1,029 research outputs found
Clean and As-covered zinc-blende GaN (001) surfaces: Novel surface structures and surfactant behavior
We have investigated clean and As-covered zinc-blende GaN (001) surfaces,
employing first-principles total-energy calculations. For clean GaN surfaces
our results reveal a novel surface structure very different from the
well-established dimer structures commonly observed on polar III-V (001)
surfaces: The energetically most stable surface is achieved by a Peierls
distortion of the truncated (1x1) surface rather than through addition or
removal of atoms. This surface exhibits a (1x4) reconstruction consisting of
linear Ga tetramers. Furthermore, we find that a submonolayer of arsenic
significantly lowers the surface energy indicating that As may be a good
surfactant. Analyzing surface energies and band structures we identify the
mechanisms which govern these unusual structures and discuss how they might
affect growth properties.Comment: 4 pages, 3 figures, to be published in Appears in Phys. Rev. Lett.
(in print). Other related publications can be found at
http://www.rz-berlin.mpg.de/th/paper.htm
ZnSe Heteroepitaxial Growth on Si (100) and GaAs (100)
The early stages of ZnSe heteroepitaxy on Si(100), Si(100):As and GaAs(100) are compared and contrasted, based on results of scanning tunneling microscopy and photoemission spectroscopy. High Se reactivity with the substrate constituents leads to bulk phase formation which is detrimental to heteroepitaxy. As-termination of Si(100) not only passivates the surface, but also provides an ideal buffer for ZnSe overgrowth. Lacking a similar buffer layer, stoichiometric control of the GaAs(100) surface is investigated to find a means for controlled heteroepitaxy
Strontium Isotope Zoning in Garnet: Implications for Metamorphic Matrix Equilibration, Geochronology and Phase Equilibrium Modelling
In principle, garnet growth rates may be calculated from 87Rb/86Sr and 87Sr/86Sr measurements in garnet subsamples and the surrounding rock matrix. Because of low Rb/Sr, garnet should passively record the matrix decay of 87Rb to 87Sr as a progressive increase in 87Sr/86Sr from core to rim. This concept was tested by collecting Rb-Sr data for five garnet grains from four major orogenic belts: eastern Vermont (c. 380 Ma), western New Hampshire (c. 320 Ma), southern Chile (c. 75 Ma) and northwestern Italy (c. 35 Ma). Both normal Sr isotope zoning (increasing 87Sr/86Sr from core to rim) and inverse Sr zoning (decreasing 87Sr/86Sr from core to rim) were observed. Garnet and matrix isotope data commonly yielded grossly inaccurate model ages. Incomplete Rb and Sr equilibration among matrix minerals is invoked to explain the deviations between theoretical v. measured zoning patterns and the age disparities. Initially, the reactive matrix is dominated by rapidly equilibrating Rb-rich mica, which imparts high 87Sr/86Sr values in garnet cores. Progressive participation of slower equilibrating Sr-rich plagioclase buffers or even reduces 87Sr/86Sr, possibly leading to flat or decreasing 87Sr/86Sr from garnet cores to rims. Unusually high 87Sr/86Sr in garnet in combination with bulk matrix compositions causes erroneously young apparent ages, so metamorphic ages, growth rates, and associated heating and loading rates are likely suspect. Although Rb-Sr may be the most susceptible because of the profound disparities between mica and feldspar, zircon reactivity might influence the Lu-Hf system by up to a few per cent. The Sm-Nd system seems generally immune to these effects. Pseudosection analysis and conventional garnet geochronology, which presume complete matrix equilibration during metamorphism, may require modification to account for differences between whole-rock v. reactive matrix compositions
Hydrophobic interactions: an overview
We present an overview of the recent progress that has been made in
understanding the origin of hydrophobic interactions. We discuss the different
character of the solvation behavior of apolar solutes at small and large length
scales. We emphasize that the crossover in the solvation behavior arises from a
collective effect, which means that implicit solvent models should be used with
care. We then discuss a recently developed explicit solvent model, in which the
solvent is not described at the atomic level, but rather at the level of a
density field. The model is based upon a lattice-gas model, which describes
density fluctuations in the solvent at large length scales, and a Gaussian
model, which describes density fluctuations at smaller length scales. By
integrating out the small length scale field, a Hamiltonian is obtained, which
is a function of the binary, large-length scale field only. This makes it
possible to simulate much larger systems than hitherto possible as demonstrated
by the application of the model to the collapse of an ideal hydrophobic
polymer. The results show that the collapse is dominated by the dynamics of the
solvent, in particular the formation of a vapor bubble of critical size.
