Prediction of vertical bearing capacity of waveform micropile

This study proposes a predictive equation for bearing capacity considering the behaviour characteristics of a waveform micropile that can enhance the bearing capacity of a conventional micropile. The bearing capacity of the waveform micropile was analysed by a three-dimensional numerical model with soil and pile conditions obtained from the field and centrifuge tests. The load-transfer mechanism of the waveform micropile was revealed by the numerical analyses, and a new predictive equation for the bearing capacity was proposed. The bearing capacities of the waveform micropile calculated by the new equation were comparable with those measured from the field and centrifuge tests. This validated a prediction potential of the new equation for bearing capacity of waveform micropiles

Global Hilbert Expansion for the Vlasov-Poisson-Boltzmann System

We study the Hilbert expansion for small Knudsen number $\varepsilon$ for the Vlasov-Boltzmann-Poisson system for an electron gas. The zeroth order term takes the form of local Maxwellian: $ F_{0}(t,x,v)=\frac{\rho_{0}(t,x)}{(2\pi \theta_{0}(t,x))^{3/2}} e^{-|v-u_{0}(t,x)|^{2}/2\theta_{0}(t,x)},\text{\ }\theta_{0}(t,x)=K\rho_{0}^{2/3}(t,x).$Our main result states that if the Hilbert expansion is valid at$t=0$for well-prepared small initial data with irrotational velocity$u_0$, then it is valid for$0\leq t\leq \varepsilon ^{-{1/2}\frac{2k-3}{2k-2}},$where$\rho_{0}(t,x)$and$ u_{0}(t,x)$satisfy the Euler-Poisson system for monatomic gas$\gamma=5/3$

BIOMECHANICS AND POTENTIAL INJURY MECHANISMS OF WRESTLING

Wrestling is one of the oldest and most popular competitive sports in the world. However, knowledge of the biomechanics of wrestling is not well established and the biomechanical risk factors of injuries remain unclear (Boden et al., 2002). The purpose of this study was to investigate the joint kinematics of the lower limbs and the center of pressure (COP) movements in Greco-Roman style (GR) and free style (FS) wrestlers during tackle defense

Discovery From Non-Parties (Third-Party Discovery) in International Arbitration

International arbitration rules and many arbitration laws usually provide procedures that permit tribunals to order parties to disclose documents and other materials to the other parties.1 More complex are the rules that determine opportunities to obtain discovery from persons that are not party to the arbitration (third-party discovery). This article will review third-party discovery under the Federal Arbitration Act (FAA) and the provisions of the US Code s.1782 that authorise US courts to act in aid of actions before foreign tribunals. Section 1782 has unique interest at this time because it figured prominently in the EU antitrust investigation of Intel that was initiated on request from Advanced Micro Devices (AMD). Early in that investigation, AMD filed a s.1782 request in the US District Court to obtain evidence from US sources for submission to the DG-Competition of the European Commission (EC). This request ultimately led to the Supreme Court’s decision in Intel Corp v Advanced Micro Devices Inc2 which appeared to significantly expand the scope of s.1782. Ironically, after AMD won on key legal issues in the Supreme Court, the District Court on remand exercised its discretion and denied the request for judicial assistance. This paper first describes the FAA non-party discovery rules and the split among the federal appellate courts concerning the authority of arbitrators to order prehearing discovery from non-parties. Next, it provides an analysis of the meaning of the terms “interested party” and “tribunal”—terms that were controversially interpreted by the Supreme Court in Intel and are essential to the application of s.1782. Finally, it discusses the “discretionary” factors used by the federal courts in deciding whether to grant a s.1782 request even when the statutory criteria are met. The opportunity to exercise this discretion seems to rebut the argument that the Supreme Court’s interpretation of s.1782 gives participants before foreign tribunals more discovery rights in the United States than are available to the parties in arbitrations covered by the FAA

Interpolation function of the genocchi type polynomials

The main purpose of this paper is to construct not only generating functions of the new approach Genocchi type numbers and polynomials but also interpolation function of these numbers and polynomials which are related to a, b, c arbitrary positive real parameters. We prove multiplication theorem of these polynomials. Furthermore, we give some identities and applications associated with these numbers, polynomials and their interpolation functions.Comment: 14 page

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain

Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by epitaxial strain. However, despite the rich nature of strain effects on oxide materials properties, such as ferroelectricity, magnetism, and superconductivity, the relationship between the strain and electrical properties of the 2DEG at the LaAlO3/SrTiO3 heterointerface remains largely unexplored. Here, we use different lattice constant single crystal substrates to produce LaAlO3/SrTiO3 interfaces with controlled levels of biaxial epitaxial strain. We have found that tensile strained SrTiO3 destroys the conducting 2DEG, while compressively strained SrTiO3 retains the 2DEG, but with a carrier concentration reduced in comparison to the unstrained LaAlO3/SrTiO3 interface. We have also found that the critical LaAlO3 overlayer thickness for 2DEG formation increases with SrTiO3 compressive strain. Our first-principles calculations suggest that a strain-induced electric polarization in the SrTiO3 layer is responsible for this behavior. It is directed away from the interface and hence creates a negative polarization charge opposing that of the polar LaAlO3 layer. This both increases the critical thickness of the LaAlO3 layer, and reduces carrier concentration above the critical thickness, in agreement with our experimental results. Our findings suggest that epitaxial strain can be used to tailor 2DEGs properties of the LaAlO3/SrTiO3 heterointerface