12 research outputs found
Nano-artifact metrics based on random collapse of resist
Artifact metrics is an information security technology that uses the
intrinsic characteristics of a physical object for authentication and clone
resistance. Here, we demonstrate nano-artifact metrics based on silicon
nanostructures formed via an array of resist pillars that randomly collapse
when exposed to electron-beam lithography. The proposed technique uses
conventional and scalable lithography processes, and because of the random
collapse of resist, the resultant structure has extremely fine-scale morphology
with a minimum dimension below 10 nm, which is less than the resolution of
current lithography capabilities. By evaluating false match, false non-match
and clone-resistance rates, we clarify that the nanostructured patterns based
on resist collapse satisfy the requirements for high-performance security
applications
Unidirectional light propagation through two-layer nanostructures based on optical near-field interactions
We theoretically demonstrate direction-dependent polarization conversion
efficiency, yielding unidirectional light transmission, through a two-layer
nanostructure by using the angular spectrum representation of optical
near-fields. The theory provides results that are consistent with
electromagnetic numerical simulations. This study reveals that optical
near-field interactions among nanostructured matter can provide unique optical
properties, such as the unidirectionality observed here, and offers fundamental
guiding principles for understanding and engineering nanostructures for
realizing novel functionalities
Optical near-field-mediated polarization asymmetry induced by two-layer nanostructures
International audienc