SOLUBILITY LIMIT OF DOPANTS IN SILICON IRRADIATED BY RUBY LASER

The solubility of several dopants (Sb, Ga, Bi, In) in laser treated silicon has been investigated. The dopants were introduced by vacuum deposition followed by a ruby laser irradiation. Their solubility was determined by Rutherford backscattering spectrometry measurements in channeling and random conditions. In all cases a solubility limit Cmℓ higher than the equilibrium solubility was found and a simple correlation with the equilibrium distribution coefficient kO could be established : Cmℓ = 8.6 × 1021 k0.51O cm-3

Risiko-Chancen-Analyse mit Value at Risk bei Investitionsentscheidungen

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Lineare Programmierung mit What's Best

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Wissensnetzwerk Controlling:Ein Referenzprojekt zur Gestaltung verteilter Lehr- und Lernumgebungen

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Kinetische Grafiken

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Roughness and multiscaling of planar crack fronts

We consider numerically the roughness of a planar crack front within the long-range elastic string model, with a tunable disorder correlation length $\xi$. The problem is shown to have two important length scales, $\xi$ and the Larkin length $L_c$. Multiscaling of the crack front is observed for scales below $\xi$, provided that the disorder is strong enough. The asymptotic scaling with a roughness exponent $\zeta \approx 0.39$ is recovered for scales larger than both $\xi$ and $L_c$. If $L_c > \xi$, these regimes are separated by a third regime characterized by the Larkin exponent $\zeta_L \approx 0.5$. We discuss the experimental implications of our results.Comment: 8 pages, two figure