Spin-polarized electron transport processes at the ferromagnet/semiconductor interface

Circularly polarized light was used to excite electrons with a spin polarization perpendicular to the film plane in ferromagnet/semiconductor hybrid structures. The Schottky characteristics at the interface were varied by using NiFe, Co and Fe as the ferromagnet. The Schottky characteristics were clearly observed with NiFe and Co/GaAs, while almost ohmic I-V characteristics were seen with Fe/GaAs. At negative bias a helicity-dependent photocurrent, dependent upon the magnetization configuration of the film and the Schottky barrier height, was detected upon modulating the polarization from right to left circular, For the magnetization along or perpendicular to the surface normal, the helicity-dependent photocurrent In or I 0, respectively, was measured. The asymmetry P=(In-I0)/(In+I0) of the helicity-dependent photocurrent decreases upon increasing the doping density of the GaAs substrates. P also decreases with photon energy h¿ as found for the polarization of photoexcited electrons in GaAs. In NiFe/GaAs samples for h¿=1.59 eV, P=16% for n+=1023 m-3 and P=-23% for p-=1025 m-3 doped substrates, i.e. P is comparable in magnitude to the theoretically predicted spin polarization of 50% for the optically pumped conduction band in GaAs. The results provide unambiguous evidence of spin-polarized electron transport through the ferromagnet/semiconductor interface and show that the Schottky barrier height controls the spin-polarized electron current passing from the semiconductor to the ferromagnet. The asymmetry data indicates that spin-polarized electrons are transmitted from the semiconductor to the ferromagnet with a high efficiency

Magnetic domain evolution in permalloy mesoscopic dots

Permalloy (Ni80Fe20) squares (30 nm thick and w mu m wide; 1 less than or equal to w less than or equal to 200 mu m) and circular disks (30 nm thick and r mu m diameter; 1 less than or equal to r less than or equal to 200 mu m) prepared on a GaAs (100) substrate were observed in both their demagnetized and remanent states by magnetic force microscopy (MFM) associated with non-contact atomic force microscopy (NC-AFM). The squares (2 less than or equal to w mu m) exhibited conventional closure domains and the corner plays a very important role in creating new walls. The circular disks, on the other hand, formed either vortex domain (5 less than or equal to r less than or equal to 20 mu m) or multi-domain (50 less than or equal to r mu m) states, The magnetization rotation is observed by MFM to change according to the size and shape of the elements, The MFM observations are supported by micromagnetic calculations which confirm the effect of the corner on the domain wall formation

Ferromagnetic/III-V semiconductor heterostructures and magneto-electronic devices

The interface magnetic and electronic properties of two Fe/III-V semiconductor systems, namely Fe/GaAs and Fe/InAs, grown at room temperature have been studied. A "magnetic interface", which is essential for the fabrication of magneto-electronic (ME) devices, was realized in both Fe/GaAs and Fe/InAs systems with suitable substrate processing and growth conditions. Furthermore, Fe/InAs was shown to have favorable interface electronic properties as Fe forms a low resistance ohmic contact on InAs. Two prototypes of ME device based on Fe/InAs are also discussed

Suspended two-dimensional electron gases in In0.75Ga0.25As quantum wells

We demonstrate that In0.75Ga0.25 As quantum wells can be freely suspended without losing electrical quality when the epitaxial strain-relieving buffer layer is removed. In applied magnetic fields, non-dissipative behavior is observed in the conductivity, and a current induced breakdown of the quantum Hall effect shows a lower critical current in the suspended layers due to efficient thermal isolation compared to the non-suspended-control device. Beyond the critical current, background impurity scattering in the suspended two-dimensional channel regions dominates with stochastic, resonant-like features in the conductivity. This device fabrication scheme offers the potential for thermally isolated devices containing suspension-asymmetry-induced, high spin–orbit coupling strengths with reduced electron–phonon interaction behavior but without introducing high levels of disorder in the processing

Possible zero-magnetic field fractional quantization in In0.75Ga0.25As heterostructures

In this Letter, we report a systematic study of a structure found in zero magnetic field at or near 0.2 ×(e2/h) in In0.75Ga0.25As heterostructures, where e is the fundamental unit of charge and h is Planck's constant. This structure has been observed in many samples and stays at near constant conductance despite a large range of external potential changes, the stability indicating a quantum state. We have also studied the structure in the presence of high in-plane magnetic fields and find an anisotropy which can be related to the Rashba spin–orbit interaction and agrees with a recent theory based on the formation of coherent back-scattering. A possible state with conductance at 0.25 ×(e2/h) has also been found. The quantum states described here will help with the fundamental understanding of low-dimensional electronic systems with strong spin–orbit coupling and may offer new perspectives for future applications in quantum information schemes

