Preliminary Studies about Synthesis and Electrical Properties of Ruthenium Doped Lanthanum Strontium Titanate as a Potential Anode of Solid Oxide Fuel Cells

The lanthanum strontium titanate (LST) is one of the most representative alternative anode materials. Although it shows low catalytic properties, the disadvantage could be improved by doping of ruthenium which is widely used as catalyst under steam reforming reaction or oxidation reaction. The ruthenium doped lanthanum strontium titanates (LSTRs) powders were synthesized by complex EDTA-citrate method showing well crystallinity. Additionally, the prepared samples were evaluated through various experimental tests. For example, the stability in the reducing atmosphere and chemical compatibility with YSZ electrolyte such as reactivity test in high temperature were confirmed by XRD (X-ray diffraction). And electrical conductivity in wet H-2 atmosphere at 900 degrees C is about 350.6 S/cm, 342.4 S/cm and 179.1 S/cm with sintered bar of LST, LSTR0.02 and LSTR0.05, respectively.open1111Nsciescopu

Performance of an Anode Supported Solid Oxide Fuel Cell with Indirect Internal Reforming

The conversion of fuel into hydrogen-rich gas is necessary for fuel cells. This can be achieved either indirectly in fuel processing systems, in which the hydrocarbon feed is converted in an external catalytic steam reformer, or directly in the fuel cell. In this paper, the unit module of solid oxide fuel cell was assembled by one reformer and four cells. The reformer was fabricated by extruded dummy cell and combined with two cells on each side respectively. The reforming catalyst was coated on internal channel of the dummy cell. The unit module has successfully tested with wet CH4 as fuel and air as oxidant and its maximum power density exceeded 150mW/cm(2) at 750 degrees C.open110Nsciescopu

Damage buildup in GaN under ion bombardment

The damage buildup until amorphization in wurtzite GaN films under keV Light(C-12) and heavy (Au-197) ion bombardment at room and liquid nitrogen (LN2) temperatures is studied by Rutherford backscattering/channeling (RBS/C) spectrometry and transmission electron microscopy (TEM). The effect of beam flux on implantation damage in GaN is reported. A marked similarity between damage buildup for Light and heavy ion bombardment regimes is observed. The results point to substantial dynamic annealing of irradiation defects even during heavy ion bombardment at LN2 temperature. Amorphization starts from the GaN surface with increasing ion dose for both LN2 and room-temperature bombardment with light or heavy ions. A strong surface defect peak, seen by RBS/C, arises from an amorphous layer at the GaN surface, as indicated by TEM. The origin of such an amorphous layer is attributed to the trapping of mobile point defects by the GaN surface, as suggested by the flux behavior. However, in the samples implanted with light ions to low doses (1 X 10(15) cm(-2)), no amorphous layer on the GaN surface is revealed by TEM. Damage buildup is highly sig-modal for LN: temperature irradiation with light or heavy ions. Formation of planar defects in the crystal bulk is assumed to provide a "nucleation site" for amorphization with increasing ion dose during irradiation at LN2 temperature. For room-temperature bombardment with heavy ions. the damage in the GaN bulk region saturates at a level lower than that of the amorphous phase, as measured by RBS/C, and amorphization proceeds From the GaN surface with increasing ion dose. For such a saturation regime at room temperature, implantation damage in the bulk consists of point-defect clusters and planar defects which are parallel to the basal plane of the GaN film. Various defect interaction processes in GaN during ion bombardment are proposed to explain the observed somewhat unexpected behavior of disorder buildup

