin and ultrathin CIGS cells is analyzed by a critical description of the optical loss mechanisms in these devices. Three main pathways to tackle the optical losses are identified: front light management architectures that assist for an omnidirectional low reflection; rear architectures that enable an enhanced optical path length; and unconventional spectral conversion strategies for full spectral harvesting. An outlook over the challenges and developments of light management architectures is performed, establishing a research roadmap for future works in light management for CIGS technology. Following the extensive review, it is expected that combining antireflection, light trapping, and conversion mechanisms, a 27% CIGS solar cell can be achieved.Fundação para a Ciência e a Tecnologia (FCT) and Fundo Social Europeu (FSE) are acknowledged through the projects IF/00133/2015, UIDB/ 50025/2020, UIDP/50025/2020, UIDB/04730/2020, UIDP/04730/2020, and DFA/BD/4564/2020. This research was also supported by NovaCell—Development of novel Ultrathin Solar Cell Architectures for low-light, low-cost, and flexible optoelectronic device project (028075) cofunded by FCT and ERDF through COMPETE2020. This research was supported by InovSolarCells–Development of innovative nanostructured dielectric materials for interface passivation in thin-film solar cells project (029696) cofunded by FCT and ERDF through COMPETE2020. The authors acknowledge the financial support of the project Baterias 2030, with the reference POCI-01-0247-FEDER-046109, cofunded by Operational Programme for Competitiveness and Internationalization (COMPETE 2020), under the Portugal 2020 Partnership Agreement, through the European Regional Development Fund (ERDF)info:eu-repo/semantics/publishedVersio

Cd and Cu interdiffusion in Cu(In,Ga)Se2/CdS hetero-interfaces

We report a detailed characterization of an industry-like prepared Cu(In,Ga)Se2 (CIGS)/CdS heterojunction by scanning transmission electron microscopy (STEM) and photoluminescence (PL). Energy dispersive x-ray spectroscopy (EDS) shows the presence of several regions in the CIGS layer that are Cu deprived and Cd enriched, suggesting the segregation of Cd-Se. Concurrently, the CdS layer shows Cd-deprived regions with the presence of Cu, suggesting a segregation of Cu-S. The two types of segregations are always found together, which, to the best of our knowledge, is observed for the first time. The results indicate that there is a diffusion process that replaces Cu with Cd in the CIGS layer and Cd with Cu in the CdS layer. Using a combinatorial approach we identified that this effect is independent of focused-ion beam sample preparation and of the TEM-grid. Furthermore, photoluminescence measurements before and after an HCl etch indicate a lower degree of defects in the post-etch sample, compatible with the segregates removal. We hypothesize that Cu2-xSe nanodomains react during the chemical bath process to form these segregates since the chemical reaction that dominates this process is thermodynamically favourable. These results provide important additional information about the formation of the CIGS/CdS interface.publishe

Will ultrathin CIGS solar cells overtake the champion thin-film cells? Updated SCAPS baseline models reveal main differences between ultrathin and standard CIGS

