Energy metabolism of the lactating sow : preliminary results

International audienc

Monte Carlo analysis of III–V PIN diodes for tunnel-FETs and Impact Ionization-MOSFETs

International audienc

Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

International audienceImpact-ionization metal-oxide-semiconductor FETs (I-MOSFETs) are in competition with tunnel FETs (TFETs) in order to achieve the best behaviour for low power logic circuits. Concretely, III-V I-MOSFETs are being explored as promising devices due to the proper reliability, since the impact ionization events happen away from the gate oxide, and the high cutoff frequency, due to high electron mobility. To facilitate the design process from the physical point of view, a Monte Carlo (MC) model which includes both impact ionization and band-to-band tunnel is presented. Two ungated InGaAs and InAlAs/InGaAs 100 nm PIN diodes have been simulated. In both devices, the tunnel processes are more frequent than impact ionizations, so that they are found to be appropriate for TFET structures and not for I- MOSFETs. According to our simulations, other narrow bandgap candidates for the III-V heterostructure, such as InAs or GaSb, and/or PININ structures must be considered for a correct I-MOSFET design

Persistent Photocarrier Accumulation and Depletion in LaAlO3/SrTiO3 Quantum Wells

International audienc

Improvement of interfacial and electrical properties of Al 2 O 3 / n-Ga 0.47 In 0.53 As for III-V impact ionization MOSFETs

International audienc

Fabrication Process of Non-Linear Planar Diodes Based on GaN

International audienc