Effect of ion species on the accumulation of ion-beam damage in GaN

Wurtzite GaN epilayers bombarded with a wide range of ion species (10 keV H-1, 40 keV C-12, 50 keV O-16, 600 keV Si-28, 130 keV Cu-63, 200 keV Ag-107, 300 keV Au-197, and 500 keV Bi-209) are studied by a combination of Rutherford backscattering/channeling (RBS/C) spectrometry and cross-sectional transmission electron microscopy. Results show that strong dynamic annealing processes lead to a complex dependence of the damage-buildup behavior in GaN on ion species. For room-temperature bombardment with different ion species, bulk disorder, as measured by RBS/C, saturates at some level that is below the random level, and amorphization proceeds layer-by-layer from the GaN surface with increasing ion dose. The saturation level of bulk disorder depends on implant conditions and is much higher for light-ion bombardment than for the heavy-ion irradiation regime. In the case of light ions, when ion doses needed to observe significant lattice disorder in GaN are large (greater than or similar to 10(16) cm(-2)), chemical effects of implanted species dominate. Such implanted atoms appear to stabilize an amorphous phase in GaN and/or to act as effective traps for ion-beam-generated mobile point defects and enhance damage buildup. In particular, the presence of a large conce ntration of carbon in GaN strongly enhances the accumulation of implantation-produced disorder. For heavier ions, where chemical effects of implanted species seem to be negligible, an increase in the density of collision cascades strongly increases the level of implantation-produced lattice disorder in the bulk as well as the rate of layer-by-layer amorphization proceeding from the surface. Such an increase in stable damage and the rate of planar amorphization is attributed to (i) an increase in the defect clustering efficiency with increasing density of ion-beam-generated defects and/or (ii) a superlinear dependence of ion-beam-generated defects, which survive cascade quenching, on the density of collision cascades. Physical mechanisms responsible for such a superlinear dependence of ion-beam-generated defects on collision cascade density are considered. Mechanisms of surface and bulk amorphization in GaN are also discussed

Dynamic annealing in III-nitrides under ion bombardment

We study the evolution of structural defects in AlxGa1-xN films (with x=0.0-0.6) bombarded with kilo-electron-volt heavy ions at 77 and 300 K. We use a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy. Results show that an increase in Al content not only strongly enhances dynamic annealing processes but can also change the main features of the amorphization behavior. In particular, the damage buildup behavior at 300 K is essentially similar for all the AlGaN films studied. Ion-beam-produced disorder at 300 K accumulates preferentially in the crystal bulk region up to a certain saturation level (similar to50%-60% relative disorder). Bombardment at 300 K above a critical fluence results in a rapid increase in damage from the saturation level up to complete disordering, with a buried amorphous layer nucleating in the crystal bulk. However, at 77 K, the saturation effect of lattice disorder in the bulk occurs only for xgreater than or similar to0.1. Based on the analysis of these results for AlGaN and previously reported data for InGaN, we discuss physical mechanisms of the susceptibility of group-III nitrides to ion-beam-induced disordering and to the crystalline-to-amorphous phase transition. (C) 2004 American Institute of Physics

Blistering of H-implanted GaN

Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: (i) ion energy (from 20 to 150 keV), (ii) ion dose (up to 1.2x10(18) cm(-2)), (iii) implantation temperature (from -196 to 250 degreesC), and (iv) annealing temperature (up to 900 degreesC). Results show that both the onset of blistering and blistering surface patterns strongly depend on implant conditions. This study may have significant technological implications for ion slicing and "etching" of GaN using high-dose implantation with H ions. (C) 2002 American Institute of Physics

Maspin expression in gastrointestinal stromal tumors

<p>Abstract</p> <p>Background</p> <p>To investigate the role of maspin expression in the progression of gastrointestinal stromal tumors, and its value as a prognostic indicator.</p> <p>Methods</p> <p>In the study 54 patients with GIST diagnosis were included in Uludag University of Faculty of Medicine, Department of Pathology between 1997-2007. The expression of maspin in 54 cases of gastrointestinal stromal tumor was detected by immunohistochemistry and compared with the clinicopathologic tumor parameters.</p> <p>Results</p> <p>The positive expression rates for maspin in the GISTs were 66,6% (36 of 54 cases). Maspin overexpression was detected in 9 of 29 high risk tumors (31%) and was significantly higher in very low/low (78.6%) and intermediate-risk tumors (63.6%) than high-risk tumors.</p> <p>Conclusions</p> <p>Maspin expression might be an important factor in tumor progression and patient prognosis in GIST. In the future, larger series may be studied to examine the prognostic significance of maspin in GISTs and, of course, maspin expression may be studied in different mesenchymal tumors.</p

