Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM

We present results from an imaging study of filamentary conduction in silicon suboxide resistive RAM devices. We used a conductive atomic force microscope to etch through devices while measuring current, allowing us to produce tomograms of conductive filaments. To our knowledge this is the first report of such measurements in an intrinsic resistance switching material

Visibilia ex invisibilibus: seeing at the nanoscale for improved preservation of parchment

This paper describes the application of atomic force microscopy (AFM) for the imaging of collagen denaturation as observed in parchment. Parchment is prepared from processed animal skin and collagen is the main component. Large collections in national archives, libraries and religious institutions contain numerous documents written on parchment. Their preservation presents an unsolved problem for conservators. The main challenge is to assess the state of collagen and to detect what conservators refer to as the pre-gelatinised state, which can cause surface cracking resulting in a loss of text and can increase the vulnerability of parchment to aqueous cleaning agents. Atomic force microscopy (AFM) was first used within the Improved Damage Assessment of Parchment (IDAP) project, enabling the characterisation of the collagen structure within parchment at the nanoscale. Damage categories were also established based on the extent of the ordered collagen structure that was observed in the AFM images. This paper describes the work following the IDAP project, where morphological changes in the fibres due to both artificial and natural ageing were observed and linked to observations made by AFM. It also explores the merits and drawbacks of different approaches used for sample preparation and the possibility of using a portable AFM for imaging directly on the surface of documents. A case study on a manuscript from the 18th century is presented

Nanosecond analog programming of substoichiometric silicon oxide resistive RAM

Slow access time, high power dissipation and a rapidly approaching scaling limit constitute roadblocks for existing non-volatile flash memory technologies. A new family of storage devices is needed. Filamentary resistive RAM (ReRAM) offers scalability, potentially sub-10nm, nanosecond write times and a low power profile. Importantly, applications beyond binary memories are also possible. Here we look at aspects of the electrical response to nanosecond stimuli of intrinsic resistance switching TiN/SiOx/TiN ReRAM devices. Simple sequences of identical pulses switch devices between two or more states, leading to the possibility of simplified programmers. Impedance mismatch between the device under test and the measurement system allows us to track the electroforming process and confirm it occurs on the nanosecond timescale. Furthermore, we report behavior reminiscent of neuronal synapses (potentiation, depression and short-term memory). Our devices therefore show great potential for integration into novel hardware neural networks

Neuromorphic Dynamics at the Nanoscale in Silicon Suboxide RRAM

Resistive random-access memories, also known as memristors, whose resistance can be modulated by the electrically driven formation and disruption of conductive filaments within an insulator, are promising candidates for neuromorphic applications due to their scalability, low-power operation and diverse functional behaviors. However, understanding the dynamics of individual filaments, and the surrounding material, is challenging, owing to the typically very large cross-sectional areas of test devices relative to the nanometer scale of individual filaments. In the present work, conductive atomic force microscopy is used to study the evolution of conductivity at the nanoscale in a fully CMOS-compatible silicon suboxide thin film. Distinct filamentary plasticity and background conductivity enhancement are reported, suggesting that device behavior might be best described by composite core (filament) and shell (background conductivity) dynamics. Furthermore, constant current measurements demonstrate an interplay between filament formation and rupture, resulting in current-controlled voltage spiking in nanoscale regions, with an estimated optimal energy consumption of 25 attojoules per spike. This is very promising for extremely low-power neuromorphic computation and suggests that the dynamic behavior observed in larger devices should persist and improve as dimensions are scaled down

Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory

We present an investigation of structural changes in silicon-rich silicon oxide metal-insulator-metal resistive RAM devices. The observed unipolar switching, which is intrinsic to the bulk oxide material and does not involve movement of metal ions, correlates with changes in the structure of the oxide. We use atomic force microscopy, conductive atomic force microscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectroscopy to examine the structural changes occurring as a result of switching. We confirm that protrusions formed at the surface of samples during switching are bubbles, which are likely to be related to the outdiffusion of oxygen. This supports existing models for valence-change based resistive switching in oxides. In addition, we describe parallel linear and nonlinear conduction pathways and suggest that the conductance quantum, G0, is a natural boundary between the high and low resistance states of our devices

Prognosis of Hypothermic Patients Undergoing ECLS Rewarming-Do Alterations in Biochemical Parameters Matter?

