Photoluminescence Study Of Interfaces Between Heavily Doped Al 0.48in 0.52as:si Layers And Inp (fe) Substrates

Properties of the interface between the epitaxial layer of heavily doped Al 0.48In 0.52As:Si and the InP(Fe) substrate are investigated by photoluminescence in AlInAs:Si/InP(Fe) heteroestructures grown by molecular beam epitaxy. The effect on heterostructure optical properties of including a thin Al 0.22Ga 0.26In 0.52As:Si layer at the interface is investigated as well. To explain the different interface emission energies observed, the results are analyzed by using the mixed-type I-II interface model, which considers in the type II interface a narrow InAs well, with variable width, between AlInAs and InP. The observation of the interface emission at energies as high as 1.36 eV, at low excitation intensity, is explained taking into account the high doping level of the samples. The observed interface transition luminescence thermal quenching is tentatively explained by analyzing the spatial distribution of electrons in the triangular quantum well formed at the type II interface (or at the mixed I-II interface) as a function of the temperature. © 2002 American Institute of Physics.911189999004Sacilotti, M., Motisuke, F., Monteil, Y., Abraham, P., Iikawa, F., Montes, C., Furtado, M., Waldman, B., (1992) J. Cryst. Growth, 124, p. 589. , jcr JCRGAE 0022-0248Quillec, M., (1991) Proc. SPIE, 1361, p. 34. , spi PSISDG 0277-786XLaureto, E., Dias, I.F.L., Duarte, J.L., Di Mauro, E., Iwamoto, H., Freitas, M.T.P., Lourenço, S.A., Harmand, J.C., (1999) J. Appl. Phys., 85, p. 1. , jaJAPIAU 0021-8979Mondry, M.J., Babic, D.I., Bowers, J.E., Coldren, L.A., (1992) IEEE Photonics Technol. Lett., 4, p. 627. , ptl IPTLEL 1041-1135Bhat, R., Koza, M., Kash, K., Allen, S., Hong, W., Schwartz, S., Chang, G., Lin, P., (1991) J. Cryst. 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GaNAsSb : How does it compare with other dilute III-V nitride alloys ?

International audienceGrowth and properties of GaNAsSb alloys are investigated and compared with those of other dilute III-N-V alloys. Similar properties are observed including very high bandgap bowing, carrier localization at low temperature, sensitivity to thermal annealing and passivation of N-related electronic states by hydrogen. On the other hand, we point out some features of this alloy system and evaluate its potential for device applications. Probably, GaNAsSb can achieve emission at longer wavelengths than GaInNAs alloys grown to date. Its conduction- and valence-band offsets can be independently tuned by adjusting the N and Sb composition, respectively. Since this compound has a single group III element, its electronic structure should be less dependent on alloy configuration than GaInNAs

Hot Electrons In Delta-doped Gaas(si) Layers

Low temperature (2K) photoluminescence measurements have been performed in delta-doped GaAs(Si) layers, with carrier sheet concentrations Ns ranging from 1012 to 1013cm-2. Under the same excitation intensity, the luminescence spectra of all samples show a high energy tail which becomes more pronounced as Ns increases. Well defined electron temperatures, higher than the lattice temperature, are obtained, characterizing the electron heating effect in this system. The architecture of the delta-doping allows to observe hot electrons even at relatively low laser pumping intensities. © 1990.759707710Shah, Leite, (1969) Phys. Rev. Lett., 22, p. 1304Shah, (1978) Solid State Electron., 21, p. 43Meneses, Jannuzzi, Leite, (1973) Solid State Commun., 13, p. 245Shah, (1989) Superlattices and Microstructures, 6, p. 293. , See for example, and references thereinShah, Pinczuk, Gossard, Wiegmann, (1985) Phys. Rev. Lett., 54, p. 2045Kash, Shah, Block, Gossard, Wiegmann, (1985) Physica, 134 B, p. 189Yang, Carlson-Swindle, Lyon, Worlock, (1985) Phys. Rev. Lett., 55, p. 2359Tatham, Taylor, Ryan, Wang, Foxon, (1988) Solid State Electron., 31, p. 459Oberli̧, Wake, Klein, Henderson, Morkoç, Intersubband relaxation of photoexcited hot carriers in quantum wells (1988) Solid-State Electronics, 31, p. 413Leo, Rühle, Ploog, (1988) Phys. Rev. B, 38, p. 1947Ploog, Hauser, Fischer, Fundamental studies and device application of ?-doping in GaAs Layers and in AlxGa1?xAs/GaAs heterostructures (1988) Applied Physics A Solids and Surfaces, 45 A, p. 233Eisele, (1989) Superlattices and Microstructures, 6, p. 123Zrenner, Reisinger, Koch, Ploog, (1985) Proc. 17th Intern. Conf. on the Physics of Semiconductors, p. 325. , J.P. Chadi, W.A. Harrison, San Francisco, 1984, Springer, New YorkZrenner, Koch, Ploog, (1988) Surf. Sci., 196, p. 671Perry, Lee, Zhou, Worlock, Zrenner, Koch, Ploog, (1988) Surf. Sci., 196, p. 677Schwarz, Müller, Tempel, Koch, Weimann, (1989) Semicond. Sci. Technol., 4, p. 571Scolfaro, Mendonça, Meneses, Martins, Leite, (1990) Int. J. Quant. Chem., , accepted for publication i

Band-edge Modifications Due To Photogenerated Carriers In Single P-type δ-doped Gaas Layers

The photogenerated carrier-induced band-edge modifications of beryllium single δ-doped GaAs layers comprising a two-dimensional hole gas (2DHG) were investigated by means of photoluminescence, selective photoluminescence, and photoluminescence excitation spectroscopies. The results show direct evidence for a photoinduced electron confinement effect, which strongly enhances the radiative-recombination probability between electrons and holes of the 2DHG at low temperatures. © 1999 The American Physical Society.59746344637Schubert, E.F., (1994) Epitaxial Microstructures, 40, p. 1. , edited by A. C. Gossard, Semiconductors and Semimetals Academic, New YorkEnderlein, R., Sipahi, G.M., Scolfaro, L.M.R., Leite, J.R., Diaz, I.F.L., (1994) Mater. Sci. Eng., B, 35, p. 396Sipahi, G.M., Enderlein, R., Scolfaro, L.M.R., Leite, J.R., (1996) Phys. Rev. B, 53, p. 9930Buyanova, I.A., Chen, W.M., Henry, A., Ni, W.-X., Hansson, G.V., Monemar, B., (1996) Phys. Rev. B, 53, p. 9587Sipahi, G.M., Enderlein, R., Scolfaro, L.M.R., Leite, J.R., Da Silva, E.C.F., Levine, A., (1998) Phys. Rev. B, 57, p. 9168Gilinsky, A.M., Zhuravlev, K.S., Lubyshev, D.I., Migal, V.P., Preobrashenskii, V.V., Semiagin, B.R., (1991) Superlattices Microstruct., 10, p. 399Estimated from Hall measurements on molecular beam epitaxy grown bulk GaAsAshen, D.J., Dean, P.J., Hurle, D.T.J., Mullin, J.B., White, A.M., Greene, P.D., (1975) J. Phys. Chem. Solids, 36, p. 1041Richards, D., Wagner, J., Schneider, H., Hendorfer, G., Maier, M., Fischer, A., Ploog, K., (1993) Phys. Rev. B, 47, p. 962