Spin polarization control through resonant states in an Fe/GaAs Schottky barrier

Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of electrons transported through the barrier. The results account very well for experimental results including the tunneling of photo-excited electrons, and suggest that the spin polarization (from -100% to 100%) is dependent on the Schottky barrier height. They also suggest that the sign of the spin polarization can be controlled with a bias voltage.Comment: 5 pages, 4 figure

Food, Nutrition, Physical Activity, and the Prevention of Cancer: a Global Perspective

This Report has a number of inter-related general purposes. One is to explore the extent to which food, nutrition, physical activity, and body composition modify the risk of cancer, and to specify which factors are most important. To the extent that environmental factors such as food, nutrition, and physical activity influence the risk of cancer, it is a preventable disease. The Report specifies recommendations based on solid evidence which, when followed, will be expected to reduce the incidence of cancer

An Effective Reduction of Critical Current for Current-Induced Magnetization Switching by a Ru Layer Insertion in an Exchange-Biased Spin-Valve

Recently it has been predicted that a spin-polarized electrical current perpendicular-to-plane (CPP) directly flowing through a magnetic element can induce magnetization switching through spin-momentum transfer. In this letter, the first observation of current-induced magnetization switching (CIMS) in exchange-biased spin-valves (ESPVs) at room temperature is reported. The ESPVs show the CIMS behavior under a sweeping dc current with a very high critical current density. It is demonstrated that a thin Ruthenium (Ru) layer inserted between a free layer and a top electrode effectively reduces the critical current densities for the CIMS. An "inverse" CIMS behavior is also observed when the thickness of the free layer increases.Comment: 15 pages with figure

Neurofilament light in plasma is a potential biomarker of central nervous system involvement in systemic lupus erythematosus

BACKGROUND: Neuropsychiatric manifestations (NP) are common in systemic lupus erythematosus (SLE). However, the pathophysiological mechanisms are not completely understood. Neurofilament light protein (NfL) is part of the neuronal cytoskeleton. Increased NfL concentrations, reflecting neurodegeneration, is observed in cerebrospinal fluid (CSF) in several neurodegenerative and neuroinflammatory conditions. We aimed to explore if plasma NfL could serve as a biomarker for central nervous system (CNS) involvement in SLE. METHODS: Sixty-seven patients with SLE underwent neurological examination; 52 underwent lumbar puncture, while 62 underwent cerebral magnetic resonance imaging (MRI). We measured selected auto-antibodies and other laboratory variables postulated to have roles in NP pathophysiology in the blood and/or CSF. We used SPM12 software for MRI voxel-based morphometry. RESULTS: Age-adjusted linear regression analyses revealed increased plasma NfL concentrations with increasing creatinine (β = 0.01, p < 0.001) and Q-albumin (β = 0.07, p = 0.008). We observed higher plasma NfL concentrations in patients with a history of seizures (β = 0.57, p = 0.014), impaired motor function (β = 0.36, p = 0.008), increasing disease activity (β = 0.04, p = 0.008), and organ damage (β = 0.10, p = 0.002). Voxel-based morphometry suggested an association between increasing plasma NfL concentrations and the loss of cerebral white matter in the corpus callosum and hippocampal gray matter. CONCLUSION: Increased plasma NfL concentrations were associated with some abnormal neurological, cognitive, and neuroimaging findings. However, plasma NfL was also influenced by other factors, such as damage accrual, creatinine, and Q-albumin, thereby obscuring the interpretation of how plasma NfL reflects CNS involvement. Taken together, NfL in CSF seems a better marker of neuronal injury than plasma NfL in patients with SLE

