15 research outputs found
Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling
No full textInternational audienc
Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling
No full textInternational audienc
Bartonian orthophragminids from the Fulra Limestone (Kutch, W India) and coeval units in Sulaiman Range, Pakistan: a synthesis of shallow benthic zone (SBZ) 17 for the Indian Subcontinent
No full text3DVLSI with CoolCube process: An alternative path to scaling
No full textsession 5: 3D Systems and PackagingInternational audience3D VLSI with a CoolCubeâą integration allows vertically stacking several layers of devices with a unique connecting via density above a million/mm 2 . This results in increased density with no extra cost associated to transistor scaling, while benefiting from gains in power and performance thanks to wire-length reduction. CoolCubeâą technology leads to high performance top transistors with Thermal Budgets (TB) compatible with bottom MOSFET integrity. Key enablers are the dopant activation by Solid Phase Epitaxy (SPE) or nanosecond laser anneal, low temperature epitaxy, low k spacers and direct bonding. New data on the maximal TB bottom MOSFET can withstand (with high temperatures but short durations) offer new opportunities for top MOSFET process optimization
Early Eocene orthophragminids (Foraminifera) from the type-locality of Discocyclina ranikotensis
No full textHolothuroidea: new records from the Lower Cretaceous of the Agrio Formation, Neuquén Basin, Argentina. An integrated study with foraminifers and calcareous nannofossils
No full textThe fossil aardvark Amphiorycteropus gaudryi (Forsyth Major, 1888) from the late Miocene of Kerassia (Euboea, Greece)
No full text
