SYNTHESIS AND ELECTRICAL PROPERTIES OF THIN FILMS OF FULLERITES ON THE VARIOUS SUBSTRATES

In the process of intercalation, C60 samples in the form of polycrystalline films prepared on various substrates are used. To obtain a homogeneous doping we test two geometrical set-ups of our apparatus, horizontal and vertical. In the present work we focus on the study of transport properties of the samples. We demonstrate the temperature dependence of the conductivity of doped C60 films during the doping process. The time evolutions of the sample resistivity after its exposure to the atmosphere are studied. The structural properties of the samples are examined by X-ray diffraction technique in Bragg-Brentano geometry and Raman Spectroscopy. Scanning Electron Microscopy is used to compare the surface morphology of the undoped and doped C60 films

Women's attitudes towards mechanisms of action of family planning methods: survey in primary health centres in Pamplona, Spain

Irala J de, Lopez del Burgo C, Lopez de Fez CM, Arredondo J, Mikolajczyk RT, Stanford JB. Women's attitudes towards mechanisms of action of family planning methods: survey in primary health centres in Pamplona, Spain. BMC Women's Health. 2007;7(1): 10.Background: Informed consent in family planning includes knowledge of mechanism of action. Some methods of family planning occasionally work after fertilization. Knowing about postfertilization effects may be important to some women before choosing a certain family planning method. The objective of this survey is to explore women's attitudes towards postfertilization effects of family planning methods, and beliefs and characteristics possibly associated with those attitudes. Methods: Cross-sectional survey in a sample of 755 potentially fertile women, aged 18–49, from Primary Care Health Centres in Pamplona, Spain. Participants were given a 30-item, self-administered, anonymous questionnaire about family planning methods and medical and surgical abortion. Logistic regression was used to identify variables associated with women's attitudes towards postfertilization effects. Results: The response rate was 80%. The majority of women were married, held an academic degree and had no children. Forty percent of women would not consider using a method that may work after fertilization but before implantation and 57% would not consider using one that may work after implantation. While 35.3% of the sample would stop using a method if they learned that it sometimes works after fertilization, this percentage increased to 56.3% when referring to a method that sometimes works after implantation. Women who believe that human life begins at fertilization and those who consider it is important to distinguish between natural and induced embryo loss were less likely to consider the use of a method with postfertilization effects. Conclusion: Information about potential postfertilization effects of family planning methods may influence women's acceptance and choice of a particular family planning method. Additional studies in other populations are necessary to evaluate whether these beliefs are important to those populations

Creation of stable nanoconstrictions in metallic thin films via progressive narrowing by focused-ion-beam technique and in situ control of resistance

This work describes the use of focused-ion-beam for the fabrication of metallic nanoconstrictions on a Fe thin film with in situ monitoring of the structure’s resistance. With this approach the sequential FIB steps that are used for the gradual narrowing of the nanoconstriction are observed as changes in the measured resistance, thus providing very good control of the milling process. The FIB patterning enables precise termination of the process just before the crossover between the metallic and tunneling regimes near the conductance quantum value G0 (G0 = 2e2/h). Compared to previous approaches to create nanoconstrictions with focused-ion-beam, this new technique determines precisely the current direction and minimizes Ga damage at the nanoconstriction

Media 1: Pulse-analysis-pulse investigation of femtosecond laser-induced periodic surface structures on silicon in air

Originally published in Optics Express on 21 April 2014 (oe-22-8-9254

Microstructural characterization of surface damage through ultra-short laser pulses

Electron back-scatter diffraction (EBSD) technique, commonly used to study the microstructural characteristics of materials, was employed for the investigation of the surface damage induced through ultra-short laser pulses. Single-crystal silicon surface was irradiated with an Ytterbium-doped YAG (Trumpf-TruMicro 5050) laser source generating laser pulses of 6.7 ps duration, a 1030 nm wavelength and linear polarization. The laser fluence level was set to values lower than the single-pulse modification threshold of the material. The laser pulses were delivered on the surface at conditions of lateral displacement, i.e. a train of laser pulses with a partial overlap (laser track). This approach made it possible to investigate the early stages of modification of the surface. Scanning electron microscope equipped with a field emission gun (Philips XL30 SEM FEG) and EDAX-TSL EBSD system was used for inspection of the surface modifications initiated with pulsed laser radiation. Depth of the generation of back-scattered electrons at different acceleration voltages of the primary beam was estimated by the use of Monte-Carlo simulation. Trajectories of primary and back-scattered electrons in a flat Si surface were generated at an angle of 74° from the surface normal, which is the angle used for the EBSD observations. High sensitivity of EBSD signal allows an estimate of the depth and intensity of the laser induced damage to the crystal lattice. It is found that the thickness of amorphous layer increases gradually with a distance from the feature center. The similarity of surface damage profiles observed at different accelerating voltages of the primary beam indicates that the damage is formed via a gradual crystal damage accumulation in subsurface layer and via the formation and growth of an amorphous layer from the surface.<br/