Implications of these findings to the understanding of pressure denaturation of
proteins are discussed.Comment: 10 pages, 4 figure
Factors associated with anaemia status and haemoglobin concentrations in infants 6-11 months in Mbala District, Northern Province, Zambia
This paper presents information on the factors associated with anaemia status and haemoglobin concentrations in infants 6-11 months old in Mbala District, Northern Province, Zambia. The information is drawn from the baseline data collection of a study involving 631 caregiver-child pairs. The data presented here includes anthropometry, malaria parasitism, concentrations of haemoglobin (Hb) and serum transferrin receptor (STfR), and information on household characteristics, infant and young child feeding (IYCF) practices, and morbidity, gathered via questionnaire. It was found that 57% of the sample was anaemic (Hb < 110 g/L), 93% was iron deficient (STfR > 8.3 mg/L) and 53% had iron deficiency anaemia. Overall, 30% of the infants in the sample were stunted, 2% were wasted, and 16% were underweight, and 22%, 56% and 18% of infants were meeting minimum dietary diversity, minimum meal frequency, and minimum acceptable diet, respectively, and 28% consumed iron rich foods in the previous 24 hours. Infants who had achieved a minimum dietary diversity score (OR = 0.44; 95% CI: 0.30-0.65), who had consumed iron rich foods in the previous 24 hours (OR = 0.56; 95% CI: 0.40-0.80), or were female (OR = 0.69; 95% CI: 0.50-0.94), had significantly lower risks of being anaemic. Infants that tested positive for malaria parasitism (OR = 4.33; 95% CI: 2.16- 8.70), as well as those having a fever (OR = 1.88; 95% CI: 1.36-2.59) in the previous two weeks had significantly greater odds of being anaemic. Despite these associations, whether or not a child slept under a mosquito net was not related to their risk of being anaemic. Infants in households that treated their water to make it safer to consume had average haemoglobin concentrations 3 g/L higher than those who did not (p = 0.021), but this did not translate into a significant difference in the odds of being anaemic. These results shed light on the specific causes of anaemia in the Zambian context, and illustrate the importance of improving dietary quality, specifically the intake of iron, and reducing the prevalence of diseases including malaria in order to reduce the prevalence of anaemia.Keywords: Nutritional status, Zambia, anaemia, iron deficiency, malaria, serum transferrin receptor, haemoglobi
Why is the bandwidth of sodium observed to be narrower in photoemission experiments?
The experimentally predicted narrowing in the bandwidth of sodium is
interpreted in terms of the non-local self-energy effect on quasi-particle
energies of the electron liquid. The calculated self-energy correction is a
monotonically increasing function of the wavenumber variable. The usual
analysis of photo-emission experiments assumes the final state energies on the
nearly-free-electron-like model and hence it incorrectly ascribes the non-local
self-energy correction to the final state energies to the occupied state
energies, thus leading to a seeming narrowing in the bandwidth.Comment: 9 page
Structure analysis of the Ga-stabilized GaAs(001)-c(8x2) surface at high temperatures
Structure of the Ga-stabilized GaAs(001)-c(8x2) surface has been studied
using rocking-curve analysis of reflection high-energy electron diffraction
(RHEED). The c(8x2) structure emerges at temperatures higher than 600C, but is
unstable with respect to the change to the (2x6)/(3x6) structure at lower
temperatures. Our RHEED rocking-curve analysis at high temperatures revealed
that the c(8x2) surface has the structure which is basically the same as that
recently proposed by Kumpf et al. [Phys. Rev. Lett. 86, 3586 (2001)]. We found
that the surface atomic configurations are locally fluctuated at high
temperatures without disturbing the c(8x2) periodicity.Comment: 14 pages, 4 figures, 1 tabl
Surface energy and stability of stress-driven discommensurate surface structures
A method is presented to obtain {\it ab initio} upper and lower bounds to
surface energies of stress-driven discommensurate surface structures, possibly
non-periodic or exhibiting very large unit cells. The instability of the
stressed, commensurate parent of the discommensurate structure sets an upper
bound to its surface energy; a lower bound is defined by the surface energy of
an ideally commensurate but laterally strained hypothetical surface system. The
surface energies of the phases of the Si(111):Ga and Ge(111):Ga systems and the
energies of the discommensurations are determined within eV.Comment: 4 pages RevTeX. 2 Figures not included. Ask for a hard copy (through
regular mail) to [email protected]
Macroscopic polarization and band offsets at nitride heterojunctions
Ab initio electronic structure studies of prototypical polar interfaces of
wurtzite III-V nitrides show that large uniform electric fields exist in
epitaxial nitride overlayers, due to the discontinuity across the interface of
the macroscopic polarization of the constituent materials. Polarization fields
forbid a standard evaluation of band offsets and formation energies: using new
techniques, we find a large forward-backward asymmetry of the offset (0.2 eV
for AlN/GaN (0001), 0.85 eV for GaN/AlN (0001)), and tiny interface formation
energies.Comment: RevTeX 4 pages, 2 figure
Anomalous relaxations and chemical trends at III-V nitride non-polar surfaces
Relaxations at nonpolar surfaces of III-V compounds result from a competition
between dehybridization and charge transfer. First principles calculations for
the (110) and (100) faces of zincblende and wurtzite AlN, GaN and InN
reveal an anomalous behavior as compared with ordinary III-V semiconductors.
Additional calculations for GaAs and ZnO suggest close analogies with the
latter. We interpret our results in terms of the larger ionicity (charge
asymmetry) and bonding strength (cohesive energy) in the nitrides with respect
to other III-V compounds, both essentially due to the strong valence potential
and absence of core states in the lighter anion. The same interpretation
applies to Zn II-VI compounds.Comment: RevTeX 7 pages, 8 figures included; also available at
http://kalix.dsf.unica.it/preprints/; improved after revie
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