SOLUBILITY LIMIT OF DOPANTS IN SILICON IRRADIATED BY RUBY LASER

Abstract

The solubility of several dopants (Sb, Ga, Bi, In) in laser treated silicon has been investigated. The dopants were introduced by vacuum deposition followed by a ruby laser irradiation. Their solubility was determined by Rutherford backscattering spectrometry measurements in channeling and random conditions. In all cases a solubility limit Cmℓ higher than the equilibrium solubility was found and a simple correlation with the equilibrium distribution coefficient kO could be established : Cmℓ = 8.6 × 1021 k0.51O cm-3