3,446 research outputs found

    Ultra-fast calorimetry study of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> crystallization between dielectric layers

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    Phase changes in chalcogenides such as Ge2Sb2Te5 can be exploited in non-volatile random-access memory, with fast crystallization crucial for device operation. Ultra-fast differential scanning calorimetry, heating at rates up to 40,000K s-1, has been used to study the crystallization of amorphous Ge2Sb2Te5 with and without sandwich layers of ZnS-SiO2. At heating rates up to 1000K s-1, the sandwich layers retard crystallization, an effect attributed to crystallization-induced stress. At greater heating rates (&gt;or = 5000K s-1), and consequently higher crystallization temperatures, the stress is relaxed, and sandwich layers catalyze crystallization. Implications for memory-device performance are discussed

    Preferred location for conducting filament formation in thin-film nano-ionic electrolyte: study of microstructure by atom-probe tomography

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    © 2017, The Author(s). Atom-probe tomography of Ag-photodoped amorphous thin-film Ge 40 S 60 , the material of interest in nano-ionic memory and lateral geometry MEMS technologies, reveals regions with two distinct compositions on a nanometer length-scale. One type of region is Ag-rich and of a size typically extending beyond the measured sample volume of ~40 × 40 × 80 nm 3 . These type-I regions contain aligned nanocolumns, ~5 nm wide, that are the likely location for reversible diffusion of Ag + ions and associated growth/dissolution of conducting filaments. The nanocolumns become relatively Ag-rich during the photodoping, and the pattern of Ag enrichment originates from the columnar-porous structure of the as-deposited film that is to some extent preserved in the electrolyte after photodoping. Type-II regions have lower Ag content, are typically 10–20 nm across, and appear to conform to the usual description of the photoreaction products of the optically-induced dissolution and diffusion of silver in a thin-film chalcogenide. The microstructure, with two types of region and aligned nanocolumns, is present in the electrolyte after photodoping without any applied bias, and is important for understanding switching mechanisms, and writing and erasing cycles, in programmable-metallization-cell memory

    Classical-nucleation-theory analysis of priming in chalcogenide phase-change memory

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    The chalcogenide Ge2Sb2Te5 (GST) is of interest for use in phase-change memory. Crystallization is the rate-limiting step for memory operation, and can be accelerated by the prior application of a “priming” heating pulse. There is characteristic fading of the priming effect if there is a time interval between the priming pulse and the main heating pulse to achieve crystallization. We apply classical nucleation theory to interpret these effects, based on a fitting of nucleation kinetics (steady-state and transient) over the full temperature range of the supercooled liquid. The input data come from both physical experiments and atomistic simulations. Prior studies of conventional glass-formers such as lithium disilicate preclude any possibility of fading; the present study shows, however, that fading can be expected with the particular thermodynamic parameters relevant for GST and, possibly, other phase-change chalcogenides. We also use the nucleation analysis to highlight the distinction between GST and the other archetypical chalcogenide system (Ag,In)-doped Sb2Te. Classical nucleation theory appears to be applicable to phase-change chalcogenides, and to predict performance consistent with that of actual memory cells. Nucleation modeling may therefore be useful in optimizing materials selection and performance in device applications.We acknowledge financial support by the World Premier International Research Center Initiative (WPI), MEXT, Japan, and from the European Research Council under the European Union's Horizon 2020 research and innovation program (grant ERC-2015-AdG-695487: ExtendGlass)

    Search for highly-ionizing particles in pp collisions at the LHC's Run-1 using the prototype MoEDAL detector

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    A search for highly electrically charged objects (HECOs) and magnetic monopoles is presented using 2.2 fb(-1) of p - p collision data taken at a centre of mass energy (E-CM) of 8 TeV by the MoEDAL detector during LHC's Run-1. The data were collected using MoEDAL's prototype Nuclear Track Detectord array and the Trapping Detector array. The results are interpreted in terms of Drell-Yan pair production of stable HECO and monopole pairs with three spin hypotheses (0, 1/2 and 1). The search provides constraints on the direct production of magnetic monopoles carrying one to four Dirac magnetic charges and with mass limits ranging from 590 GeV/c(2) to 1 TeV/c(2). Additionally, mass limits are placed on HECOs with charge in the range 10e to 180e, where e is the charge of an electron, for masses between 30 GeV/c(2) and 1 TeV/c(2).Peer reviewe

    High resolution pixel detectors for e+e- linear colliders

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    The physics goals at the future e+e- linear collider require high performance vertexing and impact parameter resolution. Two possible technologies for the vertex detector of an experimental apparatus are outlined in the paper: an evolution of the Hybrid Pixel Sensors already used in high energy physics experiments and a new detector concept based on the monolithic CMOS sensors.Comment: 8 pages, to appear on the Proceedings of the International Workshop on Linear Colliders LCWS99, Sitges (Spain), April 28 - May 5, 199
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