Spinons and triplons in spatially anisotropic frustrated antiferromagnets

The search for elementary excitations with fractional quantum numbers is a central challenge in modern condensed matter physics. We explore the possibility in a realistic model for several materials, the spin-1/2 spatially anisotropic frustrated Heisenberg antiferromagnet in two dimensions. By restricting the Hilbert space to that expressed by exact eigenstates of the Heisenberg chain, we derive an effective Schr\"odinger equation valid in the weak interchain-coupling regime. The dynamical spin correlations from this approach agree quantitatively with inelastic neutron measurements on the triangular antiferromagnet Cs_2CuCl_4. The spectral features in such antiferromagnets can be attributed to two types of excitations: descendents of one-dimensional spinons of individual chains, and coherently propagating "triplon" bound states of spinon pairs. We argue that triplons are generic features of spatially anisotropic frustrated antiferromagnets, and arise because the bound spinon pair lowers its kinetic energy by propagating between chains.Comment: 16 pages, 6 figure

Prevention of Neural Tube Defects: A Cross-Sectional Study of the Uptake of Folic Acid Supplementation in Nearly Half a Million Women

BACKGROUND: Taking folic acid supplements before pregnancy to reduce the risk of a neural tube defect (NTD) is especially important in countries without universal folic acid fortification. The extent of folic acid supplementation among women who had antenatal screening for Down's syndrome and NTDs at the Wolfson Institute of Preventive Medicine, London between 1999 and 2012 was assessed. METHODS AND FINDINGS: 466,860 women screened provided details on folic acid supplementation. The proportion of women who took folic acid supplements before pregnancy was determined according to year and characteristics of the women. The proportion of women taking folic acid supplements before pregnancy declined from 35% (95% CI 34%-35%) in 1999-2001 to 31% (30%-31%) in 2011-2012. 6% (5%-6%) of women aged under 20 took folic acid supplements before pregnancy compared with 40% of women aged between 35 and 39. Non-Caucasian women were less likely to take folic acid supplements before pregnancy than Caucasian women; Afro-Caribbean 17% (16%-17%), Oriental 25% (24%-25%) and South Asian 20% (20%-21%) compared with 35% (35%-35%) for Caucasian women. 51% (48%-55%) of women who previously had an NTD pregnancy took folic acid supplements before the current pregnancy. CONCLUSIONS: The policy of folic acid supplementation is failing and has led to health inequalities. This study demonstrates the need to fortify flour and other cereal grain with folic acid in all countries of the world

Celecoxib exerts protective effects in the vascular endothelium via COX-2-independent activation of AMPK-CREB-Nrf2 signalling

Although concern remains about the athero-thrombotic risk posed by cyclo-oxygenase (COX)-2-selective inhibitors, recent data implicates rofecoxib, while celecoxib appears equivalent to NSAIDs naproxen and ibuprofen. We investigated the hypothesis that celecoxib activates AMP kinase (AMPK) signalling to enhance vascular endothelial protection. In human arterial and venous endothelial cells (EC), and in contrast to ibuprofen and naproxen, celecoxib induced the protective protein heme oxygenase-1 (HO-1). Celecoxib derivative 2,5-dimethyl-celecoxib (DMC) which lacks COX-2 inhibition also upregulated HO-1, implicating a COX-2-independent mechanism. Celecoxib activated AMPKα(Thr172) and CREB-1(Ser133) phosphorylation leading to Nrf2 nuclear translocation. Importantly, these responses were not reproduced by ibuprofen or naproxen, while AMPKα silencing abrogated celecoxib-mediated CREB and Nrf2 activation. Moreover, celecoxib induced H-ferritin via the same pathway, and increased HO-1 and H-ferritin in the aortic endothelium of mice fed celecoxib (1000 ppm) or control chow. Functionally, celecoxib inhibited TNF-α-induced NF-κB p65(Ser536) phosphorylation by activating AMPK. This attenuated VCAM-1 upregulation via induction of HO-1, a response reproduced by DMC but not ibuprofen or naproxen. Similarly, celecoxib prevented IL-1β-mediated induction of IL-6. Celecoxib enhances vascular protection via AMPK-CREB-Nrf2 signalling, a mechanism which may mitigate cardiovascular risk in patients prescribed celecoxib. Understanding NSAID heterogeneity and COX-2-independent signalling will ultimately lead to safer anti-inflammatory drugs