370 research outputs found

    High-Tc ramp-type Josephson junctions on MgO substrates for Terahertz applications

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    The authors successfully fabricated high-Tc ramp-type junctions with PrBa2Cu3-xGaxO7-δ (PBCGO: x=0.1, 0.4) barriers on MgO substrates. The junctions showed resistively shunted Josephson junction (RSJ)-like I-V curves with thermally and voltage activated conductivity. The IcRn products for these junctions scaled very well with the Ga-doping. Maximum response of the junctions for 100-GHz millimeter-wave irradiation could be observed up to 12 mV corresponding to 6 THz. Using far infrared laser radiation, we confirmed a terahertz (THz) response of these junctions. These results show promise for THz-wave applications of ramp-type Josephson junctions

    Growth mode transition from layer-by-layer to step-flow during the growth of heteroepitaxial SrRu)3 on (001) SrTiO3

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    We have observed the growth mode transition from two-dimensional (2D) layer-by-layer to step-flow in the earliest stage growth of heteroepitaxial SrRuO3 thin films on TiO2-terminated (001) SrTiO3 substrates by in situ high pressure reflective high energy electron diffraction (RHEED) and atomic-force microscopy. There is no RHEED intensity recovery after each laser pulse in the first oscillation when the growth mode is 2D layer-by-layer. On the other hand, it is getting more pronounced in the second oscillation, and finally reaches a dynamic steady state in which the growth mode is completely changed into the step-flow mode. The origin of the growth mode transition can be attributed to a change in the mobility of adatoms and switching the surface termination layer from the substrate to the film. SrRuO3 thin films with an atomically smooth surface grown by atomic layer control can be used in oxide multilayered heterostructure devices

    Role of the oxygen plasma during in situ growth of YBa2Cu3O6+x thin films by pulsed laser deposition

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    The incorporation of oxygen into YBa2Cu3O6+x (YBaCuO) thin films during in situ growth by pulsed laser deposition (PLD) has been investigated as a function of the ablation conditions. A quenching technique has been used immediately after termination of growth to avoid any oxygen in or out-diffusion during the cooling down step. It is shown that superconducting YBaCuO thin films can be formed without any post-oxygenation procedure, contrary to what is expected from the (Image, T) thermodynamic diagram. Moreover, it is found that there is an optimal target-substrate distance, D, for each O2 deposition pressure, Image, that leads to the higher critical temperature (i.e., higher oxygenation) as well as to the best structural and morphological properties of quenched films. The results are discussed considering the formation of reactive oxygen in the laser-induced plasma during film growth

    Pulsed-laser deposition of MgB2 and B thin films

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    Thin films of the novel superconductor MgB2 were deposited from an Mg-enriched MgB2 target or by alternating ablation from Mg and B targets, depositing multilayers. The superconducting films were achieved in situ by a two-step process: deposition at low temperatures ranging from room temperature to 200 °C and subsequently heating to 600 °C. The color of the plasma originating from Mg or Mg-enriched MgB2 targets during the deposition is an indicator of the constituents of the plasma and can be used to adjust the plasma parameters like pressure and energy density. The films showed a reduced critical temperature (Tc) compared to the bulk value (39 K), which is attributed to the small grain sizes and the relatively high base pressure of the system (10-7 mbar) causing impurities (oxygen, carbon...). To investigate B oxidation and to determine the suitable deposition conditions for B, films made by pulsed-laser deposition (PLD) from B target were analyzed by XPS. The films are very sensitive to the ambient gas purity and the base pressure. We anticipate an improvement of Tc and the crystallinity of MgB2 thin films by using PLD in high vacuum and with a high purity Ar and H2 gas mixture

    Probing the Nature of Short Swift Bursts via Deep INTEGRAL Monitoring of GRB 050925

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    We present results from Swift, XMM-Newton, and deep INTEGRAL monitoring in the region of GRB 050925. This short Swift burst is a candidate for a newly discovered soft gamma-ray repeater (SGR) with the following observational burst properties: 1) galactic plane (b=-0.1 deg) localization, 2) 150 msec duration, and 3) a blackbody rather than a simple power-law spectral shape (with a significance level of 97%). We found two possible X-ray counterparts of GRB 050925 by comparing the X-ray images from Swift XRT and XMM-Newton. Both X-ray sources show the transient behavior with a power-law decay index shallower than -1. We found no hard X-ray emission nor any additional burst from the location of GRB 050925 in ~5 Ms of INTEGRAL data. We discuss about the three BATSE short bursts which might be associated with GRB 050925, based on their location and the duration. Assuming GRB 050925 is associated with the H II regions (W 58) at the galactic longitude of l=70 deg, we also discuss the source frame properties of GRB 050925.Comment: 13 pages, 13 figures, accepted for publication in ASR special issue on Neutron Stars and Gamma Ray Bursts, full resolution of Fig 5 is available at http://asd.gsfc.nasa.gov/Takanori.Sakamoto/GRB050925/integral_ibis_images.ep
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