The 2020 magnetism roadmap

Following the success and relevance of the 2014 and 2017 Magnetism Roadmap articles, this 2020 Magnetism Roadmap edition takes yet another timely look at newly relevant and highly active areas in magnetism research. The overall layout of this article is unchanged, given that it has proved the most appropriate way to convey the most relevant aspects of today's magnetism research in a wide variety of sub-fields to a broad readership. A different group of experts has again been selected for this article, representing both the breadth of new research areas, and the desire to incorporate different voices and viewpoints. The latter is especially relevant for thistype of article, in which one's field of expertise has to be accommodated on two printed pages only, so that personal selection preferences are naturally rather more visible than in other types of articles. Most importantly, the very relevant advances in the field of magnetism research in recent years make the publication of yet another Magnetism Roadmap a very sensible and timely endeavour, allowing its authors and readers to take another broad-based, but concise look at the most significant developments in magnetism, their precise status, their challenges, and their anticipated future developments. While many of the contributions in this 2020 Magnetism Roadmap edition have significant associations with different aspects of magnetism, the general layout can nonetheless be classified in terms of three main themes: (i) phenomena, (ii) materials and characterization, and (iii) applications and devices. While these categories are unsurprisingly rather similar to the 2017 Roadmap, the order is different, in that the 2020 Roadmap considers phenomena first, even if their occurrences are naturally very difficult to separate from the materials exhibiting such phenomena. Nonetheless, the specifically selected topics seemed to be best displayed in the order presented here, in particular, because many of the phenomena or geometries discussed in (i) can be found or designed into a large variety of materials, so that the progression of the article embarks from more general concepts to more specific classes of materials in the selected order. Given that applications and devices are based on both phenomena and materials, it seemed most appropriate to close the article with the application and devices section (iii) once again. The 2020 Magnetism Roadmap article contains 14 sections, all of which were written by individual authors and experts, specifically addressing a subject in terms of its status, advances, challenges and perspectives in just two pages. Evidently, this two-page format limits the depth to which each subject can be described. Nonetheless, the most relevant and key aspects of each field are touched upon, which enables the Roadmap as whole to give its readership an initial overview of and outlook into a wide variety of topics and fields in a fairly condensed format. Correspondingly, the Roadmap pursues the goal of giving each reader a brief reference frame of relevant and current topics in modern applied magnetism research, even if not all sub-fields can be represented here. The first block of this 2020 Magnetism Roadmap, which is focussed on (i) phenomena, contains five contributions, which address the areas of interfacial Dzyaloshinskii-Moriya interactions, and two-dimensional and curvilinear magnetism, as well as spin-orbit torque phenomena and all optical magnetization reversal. All of these contributions describe cutting edge aspects of rather fundamental physical processes and properties, associated with new and improved magnetic materials' properties, together with potential developments in terms of future devices and technology. As such, they form part of a widening magnetism 'phenomena reservoir' for utilization in applied magnetism and related device technology. The final block (iii) of this article focuses on such applications and device-related fields in four contributions relating to currently active areas of research, which are of course utilizing magnetic phenomena to enable specific functions. These contributions highlight the role of magnetism or spintronics in the field of neuromorphic and reservoir computing, terahertz technology, and domain wall-based logic. One aspect common to all of these application-related contributions is that they are not yet being utilized in commercially available technology; it is currently still an open question, whether or not such technological applications will be magnetism-based at all in the future, or if other types of materials and phenomena will yet outperform magnetism. This last point is actually a very good indication of the vibrancy of applied magnetism research today, given that it demonstrates that magnetism research is able to venture into novel application fields, based upon its portfolio of phenomena, effects and materials. This materials portfolio in particular defines the central block (ii) of this article, with its five contributions interconnecting phenomena with devices, for which materials and the characterization of their properties is the decisive discriminator between purely academically interesting aspects and the true viability of real-life devices, because only available materials and their associated fabrication and characterization methods permit reliable technological implementation. These five contributions specifically address magnetic films and multiferroic heterostructures for the purpose of spin electronic utilization, multi-scale materials modelling, and magnetic materials design based upon machine-learning, as well as materials characterization via polarized neutron measurements. As such, these contributions illustrate the balanced relevance of research into experimental and modelling magnetic materials, as well the importance of sophisticated characterization methods that allow for an ever-more refined understanding of materials. As a combined and integrated article, this 2020 Magnetism Roadmap is intended to be a reference point for current, novel and emerging research directions in modern magnetism, just as its 2014 and 2017 predecessors have been in previous years

Controlling the half-metallicity of Heusler/Si(1 1 1) interfaces by a monolayer of Si–Co–Si

By using first-principles calculations we show that the spin-polarization reverses its sign at atomically abrupt interfaces between the half-metallic Co₂ (Fe,Mn)(Al,Si) and Si(1 1 1). This unfavourable spin-electronic configuration at the Fermi-level can be completely removed by introducing a Si–Co–Si monolayer at the interface. In addition, this interfacial monolayer shifts the Fermi-level from the valence band edge close to the conduction band edge of Si. We show that such a layer is energetically favourable to exist at the interface. This was further confirmed by direct observations of CoSi₂ nano-islands at the interface, by employing atomic resolution scanning transmission electron microscopy

Highly Efficient Spin-Current Operation in a Cu Nano-Ring

An all-metal lateral spin-valve structure has been fabricated with a medial Copper nano-ring to split the diffusive spin-current path. We have demonstrated significant modulation of the non-local signal by the application of a magnetic field gradient across the nano-ring, which is up to 30% more efficient than the conventional Hanle configuration at room temperature. This was achieved by passing a dc current through a current-carrying bar to provide a locally induced Ampère field. We have shown that in this manner a lateral spin-valve gains an additional functionality in the form of three-terminal gate operation for future spintronic logic

A theory of ferromagnetism in planar heterostructures of (Mn,III)-V semiconductors

A density functional theory of ferromagnetism in heterostructures of compound semiconductors doped with magnetic impurities is presented. The variable functions in the density functional theory are the charge and spin densities of the itinerant carriers and the charge and localized spins of the impurities. The theory is applied to study the Curie temperature of planar heterostructures of III-V semiconductors doped with manganese atoms. The mean-field, virtual-crystal and effective-mass approximations are adopted to calculate the electronic structure, including the spin-orbit interaction, and the magnetic susceptibilities, leading to the Curie temperature. By means of these results, we attempt to understand the observed dependence of the Curie temperature of planar $\delta$-doped ferromagnetic structures on variation of their properties. We predict a large increase of the Curie Temperature by additional confinement of the holes in a $\delta$-doped layer of Mn by a quantum well.Comment: 8 pages, 7 figure