Young children retain fast mapped object labels better than shape, color, and texture words

We compared short- and long-term retention of fast mapped color, shape and texture words as well as object labels. In an exposure session, 354 3- and 4-year-old children were shown a set of two familiar and three novel stimuli. One of the novel stimuli was labeled with a new object label, color, shape or texture word. Retention of the mapping between the new word and the novel object or property was measured either five minutes or one week later. After five minutes, retention was significantly above chance in all conditions. However, after one week only the mappings for object labels were retained above chance levels. Our findings suggest that fast mapped object labels are retained long-term better than color, shape and texture words. The results also highlight the importance of comparing short- and long-term retention when studying children’s word learning

Get your facts right : preschoolers systematically extend both object names and category-relevant facts

There is an ongoing debate over the extent to which language development shares common processing mechanisms with other domains of learning. It is well-established that toddlers will systematically extend object labels to similarly-shaped category exemplars (e.g., Landau, Smith, & Jones, 1988; Markman & Hutchinson, 1984). However, previous research is inconclusive as to whether young children will similarly extend factual information about an object to other category members. We explicitly contrast facts varying in category relevance, and test for extension using two different tasks. Three- to four-year-olds (N = 61) were provided with one of three types of information about a single novel object: a category-relevant fact (‘it’s from a place called Modi’), a category-irrelevant fact (‘my uncle gave it to me’), or an object label (‘it’s called a Modi’). At test, children provided with the object name or category-relevant fact were significantly more likely to display systematic category extension than children who learnt the category-irrelevant fact. Our findings contribute to a growing body of evidence that the mechanisms responsible for word learning may be domain-general in nature

Comparing the Economic Impact of an Export Shock in Two Modeling Frameworks

Because of more restrictive assumptions on regional input-output (IO) models compared to computable general equilibrium (CGE) models, the literature agrees IO results are intuitively consistent with long run equilibrium but otherwise overestimated. We compare the results of IO and CGE models from an exogenous export shock under various labor market constraints and capital closures. Consistent with the literature, we find the IO model's results do not match those of the CGE models. But contrary to conventional wisdom, the positive secondary impacts are larger with the CGE models than with the IO model. Furthermore, we find the closest match between direct effects is when the CGE model has short run restrictions. Our finding means that the common view of CGE model results being both lower in estimate and more accurate in the short run than IO models does not universally hold. Thus researchers’ choice of models and interpretation of results need to be more nuanced and cautious than previously thought.input-output, computable general equilibrium, economic impacts, exports

Genetic algorithms: a pragmatic, non-parametric approach to exploratory analysis of questionnaires in educational research

Data from a survey to determine student attitudes to their courses are used as an example to show how genetic algorithms can be used in the analysis of questionnaire data. Genetic algorithms provide a means of generating logical rules which predict one variable in a data set by relating it to others. This paper explains the principle underlying genetic algorithms and gives a non-mathematical description of the means by which rules are generated. A commercially available computer program is used to apply genetic algorithms to the survey data. The results are discussed

C3TM: CEI CCD charge transfer model for radiation damage analysis and testing

Radiation induced defects in the silicon lattice of Charge Couple Devices (CCDs) are able to trap electrons during read out and thus create a smearing effect that is detrimental to the scientific data. To further our understanding of the positions and properties of individual radiation-induced traps and how they affect space- borne CCD performance, we have created the Centre for Electronic Imaging (CEI) CCD Charge Transfer Model (C3TM). This model simulates the physical processes taking place when transferring signal through a radiation damaged CCD. C3TM is a Monte Carlo model based on Shockley-Read-Hall theory, and it mimics the physical properties in the CCD as closely as possible. It runs on a sub-electrode level taking device specific charge density simulations made with professional TCAD software as direct input. Each trap can be specified with 3D positional information, emission time constant and other physical properties. The model is therefore also able to simulate multi-level clocking and other complex clocking schemes, such as trap pumping

