Epitaxial Growth of Boron Carbide on 4H-SiC

In this work, the successful heteroepitaxial growth of boron carbide (B x C) on 4HSiC(0001) 4{\textdegree} off substrate using chemical vapor deposition (CVD) is reported. Towards this end, a two-step procedure was developed, involving the 4H-SiC substrate boridation under BCl 3 precursor at 1200{\textdegree}C, followed by conventional CVD under BCl 3 + C 3 H 8 at 1600{\textdegree}C. Such a procedure allowed obtaining reproducibly monocrystalline (0001) oriented films of B x C with a step flow morphology at a growth rate of 1.9 $\mu$m/h. Without the boridation step, the layers are systematically polycrystalline. The study of the epitaxial growth mechanism shows that a monocrystalline B x C layer is formed after boridation but covered with a B-and Si-containing amorphous layer. Upon heating up to 1600{\textdegree}C, under pure H 2 atmosphere, the amorphous layer was converted into epitaxial B x C and transient surface SiB x and Si crystallites. These crystallites disappear upon CVD growth

Epitaxial Growth of Boron Carbide on 4H-SiC

In this work, the successful heteroepitaxial growth of boron carbide (BxC) on 4H-SiC(0001) 4° off substrate using chemical vapor deposition (CVD) is reported. Towards this end, a two-step procedure was developed, involving the 4H-SiC substrate boridation under BCl3 precursor at 1200°C, followed by conventional CVD under BCl3 + C3H8 at 1600°C. Such a procedure allowed obtaining reproducibly monocrystalline (0001) oriented films of BxC with a step flow morphology at a growth rate of 1.9 µm/h. Without the boridation step, the layers are systematically polycrystalline. The study of the epitaxial growth mechanism shows that a monocrystalline BxC layer is formed after boridation but covered with a B- and Si-containing amorphous layer. Upon heating up to 1600°C, under pure H2 atmosphere, the amorphous layer was converted into epitaxial BxC and transient surface SiBx and Si crystallites. These crystallites disappear upon CVD growth

Probing structural and electronic properties of h-BN by HRTEM and STM

International audienceAfter the discovery of graphene and its consequences in the field of nanoscience and nanomaterials, there has been a growing interest in 2D materials and also their vertical stacking due to unique properties and potential applications.[1] For instance, it was shown the transport properties of exfoliated graphene supported by hexagonal boron nitride (h-BN) could approach the intrinsic graphene limits.[2] Nevertheless, studying the structural properties of 2D materials and 2D heterostructures is crucial to understand their physical and chemical properties. Our motivations have been to exploit state of the art aberration-corrected high resolution transmission electron microscopy (HRTEM) and scanning tunneling microscopy (STM) to study the structure and electronic properties of graphene (G), h-BN and G/h-BN heterostructures. HRTEM analyses were conducted with a JEOL ARM microscope equipped together with a cold FEG, an aberration corrector for the objective lens and a One view camera (Gatan). Notably, we used high-speed atomic-scale imaging to study with unprecedented dynamics (up to 25 fps) the nucleation and growth mechanisms of triangular holes in h-BN under beam irradiation (Figure 1). The direct observation of B and N atom sputtering and surface reconstruction processes allow understanding how the triangular shape and orientation of holes are maintained during the growth. Interestingly, by studying the effects of the electron dose and the number of BN layers, we demonstrate that these atomic-scale processes are simultaneously driven by kinetic and thermodynamic effects. Further works are in progress to study the stability of h-BN/G stacking under electron-beam irradiation. STM analyses were carried out with low temperature STM at 4 K, on 2D heterostructures that consist in a few layers of graphene doped with nitrogen on thick exfoliated flakes of BN deposited on SiO 2. Remarkably, we show that STM allows identifying and characterizing ionization defects within the BN flakes below the graphene layers (Figure 2). This study opens new avenues to probe the electronic interactions between this two stacked materials

In-situ monitoring the structural pathway of a Ti-based alloy from metallic liquid to metallic glass

A metallic glass is formed when a molten metallic alloy is cooled rapidly enough that crystallisation is avoided. However, the way the atomic structure of the liquid converts to that of the glass is generally unknown. The main challenge is the sufficiently fast experimental acquisition of structural data in the undercooled liquid regime necessitated by the high cooling rates needed to avoid crystallisation. In the present study, using aerodynamic levitation, the Ni-free Ti-based alloy Ti40Zr10Cu34Pd14Sn2 was vitrified in-situ in a high-energy synchrotron X-ray beam while diffraction data were acquired during cooling from above the liquidus temperature Tliq to well below the glass-transition temperature Tg. The structure in the undercooled liquid regime shows an accelerated evolution. Both the local order in the short (SRO) and medium range (MRO) increases rapidly as the undercooled liquid approaches Tg, below which the amorphous structure “freezes”. Nevertheless, distinct differences between the evolution of SRO and MRO were observed. The structural rearrangements in the undercooled liquid are found to be correlated with a rapid increase in viscosity of the metallic liquid upon cooling. The new findings shed light on the evolution of the atomic structure of metallic liquids during vitrification and the structural origins of the sluggish kinetics that suppress nucleation and growth of crystalline phases.Financial support by the ‘‘BioTiNet’’ EU Initial Training Network (ITN) (Grant agreement ID: 264635), the JSPS KAKENHI (Grant Number: 15K18201) as well as the EPSRC-DTP studentship “Bulk Metallic Glasses: Revealing the Structural Pathway of Liquid Metals to Vitrification” (project reference 2043971) within the framework of the EPSRC Doctoral Training Partnership with Cranfield University (EP/N509450/1) is gratefully acknowledged. MES thankfully acknowledges the support by a Cranfield University 75th Anniversary Research Fellowship.Journal of Alloys and Compound

Epitope-engineered human hematopoietic stem cells are shielded from CD123-targeted immunotherapy

Targeted eradication of transformed or otherwise dysregulated cells using monoclonal antibodies (mAb), antibody-drug conjugates (ADC), T cell engagers (TCE), or chimeric antigen receptor (CAR) cells is very effective for hematologic diseases. Unlike the breakthrough progress achieved for B cell malignancies, there is a pressing need to find suitable antigens for myeloid malignancies. CD123, the interleukin-3 (IL-3) receptor alpha-chain, is highly expressed in various hematological malignancies, including acute myeloid leukemia (AML). However, shared CD123 expression on healthy hematopoietic stem and progenitor cells (HSPCs) bears the risk for myelotoxicity. We demonstrate that epitope-engineered HSPCs were shielded from CD123-targeted immunotherapy but remained functional, while CD123-deficient HSPCs displayed a competitive disadvantage. Transplantation of genome-edited HSPCs could enable tumor-selective targeted immunotherapy while rebuilding a fully functional hematopoietic system. We envision that this approach is broadly applicable to other targets and cells, could render hitherto undruggable targets accessible to immunotherapy, and will allow continued posttransplant therapy, for instance, to treat minimal residual disease (MRD)

Modélisation hydrologique spatialisée des crues d'un bassin versant agricole:Application à l'étude du rôle du réseau de fossés sur le bassin de Roujan.

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