Dynamics of nearly spherical vesicles in an external flow

We analytically derive an equation describing vesicle evolution in a fluid where some stationary flow is excited regarding that the vesicle shape is close to a sphere. A character of the evolution is governed by two dimensionless parameters, $S$ and $\Lambda$, depending on the vesicle excess area, viscosity contrast, membrane viscosity, strength of the flow, bending module, and ratio of the elongation and rotation components of the flow. We establish the ``phase diagram'' of the system on the $S-\Lambda$ plane: we find curves corresponding to the tank-treading to tumbling transition (described by the saddle-node bifurcation) and to the tank-treading to trembling transition (described by the Hopf bifurcation).Comment: 4 pages, 1 figur

Triple galaxies and a hidden mass problem

The authors consider a homogeneous sample of 84 triple systems of galaxies with components brighter than m = 15.7, located in the northern sky and satisfying an isolation criterion with respect to neighboring galaxies in projection. The distributions of basic dynamical parameters for triplets have median values as follows: radial velocity dispersion 133 km/s, mean harmonic radius 63 kpc, absolute magnitude of galaxies M sub B equals -20.38, crossing time tau = 0.04 H(sup minus 1). For different ways of estimation the median mass-to-luminosity ratio is (20 - 30). A comparison of the last value with the ones for single and binary galaxies shows the presence of a virial mass excess for triplets by a factor 4. The mass-to-luminosity ratio is practically uncorrelated with linear size of triplets or with morphological types of their components. We note that a significant part of the virial excess may be explained by the presence of nonisolated triple configurations in the sample, which are produced by debris of more populous groups of galaxies

The probability distribution of the number of electron-positron pairs produced in a uniform electric field

The probability-generating function of the number of electron-positron pairs produced in a uniform electric field is constructed. The mean and variance of the numbers of pairs are calculated, and analytical expressions for the probability of low numbers of electron-positron pairs are given. A recursive formula is derived for evaluating the probability of any number of pairs. In electric fields of supercritical strength |eE| > \pi m^2/ \ln 2, where e is the electron charge, E is the electric field, and m is the electron mass, a branch-point singularity of the probability-generating function penetrates the unit circle |z| = 1, which leads to the asymptotic divergence of the cumulative probability. This divergence indicates a failure of the continuum limit approximation. In the continuum limit and for any field strength, the positive definiteness of the probability is violated in the tail of the distribution. Analyticity, convergence, and positive definiteness are restored upon the summation over discrete levels of electrons in the normalization volume. Numerical examples illustrating the field strength dependence of the asymptotic behavior of the probability distribution are presented.Comment: 7 pages, REVTeX, 4 figures; new references added; a short version of this e-print has appeared in PR

Auxiliary Basis Sets for Grid-Free Density Functional Theory

Density functional theory(DFT) has gained popularity because it can frequently give accurate energies and geometries. The evaluation of DFT integrals in a fully analytical manner is generally impossible; thus, most implementations use numerical quadrature over grid points. The grid-free approaches were developed as a viable alternative based upon the resolution of the identity (RI). Of particular concern is the convergence of the RI with respect to basis set in the grid-free approach. Conventional atomic basis sets are inadequate for fitting the RI, particularly for gradient corrected functionals [J. Chem. Phys. 108, 9959 (1998)]. The focus of this work is on implementation of and selection of auxiliary basis sets. Auxiliary basis sets of varying sizes are studied and those with sufficient flexibility are found to adequately represent the RI

Strong light-matter coupling: parametric interactions in a cavity and free-space

We consider parametric interactions of laser pulses in a coherent macroscopic ensemble of resonant atoms, which are possible in the strong coupling regime of light-matter interaction. The spectrum condensation (lasing at collective vacuum Rabi sidebands) was studied in an active cavity configuration. Parametric interactions under the strong light-matter coupling were proved even in free space. In contrast to bichromatic beats in a cavity, they were shown to appear due to interference between polaritonic wave packets of different group velocities.Comment: 4 pages, 2 figure

High-throughput synthesis of thermoelectric Ca3_3Co4_4O9_9 films

Properties of complex oxide thin films can be tuned over a range of values as a function of mismatch, composition, orientation, and structure. Here, we report a strategy for growing structured epitaxial thermoelectric thin films leading to improved Seebeck coefficient. Instead of using single-crystal sapphire substrates to support epitaxial growth, Ca$_3$Co$_4$O$_9$ films are deposited, using the Pulsed Laser Deposition technique, onto Al$_2$O$_3$ polycrystalline substrates textured by Spark Plasma Sintering. The structural quality of the 2000 \AA thin film was investigated by Transmission Electron Microscopy, while the crystallographic orientation of the grains and the epitaxial relationships were determined by Electron Back Scatter Diffraction. The use of a polycrystalline ceramic template leads to structured films that are in good local epitaxial registry. The Seebeck coefficient is about 170 $\mu$V/K at 300 K, a typical value of misfit material with low carrier density. This high-throughput process, called combinatorial substrate epitaxy, appears to facilitate the rational tuning of functional oxide films, opening a route to the epitaxial synthesis of high quality complex oxides.Comment: Submitted to Applied Physics Letters (2013