Subsolidus phase equilibria in the PbO-poor part of the TiO2-PbO-SiO2 system and its application in low-temperature thick-film dielectrics

Subsolidus equilibria in the PbO-poor part of the TiO2-PbO-SiO2 diagram were studied with the aim of investigating possible applications for low-temperature thick-film dielectrics. The tie lines are between PbTiO2 and PbSiO3, and between PbTiO3 and SiO2. The results show that the TiO2, when added to low-temperature softening point glasses, reacts with the PbO from the glass, so forming PbTiO3. These results were applied to a low-temperature firing dielectric, consisting of a lead-rich PbO-SiO2-B2O3 glass filled with a TiO2 powder. The conversion of TiO2 to the PbTiO3 crystalline phase was observed above firing temperatures of approximately 600 °C. The kinetics of the reaction depend on the particle size of the TiO

Subsolidus phase equilibria in the RuO2 - Bi2O3 - SiO2 system

Subsolidus equilibria in the RuO2–Bi2O3–SiO2 diagram were studied with the aim of investigating possible interactions between the bismuth-ruthenate- based conductive phase and the silica-rich glasses in thick-film resistors. The tie lines are between Bi2Ru2O7 and Bi12SiO20 (gamma phase), between Bi2Ru2O7 and Bi4Si3O12, and between RuO2 and Bi4Si3O12. This indicates that the bismuth ruthenate is not stable in the presence of the silica-rich glass phase

Fabrication and modeling of piezoelectric transducers for High-Frequency medical imaging

International audienceWe have studied the processing of piezoelectric thick films using electrophoretic deposition (EPD) for high-frequency ultrasound applications. Lead-zirconium-titanate (PZT) particles synthetized by solid states synthesis were dispersed in ethanol using ammonium polyacrylate (PAA). The electrophoretic deposition of PZT particles was performed at a constant-current mode. PZT thick-films deposited at 1 mA for 60 seconds were sintered at 900oC for 2 hours in a PbO-controlled atmosphere. The scanning-electron microscopy (SEM) analysis shows that the thickness of PZT layer is uniform and that the pores are homogeneously distributed within the layer. The complex electrical impedance was measured and fitted by KLM scheme in order to deduce the dielectric, mechanical and piezoelectric parameters of the thick-films. The density and thickness of PZT thick films are used as inputs and the thickness coupling factor kt, dielectric constant at constant strain and resonant frequency are deduced. The results show that homogeneous PZT thick-film structures with tailored thickness and density prepared by EPD and sintering having a resonant frequency around 20 MHz can be used for noninvasive medical ultrasound imaging and diagnostics

Subsolidus phase equilibria in the PbO-poor part of the TiO2–PbO–SiO2 system and its application in low-temperature thick-film dielectrics

Subsolidus equilibria in the PbO-poor part of the TiO2–PbO–SiO2 diagram were studied with the aim of investigating possible applications for low-temperature thick-film dielectrics. The tie lines are between PbTiO2 and PbSiO3, and between PbTiO3 and SiO2. The results show that the TiO2, when added to low- temperature softening point glasses, reacts with the PbO from the glass, so forming PbTiO3. These results were applied to a low-temperature firing dielectric, consisting of a lead-rich PbO–SiO2–B2O3 glass filled with a TiO2 powder. The conversion of TiO2 to the PbTiO3 crystalline phase was observed above firing temperatures of approximately 600°C. The kinetics of the reaction depend on the particle size of the TiO2

Structural and electrical properties of 0.57PSN-0.43PT ceramics prepared by mechanochemical synthesis and sintered at low temperature

International audienceIn this investigation we show that the dielectric, ferroelectric and piezoelectric properties of stoichiometric 0.57Pb(Sc1/2Nb1/2)O3-0.43PbTiO3 (0.57PSN-0.43PT) ceramics prepared by mechanochemical synthesis are comparable or even better than the properties of 0.57PSN-0.43PT ceramics with Nb doping, which was proposed to enhance the electrical properties. Here, the stoichiometric ceramic was sintered to 97% of theoretical density at a temperature of 1000 ◦C, which is 200-300 ◦C lower than previously reported. The dielectric constant ε, remnant polarization Pr, piezoelectric coefficient d33, coupling coefficients kp and kt and mechanical quality factor Qm of the ceramics prepared by mechanochemical synthesis were 2200, 43 C/cm2, 570 pC/N, 0.71, 0.56 and 38, respectively. The effects of the poling field on the structural and electrical properties of the 0.57PSN-0.43PT ceramics were investigated. The results show that the ratio of the monoclinic to the tetragonal phases is influenced by the application of the poling electric field. The non-poled ceramics contain 71% of the monoclinic phase and 29% of the tetragonal phase. The highest d33, kp and kt were measured for ceramics poled at an electric field of 3 kV/mm. For these poled ceramics a phase determination of 86% monoclinic phase and 14% tetragonal phase was obtained from Rietveld refinements. © 2011 Elsevie