16,704 research outputs found
Prediction of vertical bearing capacity of waveform micropile
This study proposes a predictive equation for bearing capacity considering the behaviour characteristics of a waveform micropile that can enhance the bearing capacity of a conventional micropile. The bearing capacity of the waveform micropile was analysed by a three-dimensional numerical model with soil and pile conditions obtained from the field and centrifuge tests. The load-transfer mechanism of the waveform micropile was revealed by the numerical analyses, and a new predictive equation for the bearing capacity was proposed. The bearing capacities of the waveform micropile calculated by the new equation were comparable with those measured from the field and centrifuge tests. This validated a prediction potential of the new equation for bearing capacity of waveform micropiles
Global Hilbert Expansion for the Vlasov-Poisson-Boltzmann System
We study the Hilbert expansion for small Knudsen number for the
Vlasov-Boltzmann-Poisson system for an electron gas. The zeroth order term
takes the form of local Maxwellian: $ F_{0}(t,x,v)=\frac{\rho_{0}(t,x)}{(2\pi
\theta_{0}(t,x))^{3/2}} e^{-|v-u_{0}(t,x)|^{2}/2\theta_{0}(t,x)},\text{\
}\theta_{0}(t,x)=K\rho_{0}^{2/3}(t,x).t=0u_00\leq t\leq \varepsilon
^{-{1/2}\frac{2k-3}{2k-2}},\rho_{0}(t,x) u_{0}(t,x)\gamma=5/3$
BIOMECHANICS AND POTENTIAL INJURY MECHANISMS OF WRESTLING
Wrestling is one of the oldest and most popular competitive sports in the world. However, knowledge of the biomechanics of wrestling is not well established and the biomechanical risk factors of injuries remain unclear (Boden et al., 2002). The purpose of this study was to investigate the joint kinematics of the lower limbs and the center of pressure (COP) movements in Greco-Roman style (GR) and free style (FS) wrestlers during tackle defense
Discovery From Non-Parties (Third-Party Discovery) in International Arbitration
International arbitration rules and many arbitration laws usually provide procedures that permit tribunals to order parties to disclose documents and other materials to the other parties.1 More complex are the rules that determine opportunities to obtain discovery from persons that are not party to the arbitration (third-party discovery). This article will review third-party discovery under the Federal Arbitration Act (FAA) and the provisions of the US Code s.1782 that authorise US courts to act in aid of actions before foreign tribunals. Section 1782 has unique interest at this time because it figured prominently in the EU antitrust investigation of Intel that was initiated on request from Advanced Micro Devices (AMD). Early in that investigation, AMD filed a s.1782 request in the US District Court to obtain evidence from US sources for submission to the DG-Competition of the European Commission (EC). This request ultimately led to the Supreme Court’s decision in Intel Corp v Advanced Micro Devices Inc2 which appeared to significantly expand the scope of s.1782. Ironically, after AMD won on key legal issues in the Supreme Court, the District Court on remand exercised its discretion and denied the request for judicial assistance. This paper first describes the FAA non-party discovery rules and the split among the federal appellate courts concerning the authority of arbitrators to order prehearing discovery from non-parties. Next, it provides an analysis of the meaning of the terms “interested party” and “tribunal”—terms that were controversially interpreted by the Supreme Court in Intel and are essential to the application of s.1782. Finally, it discusses the “discretionary” factors used by the federal courts in deciding whether to grant a s.1782 request even when the statutory criteria are met. The opportunity to exercise this discretion seems to rebut the argument that the Supreme Court’s interpretation of s.1782 gives participants before foreign tribunals more discovery rights in the United States than are available to the parties in arbitrations covered by the FAA
Interpolation function of the genocchi type polynomials
The main purpose of this paper is to construct not only generating functions
of the new approach Genocchi type numbers and polynomials but also
interpolation function of these numbers and polynomials which are related to a,
b, c arbitrary positive real parameters. We prove multiplication theorem of
these polynomials. Furthermore, we give some identities and applications
associated with these numbers, polynomials and their interpolation functions.Comment: 14 page
Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain
Recently a metallic state was discovered at the interface between insulating
oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional
electron gas (2DEG) have attracted significant interest due to its potential
applications in nanoelectronics. Control over this carrier density and mobility
of the 2DEG is essential for applications of these novel systems, and may be
achieved by epitaxial strain. However, despite the rich nature of strain
effects on oxide materials properties, such as ferroelectricity, magnetism, and
superconductivity, the relationship between the strain and electrical
properties of the 2DEG at the LaAlO3/SrTiO3 heterointerface remains largely
unexplored. Here, we use different lattice constant single crystal substrates
to produce LaAlO3/SrTiO3 interfaces with controlled levels of biaxial epitaxial
strain. We have found that tensile strained SrTiO3 destroys the conducting
2DEG, while compressively strained SrTiO3 retains the 2DEG, but with a carrier
concentration reduced in comparison to the unstrained LaAlO3/SrTiO3 interface.
We have also found that the critical LaAlO3 overlayer thickness for 2DEG
formation increases with SrTiO3 compressive strain. Our first-principles
calculations suggest that a strain-induced electric polarization in the SrTiO3
layer is responsible for this behavior. It is directed away from the interface
and hence creates a negative polarization charge opposing that of the polar
LaAlO3 layer. This both increases the critical thickness of the LaAlO3 layer,
and reduces carrier concentration above the critical thickness, in agreement
with our experimental results. Our findings suggest that epitaxial strain can
be used to tailor 2DEGs properties of the LaAlO3/SrTiO3 heterointerface
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