While ECLS is a highly invasive procedure, the identification of patients with a potentially good prognosis is of high importance. The aim of this study was to analyse changes in the acid-base balance parameters and lactate kinetics during the early stages of ECLS rewarming to determine predictors of clinical outcome. This single-centre retrospective study was conducted at the Severe Hypothermia Treatment Centre at John Paul II Hospital in Krakow, Poland. Patients ≥18 years old who had a core temperature (Tc) < 30 °C and were rewarmed with ECLS between December 2013 and August 2018 were included. Acid-base balance parameters were measured at ECLS implantation, at Tc 30 °C, and at 2 and 4 h after Tc 30 °C. The alteration in blood lactate kinetics was calculated as the percent change in serum lactate concentration relative to the baseline. We included 50 patients, of which 36 (72%) were in cardiac arrest. The mean age was 56 ± 15 years old, and the mean Tc was 24.5 ± 12.6 °C. Twenty-one patients (42%) died. Lactate concentrations in the survivors group were significantly lower than in the non-survivors at all time points. In the survivors group, the mean lactate concentration decreased -2.42 ± 4.49 mmol/L from time of ECLS implantation until 4 h after reaching Tc 30 °C, while in the non-survivors' group (p = 0.024), it increased 1.44 ± 6.41 mmol/L. Our results indicate that high lactate concentration is associated with a poor prognosis for hypothermic patients undergoing ECLS rewarming. A decreased value of lactate kinetics at 4 h after reaching 30 °C is also associated with a poor prognosis

Improving the Consistency of Nanoscale Etching for Atomic Force Microscopy Tomography Applications

The atomic force microscope (AFM) empowers research into nanoscale structural and functional material properties. Recently, the scope of application has broadened with the arrival of conductance tomography, a technique for mapping current in three-dimensions in electronic devices by gradually removing sample material with the scanning probe. This technique has been valuable in studying resistance switching memories and solar cells, although its broader use has been hindered by a lack of understanding of its reliability and practicality. Implementation can be preclusive, owing to difficulties in characterizing tip-sample interactions and accounting for probe degradation, both of which are crucial factors in process efficacy. This work follows the existing conductance tomography literature, presenting an insight into the repeatability and reliability of the material removal processes. The consistency of processes on a hard oxide and a softer metal are investigated, to understand the critical differences in etching behavior that might affect tomography measurements on heterostructures. Individual probe behavior stabilizes following a wearing-in stage and etching processes are consistent between probes, in particular on oxide. However, process inconsistency increases with applied force on metal. The effects of scan angle, tip speed and feedback gain are therefore explored and their tuning found to improve the spatial consistency of material removal. With these findings, we aim to present a critical study of the implementation of tomography with the AFM in order to contribute to its methodological development

Resistive switching in silicon suboxide films

We report a study of resistive switching in a silicon-based memristor/resistive RAM (RRAM) device in which the active layer is silicon-rich silica. The resistive switching phenomenon is an intrinsic property of the silicon-rich oxide layer and does not depend on the diffusion of metallic ions to form conductive paths. In contrast to other work in the literature, switching occurs in ambient conditions, and is not limited to the surface of the active material. We propose a switching mechanism driven by competing field-driven formation and current-driven destruction of filamentary conductive pathways. We demonstrate that conduction is dominated by trap assisted tunneling through noncontinuous conduction paths consisting of silicon nanoinclusions in a highly nonstoichiometric suboxide phase. We hypothesize that such nanoinclusions nucleate preferentially at internal grain boundaries in nanostructured films. Switching exhibits the pinched hysteresis I/V loop characteristic of memristive systems, and on/off resistance ratios of 104:1 or higher can be easily achieved. Scanning tunneling microscopy suggests that switchable conductive pathways are 10 nm in diameter or smaller. Programming currents can be as low as 2 μA, and transition times are on the nanosecond scale

HER2 testing in breast cancer: Opportunities and challenges

Human epidermal growth factor receptor 2 (HER2) is overexpressed in 15-25% of breast cancers, usually as a result of HER2 gene amplification. Positive HER2 status is considered to be an adverse prognostic factor. Recognition of the role of HER2 in breast cancer growth has led to the development of anti-HER2 directed therapy, with the humanized monoclonal antibody trastuzumab (Herceptin (R)) having been approved for the therapy of HER2-positive metastatic breast cancer. Clinical studies have further suggested that HER2 status can provide important information regarding success or failure of certain hormonal therapies or chemotherapies. As a result of these developments, there has been increasing demand to perform HER2 testing on current and archived breast cancer specimens. This article reviews the molecular background of HER2 function, activation and inhibition as well as current opinions concerning its role in chemosensitivity and interaction with estrogen receptor biology. The different tissue-based assays used to detect HER2 amplification and overexpression are discussed with respect to their advantages and disadvantages, when to test (at initial diagnosis or pre-treatment), where to test (locally or centralized) and the need for quality assurance to ensure accurate and valid testing results