Cu(In,Ga)Se2 (CIGS) solar cells are amongst the best performing thin-film technologies, with the latest performance gains being mainly due to recent years improvements obtained with post-deposition treatments (PDT). Moreover, thinning of the absorber layer down to sub-micrometre values (ultrathin absorbers) is of extreme importance for CIGS to be even more cost-effective and sustainable. However, electrical and optical limitations, such as rear interface recombination and insufficient light absorption, prevent the widespread implementation of ultrathin CIGS devices. The recent electrical CIGS simulation baseline models have failed to keep up with the experimental developments. Here an updated and experimentally based baseline model for electrical simulations in the Solar Cell Capacitor Simulator (SCAPS) software is presented and discussed with the incorporation of the PDT effects and increased optical accuracy with the support from Finite-Difference Time-Domain (FDTD) simulation results. Furthermore, a champion solar cell with an equivalent architecture validates the developed thin-film model. The baseline model is also applied to ultrathin CIGS solar cell devices, validated with the ultrathin champion cell. Ultimately, these ultrathin models pave the way for an ultrathin baseline model. Simulations results reveal that addressing these absorbers' inherent limitations makes it possible to achieve an ultrathin solar cell with at least 21.0% power conversion efficiency, with open-circuit voltage values even higher than the recent thin-film champion cells.This work was supported by the Fundação para a Ciência e Tecno-logia (FCT) grant numbers DFA/BD/7073/2020, DFA/BD/4564/2020, SFRH/BD/146776/2019, IF/00133/2015, UIDB/50025/2020, UIDP/50025/2020, UIDB/04730/2020, and UIDP/04730/2020. The authors want to acknowledge the funding from the project NovaCell (PTDC/ CTM-CTM/28075/2017). The authors also acknowledge the financial support of the project Baterias 2030, with the reference POCI-01-0247-FEDER-046109, co-funded by Operational Programme for Competitiveness and Internationalization (COMPETE 2020), under the Portugal 2020 Partnership Agreement, through the European Regional Development Fund (ERDFinfo:eu-repo/semantics/submittedVersio

SiOx Patterned Based Substrates Implemented in Cu(In,Ga)Se2 Ultrathin Solar Cells: Optimum Thickness

Interface recombination in sub-µm optoelectronics has a major detrimental impact on devices’ performance, showing the need for tailored passivation strategies to reach a technological boost. In this work, SiOx passivation based substrates were developed and integrated into ultrathin Cu(In,Ga)Se2 (CIGS) solar cells. This study aims to understand the impact of a passivation strategy, which uses several SiOx layer thicknesses (3, 8, and 25 nm) integrated into high performance substrates (HPS). The experimental study is complemented with 3D Lumerical finite-difference time-domain (FDTD) and 2D Silvaco ATLAS optical and electrical simulations, respectively, to perform a decoupling of optical and electronic gains, allowing for a deep discussion on the impact of the SiOx layer thickness in the CIGS solar cell performance. This study shows that as the passivation layer thickness increases, a rise in parasitic losses is observed. Hence, a balance between beneficial passivation and optical effects with harmful architectural constraints defines a threshold thickness to attain the best solar cell performance. Analyzing their electrical parameters, the 8 nm novel SiOx based substrate achieved a light to power conversion efficiency value of 13.2 %, a 1.3 % absolute improvement over the conventional Mo substrate (without SiOx).info:eu-repo/semantics/submittedVersio

On the importance of joint mitigation strategies for front, bulk, and rear recombination in ultrathin Cu(In,Ga)Se2 solar cells

Several optoelectronic issues, such as poor optical absorption and recombination limit the power conversion efficiency of ultrathin Cu(In,Ga)Se2 (CIGS) solar cells. To mitigate recombination losses, two combined strategies were implemented: a Potassium Fluoride (KF) Post-Deposition Treatment (PDT) and a rear interface passivation strategy based on an Aluminium Oxide (Al2O3) point contact structure. The simultaneous implementation of both strategies is reported for the first time on ultrathin CIGS devices. Electrical measurements and 1-D simulations demonstrate that, in specific conditions, devices with only KF-PDT may outperform rear interface passivated based devices. By combining KF-PDT and rear interface passivation, an enhancement in open-circuit voltage of 178 mV is reached over devices that have a rear passivation only and of 85 mV over devices with only a KF-PDT process. Time-Resolved Photoluminescence measurements showed the beneficial effects of combining KF-PDT and the rear interface passivation at decreasing recombination losses in the studied devices, enhancing charge carrier lifetime. X-ray photoelectron spectroscopy measurements indicate the presence of a In and Se rich layer that we linked to be a KInSe2 layer. Our results suggest that when bulk and front interface recombination values are very high, they dominate and individual passivation strategies work poorly. Hence, this work shows that for ultrathin devices, passivation mitigation strategies need to be implemented in tandem.publishe

Secondary crystalline phases identification in Cu2ZnSnSe4 thin films: contributions from Raman scattering and photoluminescence