Zero-magnetic field fractional quantum states

Since the discovery of the fractional quantum Hall effect in 1982 there has been considerable theoretical discussion on the possibility of fractional quantization of conductance in the absence of Landau levels formed by a quantizing magnetic field. Although various situations have been theoretically envisaged, particularly lattice models in which band flattening resembles Landau levels, the predicted fractions have never been observed. In this Letter, we show that odd and even denominator fractions can be observed, and manipulated, in the absence of a quantizing magnetic field, when a low-density electron system in a GaAs based one-dimensional quantum wire is allowed to relax in the second dimension. It is suggested that such a relaxation results in formation of a zigzag array of electrons with ring paths which establish a cyclic current and a resultant lowering of energy. The behavior has been observed for both symmetric and asymmetric confinement but increasing the asymmetry of the confinement potential, to result in a flattening of confinement, enhances the appearance of new fractional states. We find that an in-plane magnetic field induces new even denominator fractions possibly indicative of electron pairing. The new quantum states described here have implications both for the physics of low dimensional electron systems and also for quantum technologies. This work will enable further development of structures which are designed to electrostatically manipulate the electrons for the formation of particular configurations. In turn, this could result in a designer tailoring of fractional states to amplify particular properties of importance in future quantum computation

A Zebrafish Compound Screen Reveals Modulation of Neutrophil Reverse Migration as an Anti-Inflammatory Mechanism

Diseases of failed inflammation resolution are common and largely incurable. Therapeutic induction of inflammation resolution is an attractive strategy to bring about healing without increasing susceptibility to infection. However, therapeutic targeting of inflammation resolution has been hampered by a lack of understanding of the underlying molecular controls. To address this drug development challenge, we developed an in vivo screen for proresolution therapeutics in a transgenic zebrafish model. Inflammation induced by sterile tissue injury was assessed for accelerated resolution in the presence of a library of known compounds. Of the molecules with proresolution activity, tanshinone IIA, derived from a Chinese medicinal herb, potently induced inflammation resolution in vivo both by induction of neutrophil apoptosis and by promoting reverse migration of neutrophils. Tanshinone IIA blocked proinflammatory signals in vivo, and its effects are conserved in human neutrophils, supporting a potential role in treating human inflammation and providing compelling evidence of the translational potential of this screening strategy

Ecological Invasion, Roughened Fronts, and a Competitor's Extreme Advance: Integrating Stochastic Spatial-Growth Models

Both community ecology and conservation biology seek further understanding of factors governing the advance of an invasive species. We model biological invasion as an individual-based, stochastic process on a two-dimensional landscape. An ecologically superior invader and a resident species compete for space preemptively. Our general model includes the basic contact process and a variant of the Eden model as special cases. We employ the concept of a "roughened" front to quantify effects of discreteness and stochasticity on invasion; we emphasize the probability distribution of the front-runner's relative position. That is, we analyze the location of the most advanced invader as the extreme deviation about the front's mean position. We find that a class of models with different assumptions about neighborhood interactions exhibit universal characteristics. That is, key features of the invasion dynamics span a class of models, independently of locally detailed demographic rules. Our results integrate theories of invasive spatial growth and generate novel hypotheses linking habitat or landscape size (length of the invading front) to invasion velocity, and to the relative position of the most advanced invader.Comment: The original publication is available at www.springerlink.com/content/8528v8563r7u2742

Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001)

Structural and magnetic properties of 1-10 nm thick Fe films deposited on GaN(0001) were investigated. In-situ reflecting high energy electron diffraction images indicated a α-Fe(110)/GaN(0001) growth of the 3D Volmer-Weber type. The α-Fe(110) XRD peak showed a 1° full-width at half-maximum, indicating ≈ 20 nm grain sizes. A significant reduction in Fe atomic moment from its bulk value was observed for films thinner than 4 nm. Both GaN/Fe interface roughness and Fe film coercivity increased with Fe thickness, indicating a possible deterioration of Fe crystalline quality. Magnetic anisotropy was mainly uniaxial for all films while hexagonal anisotropies appeared for thicknesses higher than 3.7 nm

System Size and Energy Dependence of Jet-Induced Hadron Pair Correlation Shapes in Cu+Cu and Au+Au Collisions at sqrt(s_NN) = 200 and 62.4 GeV

We present azimuthal angle correlations of intermediate transverse momentum (1-4 GeV/c) hadrons from {dijets} in Cu+Cu and Au+Au collisions at sqrt(s_NN) = 62.4 and 200 GeV. The away-side dijet induced azimuthal correlation is broadened, non-Gaussian, and peaked away from \Delta\phi=\pi in central and semi-central collisions in all the systems. The broadening and peak location are found to depend upon the number of participants in the collision, but not on the collision energy or beam nuclei. These results are consistent with sound or shock wave models, but pose challenges to Cherenkov gluon radiation models.Comment: 464 authors from 60 institutions, 6 pages, 3 figures, 2 tables. Submitted to Physical Review Letters. Plain text data tables for the points plotted in figures for this and previous PHENIX publications are (or will be) publicly available at http://www.phenix.bnl.gov/papers.htm