14 research outputs found

    Modification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO2:Er doped with Si-nanoclusters

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    International audienceDuring the fabrication of MOS light emitting devices, the thin film of active material is usually characterized by photoluminescence measurements before electrical contacts are deposited. However, the presence of a conductive contact layer can alter the luminescent properties of the active material. The local optical density of states changes due to the proximity of luminescent species to the interface with the conductive medium (the top electrode), and this modifies the radiative rate of luminescent centers within the active layer. In this paper we report enhancement of the observed erbium photoluminescence rate after deposition of indium tin oxide contacts on thin films of SiO 2 :Er containing silicon nanoclusters, and relate this to Purcell enhancement of the erbium radiative rate

    Electrically pumped silicon waveguide light sources

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    We report simulations of electrically pumped waveguide emitters in which the emissive layer contains silicon nanoclusters and erbium ions. Plasmonic coupling to metallic or semi-metallic overlayers provides enhancement of the radiative rate of erbium ions, enabling high quantum efficiency emission. Using 2D and 3D finite difference time domain (FDTD) simulations we show that up to 75% of the light emitted from the active layer can be coupled into a nanowire silicon rib waveguide. Our results suggest that such devices, which can readily be fabricated using CMOS processing techniques, pave the way for viable waveguide optical sources to be realized in silicon photonics

    Probing energy transfer in an ensemble of silicon nanocrystals

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    Time-resolved photoluminescence measurements of silicon nanocrystals formed by ion implantation of silicon into silicon dioxide reveal multi-exponential luminescence decays. Three discrete time components are apparent in the rise and decay data, which we associate with different classes of nanocrystals. The values of decay time are remarkably constant with emission energy, but the relative contributions of the three components vary strongly across the luminescence band. In keeping with the quantum confinement model for luminescence, we assign emission at high energies to small nanocrystals and that at low energies to large nanocrystals. By deconvolving the decay data over the full emission band, it is possible to study the migration of excitation from smaller (luminescence donor) to larger (luminescence acceptor) nanocrystals. We propose a model of diffusion of excitation between neighboring nanocrystals, with long lifetime emission being from the largest nanocrystal in the local neighborhood. Our data also allow us to study the saturation of acceptor nanocrystals, effectively switching off excitation transfer, and Auger recombination in non-interacting nanocrystals. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3622151

    Tunable single-mode coupled-cavity laser in a standard InP photonics platform

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    We present a wavelength tunable, coupled-cavity laser in a standard indium phosphide multiproject wafer shuttle which did not support distributed feedback gratings. The single-mode operation was enabled by reflections from slots in the laser cavity. The wavelength of the laser emission was tunable over 20 nm near a wavelength of 1560 nm via the currents applied to each section of the laser. A maximum side-mode suppression ratio of 46 dB was observed. The delayed self-heterodyne spectrum of the laser showed a Voigt line shape, corresponding to optical linewidths of 3.7 MHz for the Lorentzian and 88 MHz for the Gaussian contributions

    Treatment of native valve endocarditis due to coagulase negative staphylococci, complicated by a drug reaction with eosinophilia and systemic symptoms (DRESS syndrome)

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    Coagulase negative staphylococci (CoNS) are a rare cause of native valve endocarditis (NVE). However, they are emerging as important pathogens of NVE.  We  describe  a  61  year  old  male  who  developed  NVE  caused by CoNS and presented  with  cerebral  embolic  phenomena.  He was treated with vancomycin and subsequently with linezolid. He developed a drug reaction with eosinophilia and systemic symptoms (DRESS syndrome) to linezolid which was managed successfully.  The patient’s recovery was good after six weeks of treatment with anti-staphylococcal antibiotics.</p
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