In this work, we present the Raman peak positions of the quaternary pure selenide compound Cu2ZnSnSe4 (CZTSe) and related secondary phases that were grown and studied under the same conditions. A vast discussion about the position of the X-ray diffraction (XRD) reflections of these compounds is presented. It is known that by using XRD only, CZTSe can be identified but nothing can be said about the presence of some sec- ondary phases. Thin films of CZTSe, Cu2SnSe3, ZnSe, SnSe, SnSe2, MoSe2 and a-Se were grown, which allowed their investigation by Raman spectroscopy (RS). Here we present all the Raman spectra of these phases and discuss the similarities with the spectra of CZTSe. The effective analysis depth for the common back-scattering geometry commonly used in RS measurements, as well as the laser penetration depth for photoluminescence (PL) were esti- mated for different wavelength values. The observed asymmetric PL band on a CZTSe film is compatible with the presence of CZTSe single-phase and is discussed in the scope of the fluctuating potentials’ model. The estimated bandgap energy is close to the values obtained from absorption measurements. In general, the phase identifica- tion of CZTSe benefits from the contributions of RS and PL along with the XRD discussion.info:eu-repo/semantics/acceptedVersio

BRCA2 polymorphic stop codon K3326X and the risk of breast, prostate, and ovarian cancers

Background: The K3326X variant in BRCA2 (BRCA2*c.9976A>T; p.Lys3326*; rs11571833) has been found to be associated with small increased risks of breast cancer. However, it is not clear to what extent linkage disequilibrium with fully pathogenic mutations might account for this association. There is scant information about the effect of K3326X in other hormone-related cancers. Methods: Using weighted logistic regression, we analyzed data from the large iCOGS study including 76 637 cancer case patients and 83 796 control patients to estimate odds ratios (ORw) and 95% confidence intervals (CIs) for K3326X variant carriers in relation to breast, ovarian, and prostate cancer risks, with weights defined as probability of not having a pathogenic BRCA2 variant. Using Cox proportional hazards modeling, we also examined the associations of K3326X with breast and ovarian cancer risks among 7183 BRCA1 variant carriers. All statistical tests were two-sided. Results: The K3326X variant was associated with breast (ORw = 1.28, 95% CI = 1.17 to 1.40, P = 5.9x10- 6) and invasive ovarian cancer (ORw = 1.26, 95% CI = 1.10 to 1.43, P = 3.8x10-3). These associations were stronger for serous ovarian cancer and for estrogen receptor–negative breast cancer (ORw = 1.46, 95% CI = 1.2 to 1.70, P = 3.4x10-5 and ORw = 1.50, 95% CI = 1.28 to 1.76, P = 4.1x10-5, respectively). For BRCA1 mutation carriers, there was a statistically significant inverse association of the K3326X variant with risk of ovarian cancer (HR = 0.43, 95% CI = 0.22 to 0.84, P = .013) but no association with breast cancer. No association with prostate cancer was observed. Conclusions: Our study provides evidence that the K3326X variant is associated with risk of developing breast and ovarian cancers independent of other pathogenic variants in BRCA2. Further studies are needed to determine the biological mechanism of action responsible for these associations

Evaluation of polygenic risk scores for breast and ovarian cancer risk prediction in BRCA1 and BRCA2 mutation carriers