Hex Player—a virtual musical controller

In this paper, we describe a playable musical interface for tablets and multi-touch tables. The interface is a generalized keyboard, inspired by the Thummer, and consists of an array of virtual buttons. On a generalized keyboard, any given interval always has the same shape (and therefore fingering); furthermore, the fingering is consistent over a broad range of tunings. Compared to a physical generalized keyboard, a virtual version has some advantages—notably, that the spatial location of the buttons can be transformed by shears and rotations, and their colouring can be changed to reflect their musical function in different scales. We exploit these flexibilities to facilitate the playing not just of conventional Western scales but also a wide variety of microtonal generalized diatonic scales known as moment of symmetry, or well-formed, scales. A user can choose such a scale, and the buttons are automatically arranged so their spatial height corresponds to their pitch, and buttons an octave apart are always vertically above each other. Furthermore, the most numerous scale steps run along rows, while buttons within the scale are light-coloured, and those outside are dark or removed. These features can aid beginners; for example, the chosen scale might be the diatonic, in which case the piano’s familiar white and black colouring of the seven diatonic and five chromatic notes is used, but only one scale fingering need ever be learned (unlike a piano where every key needs a different fingering). Alternatively, it can assist advanced composers and musicians seeking to explore the universe of unfamiliar microtonal scales

Evolution and impact of defects in a p-channel CCD after cryogenic proton-irradiation

P-channel CCDs have been shown to display improved tolerance to radiation-induced charge transfer inefficiency (CTI) when compared to n-channel CCDs. However, the defect distribution formed during irradiation is expected to be temperature dependent due to the differences in lattice energy caused by a temperature change. This has been tested through defect analysis of two p-channel e2v CCD204 devices, one irradiated at room temperature and one at a cryogenic temperature (153K). Analysis is performed using the method of single trap pumping. The dominant charge trapping defects at these conditions have been identified as the donor level of the silicon divacancy and the carbon interstitial defect. The defect parameters are analysed both immediately post irradiation and following several subsequent room-temperature anneal phases up until a cumulative anneal time of approximately 10 months. We have also simulated charge transfer in an irradiated CCD pixel using the defect distribution from both the room-temperature and cryogenic case, to study how the changes affect imaging performance. The results demonstrate the importance of cryogenic irradiation and annealing studies, with large variations seen in the defect distribution when compared to a device irradiated at room-temperature, which is the current standard procedure for radiation-tolerance testing

Importance of charge capture in interphase regions during readout of charge-coupled devices

The current understanding of charge transfer dynamics in charge-coupled devices (CCDs) is that charge is moved so quickly from one phase to the next in a clocking sequence and with a density so low that trapping of charge in the interphase regions is negligible. However, simulation capabilities developed at the Centre for Electronic Imaging, which includes direct input of electron density simulations, have made it possible to investigate this assumption further. As part of the radiation testing campaign of the Euclid CCD273 devices, data have been obtained using the trap pumping method, a method that can be used to identify and characterize single defects within CCDs. Combining these data with simulations, we find that trapping during the transfer of charge among phases is indeed necessary to explain the results of the data analysis. This result could influence not only trap pumping theory and how trap pumping should be performed but also how a radiation-damaged CCD is readout in the most optimal way

Modelling charge transfer in a radiation damaged charge coupled device for Euclid

As electrons are transferred through a radiation damaged Charge Coupled Device (CCD), they may encounter traps in the silicon in which they will be captured and subsequently released. This capture and release of electrons can lead to a 'smearing' of the image. The dynamics of the trapping process can be described through the use of Shockley-Read-Hall theory, in which exponential time constants are used to determine the probability of capture and release. If subjected to a hostile radiation environment, such as in space where the dominant charged particle is the proton, these incident protons can cause displacement damage within the CCD and lead to the formation of stable trap sites. As the trap density increases, the trapping and release of signal electrons can have a major impact on the Charge Transfer Efficiency (CTE) to the detriment of device performance. As the science goals for missions become ever more demanding, such as those for the ESA Euclid and Gaia missions, the problem of radiation damage must be overcome. In order to gain a deeper understanding of the trapping process and the impact on device performance, a Monte Carlo simulation has been developed to model the transfer of charge in a radiation damaged CCD. This study investigates the various difficulties encountered when developing such a model: the incorporation of appropriate clocking mechanisms, the use of suitable trap parameters and their degeneracy, and the development of methods to model the charge storage geometry within a pixel through the use of three-dimensional Silvaco simulations