Structure of PEP-PEO block copolymer micelles: Exploiting the complementarity of small-angle X-ray scattering and static light scattering

The structure of large block copolymer micelles is traditionally determined by small-angle neutron scattering (SANS), covering a large range of scattering vectors and employing contrast variation to determine the overall micelle morphology as well as the internal structure on shorter length scales. The present work shows that the same information can be obtained by combining static light scattering (SLS) and small-angle X-ray scattering (SAXS), which provide information on, respectively, large and short length scales. Micelles of a series of block copolymers of poly(ethylene propylene)-b-poly(ethylene oxide) (PEP–PEO) in a 70% ethanol solution are investigated. The polymers have identical PEP blocks of 5.0 kDa and varying PEO blocks of 2.8–49 kDa. The SLS contrasts of PEP and PEO are similar, providing a homogeneous contrast, making SLS ideal for determining the overall micelle morphology. The SAXS contrasts of the two components are very different, allowing for resolution of the internal micelle structure. A core–shell model with a PEP core and PEO corona is fitted simultaneously to the SAXS and SLS data using the different contrasts of the two blocks for each technique. With increasing PEO molecular weight, a transition from cylindrical to spherical micelles is observed. This transition cannot be identified from the SAXS data alone, but only from the SLS data.</jats:p

Sub-bandgap spectral photo-response analysis of Ti supersaturated Si

We have analyzed the increase of the sheet conductance (ΔG□) under spectral illumination in high dose Ti implanted Si samples subsequently processed by pulsed-laser melting. Samples with Ti concentration clearly above the insulator-metal transition limit show a remarkably high ΔG□, even higher than that measured in a silicon reference sample. This increase in the ΔG□ magnitude is contrary to the classic understanding of recombination centers action and supports the lifetime recovery predicted for concentrations of deep levels above the insulator-metal transition

Scaf1 promotes respiratory supercomplexes and metabolic efficiency in zebrafish

The oxidative phosphorylation (OXPHOS) system is a dynamic system in which the respiratory complexes coexist with superassembled quaternary structures called supercomplexes (SCs). The physiological role of SCs is still disputed. Here, we used zebrafish to study the relevance of respiratory SCs. We combined immunodetection analysis and deep data-independent proteomics to characterize these structures and found similar SCs to those described in mice, as well as novel SCs including III2 + IV2, I + IV, and I + III2 + IV2. To study the physiological role of SCs, we generated two null allele zebrafish lines for supercomplex assembly factor 1 (scaf1). scaf1 / fish displayed altered OXPHOS activity due to the disrupted interaction of complexes III and IV. scaf1 / fish were smaller in size and showed abnormal fat deposition and decreased female fertility. These physiological phenotypes were rescued by doubling the food supply, which correlated with improved bioenergetics and alterations in the metabolic gene expression program. These results reveal that SC assembly by Scaf1 modulates OXPHOS efficiency and allows the optimization of metabolic resources.Microscopy Imaging Center of the University of BernSpanish Ministry of Economy and Competitiveness, MINECO SAF2015-65633-RSpanish Ministry of Economy and Competitiveness, MINECO SAF2015-65633-RHuman Frontier Science Program RGP0016/2018European Research Council (ERC) 337703SNF 31003A-159721Swiss National Science Foundation (SNSF) 320030_170062MINECO BIO2015-67580-PCarlos III Institute of Health-Fondo de Investigacion Sanitaria) PRB3 IPT17/0019Fundacion La Marato TV3La Caixa Foundation HR17-00247Ministry of Economy, Industry and Competitiveness (MEIC)Pro-CNIC FoundationSevero Ochoa Center of Excellence (MEIC award) SEV-2015-050

On the properties of GaP supersaturated with Ti

We have fabricated GaP supersaturated with Ti by means of ion implantation and pulsed-laser melting to obtain an intermediate band material with applications in photovoltaics. This material has a strong sheet photoconductance at energies below the bandgap of GaP and it seems to be passivated by a Ga defective GaPO oxide layer during the laser process. Passivation is consistently analyzed by sheet photoconductance and photoluminescence measurements. We report on the structural quality of the resulting layers and analyze the energy of the new optical transitions measured on GaP:Ti. A collapse found in the sheet photoconductance spectra of GaP:Ti samples fabricated on undoped substrates is explained by the negative photoconductivity phenomenon. (C) 2019 Elsevier B.V. All rights reserved

Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si

In this study, we present a structural and optoelectronic characterization of high dose Ti implanted Si subsequently pulsed-laser melted (Ti supersaturated Si). Time-of-flight secondary ion mass spectrometry analysis reveals that the theoretical Mott limit has been surpassed after the laser process and transmission electron microscopy images show a good lattice reconstruction. Optical characterization shows strong sub-band gap absorption related to the high Ti concentration. Photoconductivity measurements show that Ti supersaturated Si presents spectral response orders of magnitude higher than unimplanted Si at energies below the band gap. We conclude that the observed below band gap photoconductivity cannot be attributed to structural defects produced by the fabrication processes and suggest that both absorption coefficient of the new material and lifetime of photoexcited carriers have been enhanced due to the presence of a high Ti concentration. This remarkable result proves that Ti supersaturated Si is a promising material for both infrared detectors and high efficiency photovoltaic devices

Limitations of high pressure sputtering for amorphous silicon deposition

Amorphous silicon thin films were deposited using the high pressure sputtering (HPS) technique to study the influence of deposition parameters on film composition, presence of impurities, atomic bonding characteristics and optical properties. An optical emission spectroscopy (OES) system has been used to identify the different species present in the plasma in order to obtain appropriate conditions to deposit high purity films. Composition measurements in agreement with the OES information showed impurities which critically depend on the deposition rate and on the gas pressure. We prove that films deposited at the highest RF power and 3.4 × 10^−2 mbar, exhibit properties as good as the ones of the films deposited by other more standard techniques

Role of Mitochondrial Complex IV in Age-Dependent Obesity

Aging is associated with progressive white adipose tissue (WAT) enlargement initiated early in life, but the molecular mechanisms involved remain unknown. Here we show that mitochondrial complex IV (CIV) activity and assembly are already repressed in white adipocytes of middle-aged mice and involve a HIF1A-dependent decline of essential CIV components such as COX5B. At the molecular level, HIF1A binds to the Cox5b proximal promoter and represses its expression. Silencing of Cox5b decreased fatty acid oxidation and promoted intracellular lipid accumulation. Moreover, local in vivo Cox5b silencing in WAT of young mice increased the size of adipocytes, whereas restoration of COX5B expression in aging mice counteracted adipocyte enlargement. An age-dependent reduction in COX5B gene expression was also found in human visceral adipose tissue. Collectively, our findings establish a pivotal role for CIV dysfunction in progressive white adipocyte enlargement during aging, which can be restored to alleviate age-dependent WAT expansion

Inversion charge study in TMO hole-selective contact-based solar cells

© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.In this article, we study the effect of the inversion charge ( Q inv ) in a solar cell based on the hole-selective characteristic of substoichiometric molybdenum oxide (MoO x ) and vanadium oxide (VO x ) deposited directly on n-type silicon. We measure the capacitance–voltage ( C – V ) curves of the solar cells at different frequencies and explain the results taking into account the variation of the space charge and the existence of Q inv in the c-Si inverted region. The high-frequency capacitance measurements follow the Schottky metal–semiconductor theory, pointing to a low inversion charge influence in these measurements. However, for frequencies lower than 20 kHz, an increase in the capacitance is observed, which we relate to the contribution of the inversion charge. In addition, applying the metal–semiconductor theory to the high-frequency measurements, we have obtained the built-in voltage potential and show new evidence about the nature of the conduction process in this structure. This article provides a better understanding of the transition metal oxide/n-type crystalline silicon heterocontact.The authors would like to acknowledge the CAI de Técnicas Físicas of the Universidad Complutense de Madrid. The authors would also like to thank the Mexican grants program CONACyT for its financial collaboration.Peer ReviewedPostprint (author's final draft