Design of Frequency Reconfigurable Multiband Compact Antenna using two PIN diodes for WLAN/WiMAX Applications

YesIn this paper, we present a simple reconfigurable multiband antenna with two PIN diode switches for WiMAX/WLAN applications. The antenna permits reconfigurable switching in up to ten frequency bands between 2.2 GHz and 6 GHz, with relative impedance bandwidths of around 2.5% and 8%. The proposed antenna has been simulated using CST microwave studio software and fabricated on an FR-4 substrate. It is compact, with an area of 50 × 45 mm2, and has a slotted ground substrate. Both measured and simulated return loss characteristics of the optimized antenna show that it satisfies the requirement of 2.4/5.8 GHz WLAN and 3.5 GHz WiMAX antenna applications. Moreover, there is good agreement between the measured and simulated result in terms of radiation pattern and gain.Engineering and Physical Science Research Council through Grant EP/E022936A

The Design of a Uniplanar Printed Triple Band-Rejected UWB Antenna using Particle Swarm Optimization and the Firefly Algorithm

YesA compact planar monopole antenna is proposed for ultra-wideband applications. The antenna has a microstrip line feed and band-rejected characteristics and consists of a ring patch and partial ground plane with a defective ground structure of rectangular shape. An annular strip is etched above the radiating element and two slots, one C-shaped and one arc-shaped, are embedded in the radiating patch. The proposed antenna has been optimized using bio-inspired algorithms, namely Particle Swarm Optimization and the Firefly Algorithm, based on a new software algorithm (Antenna Optimizer). Multi-objective optimization achieves rejection bands at 3.3 to 3.7 GHz for WiMAX, 5.15 to 5.825 GHz for the 802.11a WLAN system or HIPERLAN/2, and 7.25 to 7.745 GHz for C-band satellite communication systems. Validated results show wideband performance from 2.7 to 10.6 GHz with S11 ˂ -10 dB. The antenna has compact dimensions of 28 × 30 mm2. The radiation pattern is comparatively stable across the operating band with a relatively stable gain except in the notched bands.This work was supported in part by the United Kingdom Engineering and Physical Science Research Council (EPSRC) under Grant EP/E022936A, TSB UK under grant application KTP008734 and the Iraqi Ministry of Higher Education and Scientific Research

Probability Distribution of Rician K-Factor in Urban, Suburban and Rural Areas Using Real World Captured Data

YesThe Rician K-factor of the vehicle-to-vehicle (V2V) wireless propagation channel is estimated using a moment-based method on the envelope of measured pulse data. The measurements were carried out under vehicle-to-vehicle wireless communication channel condition with car rooftop antenna heights at one end of the link and very low antenna height at the other end. Data captured from typical urban, suburban and rural areas are analyzed and the K-factor probability density function is generated for each scenario to give an insight into the V2V channel behavior. For all three areas, the majority of K values are found to be within the range of -10 to +10 dB. The K-factor distributions are close to normal with mean values of 1.8, 2.6 and 3 dB respectively for urban, suburban and rural area

X-ray absorption spectroscopy study of diluted magnetic semiconductors: Zn1-xMxSe (M = Mn, Fe, Co) and Zn1-xMnxY (Y = Se, Te)

We have investigated 3d electronic states of doped transition metals in II-VI diluted magnetic semiconductors, Zn1-xMxSe (M = Mn, Fe, Co) and Zn1-xMnxY (Y = Se, Te), using the transition-metal L2,3-edge X-ray absorption spectroscopy (XAS) measurements. In order to explain the XAS spectra, we employed a tetragonal cluster model calculation, which includes not only the full ionic multiplet structure but also configuration interaction (CI). The results show that CI is essential to describe the experimental spectra adequately, indicating the strong hybridization between the transition metal 3d and the ligand p orbitals. In the study of Zn1-xMnxY (Y = Se, Te), we also found considerable spectral change in the Mn L2,3-edge XAS spectra for different ligands, confirming the importance of the hybridization effects in these materials.Comment: This paper consists of 22 pages including 4 figures. This paper is submitted to Physical Review

A 70-W Asymmetrical Doherty Power Amplifier for 5G Base Stations

YesMuch attention has been paid to making 5G developments more en-ergy efficient, especially in view of the need for using high data rates with more complex modulation schemes within a limited bandwidth. The concept of the Doherty power amplifier for improving amplifier efficiency is explained in addi-tion to a case study of a 70W asymmetrical Doherty power Amplifier using two GaN HEMTs transistors with peak power ratings of 45W and 25W. The rationale for this choice of power ratio is discussed. The designed circuit works in the 3.4GHz frequency band with 200 MHz bandwidth. Rogers RO4350B substrate with dielectric constant εr=4.66 and thickness 0.035 mm is used. The perfor-mance analysis of the Doherty power amplifier is simulated using AWR MWO software. The simulated results showed that 54-64% drain efficiency has been achieved at 8 dB back-off within the specified bandwidth with an average gain of 10.7 dB