Background: Genome-wide association studies (GWAS) have identified 94 common single-nucleotide polymorphisms (SNPs) associated with breast cancer (BC) risk and 18 associated with ovarian cancer (OC) risk. Several of these are also associated with risk of BC or OC for women who carry a pathogenic mutation in the high-risk BC and OC genes BRCA1 or BRCA2. The combined effects of these variants on BC or OC risk for BRCA1 and BRCA2 mutation carriers have not yet been assessed while their clinical management could benefit from improved personalized risk estimates. Methods: We constructed polygenic risk scores (PRS) using BC and OC susceptibility SNPs identified through population-based GWAS: for BC (overall, estrogen receptor [ER]-positive, and ER-negative) and for OC. Using data from 15 252 female BRCA1 and 8211 BRCA2 carriers, the association of each PRS with BC or OC risk was evaluated using a weighted cohort approach, with time to diagnosis as the outcome and estimation of the hazard ratios (HRs) per standard deviation increase in the PRS. Results: The PRS for ER-negative BC displayed the strongest association with BC risk in BRCA1 carriers (HR = 1.27, 95% confidence interval [CI] = 1.23 to 1.31, P = 8.2 x 10(53)). In BRCA2 carriers, the strongest association with BC risk was seen for the overall BC PRS (HR = 1.22, 95% CI = 1.17 to 1.28, P = 7.2 x 10(-20)). The OC PRS was strongly associated with OC risk for both BRCA1 and BRCA2 carriers. These translate to differences in absolute risks (more than 10% in each case) between the top and bottom deciles of the PRS distribution; for example, the OC risk was 6% by age 80 years for BRCA2 carriers at the 10th percentile of the OC PRS compared with 19% risk for those at the 90th percentile of PRS. Conclusions: BC and OC PRS are predictive of cancer risk in BRCA1 and BRCA2 carriers. Incorporation of the PRS into risk prediction models has promise to better inform decisions on cancer risk management

Protocol for a home-based integrated physical therapy program to reduce falls and improve mobility in people with Parkinson’s disease

Background The high incidence of falls associated with Parkinson’s disease (PD) increases the risk of injuries and immobility and compromises quality of life. Although falls education and strengthening programs have shown some benefit in healthy older people, the ability of physical therapy interventions in home settings to reduce falls and improve mobility in people with Parkinson’s has not been convincingly demonstrated.Methods/design 180 community living people with PD will be randomly allocated to receive either a home-based integrated rehabilitation program (progressive resistance strength training, movement strategy training and falls education) or a home-based life skills program (control intervention). Both programs comprise one hour of treatment and one hour of structured homework per week over six weeks of home therapy. Blinded assessments occurring before therapy commences, the week after completion of therapy and 12 months following intervention will establish both the immediate and long-term benefits of home-based rehabilitation. The number of falls, number of repeat falls, falls rate and time to first fall will be the primary measures used to quantify outcome. The economic costs associated with injurious falls, and the costs of running the integrated rehabilitation program from a health system perspective will be established. The effects of intervention on motor and global disability and on quality of life will also be examined. Discussion This study will provide new evidence on the outcomes and cost effectiveness of home-based movement rehabilitation programs for people living with PD

Number of years of participation in some, but not all, types of physical activity during adolescence predicts level of physical activity in adulthood: Results from a 13-year study

Abstract: Background: Adolescent physical activity (PA) levels track into adulthood. However it is not known if type of PA participated in during adolescence is associated with PA levels later in life. We aimed to identify natural groupings of types of PA and to assess whether number of years participating in these different groupings during adolescence is related to PA level in early adulthood. Methods: 673 adolescents in Montreal, Canada, age 12–13 years at baseline (54 % female), reported participation in 29 physical activities every 3 months over 5 years (1999–2005). They also reported their PA level at age 24 years (2011–12). PA groupings among the 29 physical activities were identified using factor analysis. The association between number of years participating in each grouping during adolescence and PA level at age 24 was estimated using linear regression within a general estimating equation framework. Results: Three PA groupings were identified: “sports”, “fitness and dance”, and “running”. There was a positive linear relationship between number of years participating in sports and running in adolescence and PA level at age 24 years (β (95 % confidence interval) = 0.09 (0.04-0.15); 0.08 (0.01-0.15), respectively). There was no relationship between fitness and dance in adolescence and PA level at age 24. Conclusions: The association between PA participation in adolescence and PA levels in young adulthood may be specific to certain PA types and to consistency of participation during adolescence. Results suggest that efforts to establish the habit of participation in sports and running in adolescence may promote higher PA levels in adulthood