Static and dynamic ionization levels of transition metal-doped zinc chalcogenides

Transition metal (TM) impurities in semiconductors have a considerable effect on the electronic properties and on the lattice vibrations. The unfilled d shell permits the impurity atoms to exist in a variety of charge states. In this work, the static donor and acceptor ionization energies of ZnX:M, with X = S, Se, Te and M:Sc, Ti, V, Fe, Co, Ni are obtained from first principles total energy calculations and compared with experimental results in the literature where they exist. From these results, many of the TM-doped zinc chalogenides have an amphoteric behavior. To analyze the rule of the deep gap levels in both the radiative and non-radiative processes, the dynamic ionization energies are obtained as a function of the inward and outward M–X displacements. In many cases, the changes in the mass and the force constants resulting from the substitution of an impurity center for a lattice atom are small. When the charge or the environment of the impurity changes, the electron population tend to remain compensated. As consequence, the changes in the lattice vibrational modes are small

Four-way data analysis within the linear mixed modelling framework

Cultivars have to be evaluated under different crop management systems across agro-ecosystems and years using multi-environment trials (MET) before releasing them to the market. Frequently, data collected in METs are arranged according to cultivar (G), management (M), location, (L) and year (Y) combinations in a four-way G x M x L x Y data table that is highly unbalanced for cultivars across locations and time. Therefore, we present the restricted maximum likelihood method (REML) for linear mixed models (LMM) with a factor analytic variance-covariance matrix for assessing cultivar adaptation to crop management systems and environments based on unbalanced datasets. Such a multi-environmental trial system has been in operation in Poland for winter wheat (Triticum aestivum L.) in the form of the Post-registration Variety Testing System (PVTS). This study aimed to illustrate the use of LMM in the analysis of unbalanced four-way G x M x L x Y data. LMM analysis provided adjusted means of grain yield for 51 winter wheat cultivars bred in different regions in Europe, tested across 18 trial locations and seven consecutive cropping seasons in two crop management intensities. The application of the four-way LMM with a factor analytic variance-covariance matrix is a complementary and effective tool for evaluating the unbalanced G x M x L x Y table. Cultivars tested had different adaptive responses to the Polish agro-ecosystems separately for each of the crop management intensities. Wide adaptation in both crop management systems was exhibited by cultivars Mulan and Jenga bred in Germany

Investigations of the field emission current from bismuth ceramic cathodes

In this work the investigations of the emission current from BizSrzBazCu30axn d Bi2Sr2BaCu2Ox ceramic cathodes are presented. Experiments were carried out in the vacuum chamber at pressure within the range of Tr 10-8(10-6 Pa), with DC high-voltage power supply and high-class digital electrometer. Current-voltage and Fowler-Nordheim characteristics for the cathodes superconducting in liquid nitrogen temperature were obtained for various distances between electrodes. Current vs. temperature characteristics were also measured. For some measurements the transparent anode technique was employed in order to provide informations about emission origin point. Emission current was registered for the electron emission originating from a single emission center.Superconducting state did not influence current-voltage dependences. It was observed for superconducting cathodes that emission current abruptly changes in the vicinity of the superconducting transition temperature T,. Emission current was stable and practically constant for the temperatures below T, and became unstable and noisy for the temperatures above T,. Emission current rate depends on the temperature range of the superconducting transition AT,.. Superconducting parameters of the cathodes: critical temperature T,, temperature range of the superconducting transition AT, and critical current density j, were also measured. It was found that sorbtion phenomena on the surface of cathodes during cooling and heating of the electrodes influence emission current values and play major role in the emission phenomena

Majority carrier capture cross section determination in the large deep trap concentration cases

A method to determine the thermal cross section of a deep level from capacitance measurements is reported. The results enable us to explain the nonexponential behavior of the capacitance versus capture time when the trap concentration is not negligible with respect to that of the shallow one, and the Debye tail effects are taken into account. A figure of merit for the nonexponential behavior of the capture process is shown and discussed for different situations of doping and applied bias. We have also considered the influence of the position of the trap level"s energy on the nonexponentiality of the capture transient. The experimental results are given for the gold acceptor level in silicon and for the DX center in Al0.55 Ga0.45As, which are in good agreement with the developed theory

Improvements in and Relating to Processing Apparatus & Method

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