Identifying the needs of communities in rural Uganda: A method for determining the ‘User-Perceived Value’ of rural electrification initiatives

This research paper describes the use of a ‘User-Perceived Value Game’ to explore the value of development initiatives as perceived by villagers in 119 interview settings in seven Ugandan villages. Based on the findings from the game, a ‘User-Perceived Value Framework’ is developed, consisting of 64 value categories. This is depicted graphically as a ‘User-Perceived Value Wheel’ supported by a ‘Key Phrase Wheel’, both can be modified using computer-assisted software developed by one of the authors. The aim is to understand the reasons why something is perceived by the end user to be important. This will lead to an improved understanding of how a development initiative can be better tailored for lower-income markets. The initiative can then be marketed appropriately, which will result in user acceptance because the initiative will be perceived to have personal value to the user and therefore the user will care for its upkeep. The paper concludes with a brief application of the ‘User-Perceived Value Wheel’ to demonstrate how this tool can be used to better understand the true sustainability drivers behind rural electrification development initiatives.Engineering and Physical Sciences Research Council (Grant ID: EP/K503009/1), Qualcomm European Research Studentships in Technology (Grant ID: 1068

A dataset of community perspectives on living conditions and disaster risk management in informal settlements: A case study in KwaZulu-Natal Province, South Africa

This article describes a dataset of community perspectives on living conditions and disaster risk management in Khan Road, a non-serviced informal settlement, located in Pietermaritzburg, the capital of KwaZulu-Natal province in South Africa. The data were collected by local community researchers via a structured questionnaire of 159 informal dwellers conducted between August and September 2022, using mobile phones via KoboToolbox. The dataset was analysed using exploratory data analysis (EDA) techniques. This household survey is part of a research project aiming to develop an evidence base of opportunities, risks and vulnerabilities related to housing construction and resource management in incremental upgrading of informal settlements in South Africa. This dataset can be used by local practitioners and policymakers involved in decision-making for informal settlement upgrading and help them prioritise resources and upgrading interventions based on what informal dwellers need. Furthermore, this cleaned dataset could support the analysis of further South African data guiding the development of digital platforms as a real-time resource management tool or guide the enhancement of existing theoretical frameworks in the field of participatory design and co-production used by academic scholars

Scanning Raman spectroscopy of graphene antidot lattices: Evidence for systematic p-type doping

We have investigated antidot lattices, which were prepared on exfoliated graphene single layers via electron-beam lithography and ion etching, by means of scanning Raman spectroscopy. The peak positions, peak widths and intensities of the characteristic phonon modes of the carbon lattice have been studied systematically in a series of samples. In the patterned samples, we found a systematic stiffening of the G band mode, accompanied by a line narrowing, while the 2D mode energies are found to be linearly correlated with the G mode energies. We interpret this as evidence for p-type doping of the nanostructured graphene

Low-temperature photocarrier dynamics in monolayer MoS2

The band structure of MoS$_2$ strongly depends on the number of layers, and a transition from indirect to direct-gap semiconductor has been observed recently for a single layer of MoS$_2$. Single-layer MoS$_2$ therefore becomes an efficient emitter of photoluminescence even at room temperature. Here, we report on scanning Raman and on temperature-dependent, as well as time-resolved photoluminescence measurements on single-layer MoS$_2$ flakes prepared by exfoliation. We observe the emergence of two distinct photoluminescence peaks at low temperatures. The photocarrier recombination at low temperatures occurs on the few-picosecond timescale, but with increasing temperatures, a biexponential photoluminescence decay with a longer-lived component is observed.Comment: 3 pages, 4 figure

Spin dynamics in p-doped semiconductor nanostructures subject to a magnetic field tilted from the Voigt geometry

We develop a theoretical description of the spin dynamics of resident holes in a p-doped semiconductor quantum well (QW) subject to a magnetic field tilted from the Voigt geometry. We find the expressions for the signals measured in time-resolved Faraday rotation (TRFR) and resonant spin amplification (RSA) experiments and study their behavior for a range of system parameters. We find that an inversion of the RSA peaks can occur for long hole spin dephasing times and tilted magnetic fields. We verify the validity of our theoretical findings by performing a series of TRFR and RSA experiments on a p-modulation doped GaAs/Al_{0.3}Ga_{0.7}As single QW and showing that our model can reproduce experimentally observed signals.Comment: 9 pages, 3 figures; corrected typo

Theory of Flux-Flow Resistivity near Hc2H_{c2} for s-wave Type-II Superconductors

This paper presents a microscopic calculation of the flux-flow resistivity $\rho_{f}$ for s-wave type-II superconductors with arbitrary impurity concentrations near the upper critical field $H_{c2}$. It is found that, as the mean free path $l$ becomes longer, $\rho_{f}$ increases gradually from the dirty-limit result of Thompson [Phys. Rev. B{\bf 1}, 327 (1970)] and Takayama and Ebisawa [Prog. Theor. Phys. {\bf 44}, 1450 (1970)]. The limiting behaviors suggest that $\rho_{f}(H)$ at low temperatures may change from convex downward to upward as $l$ increases, thus deviating substantially from the linear dependence $\rho_{f}\propto H/H_{c2}$ predicted by the Bardeen-Stephen theory [Phys. Rev. {\bf 140}, A1197 (1965)]

Terahertz radiation driven chiral edge currents in graphene

We observe photocurrents induced in single layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left- to right-handed. We demonstrate that the photocurrent stems from the sample edges, which reduce the spatial symmetry and result in an asymmetric scattering of carriers driven by the radiation electric field. The developed theory is in a good agreement with the experiment. We show that the edge photocurrents can be applied for determination of the conductivity type and the momentum scattering time of the charge carriers in the graphene edge vicinity.Comment: 4 pages, 4 figure, additional Supplemental Material (3 pages, 1 figure

Spin and orbital mechanisms of the magneto-gyrotropic photogalvanic effects in GaAs/AlGaAs quantum well structures

We report on the study of the linear and circular magneto-gyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Land\'e-factor g* depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded to separate spin and orbital contributions to both MPGEs. Our experiments show that, for most quantum well widths, the PGEs are mainly driven by spin-related mechanisms, which results in a photocurrent proportional to the g* factor. In structures with a vanishingly small g* factor, however, linear and circular MPGE are also detected, proving the existence of orbital mechanisms.Comment: 10 pages, 10 figure

Core pinning by intragranular nanoprecipitates in polycrystalline MgCNi_3

The nanostructure and magnetic properties of polycrystalline MgCNi_3 were studied by x-ray diffraction, electron microscopy, and vibrating sample magnetometry. While the bulk flux-pinning force curve F_p(H) indicates the expected grain-boundary pinning mechanism just below T_c = 7.2 K, a systematic change to pinning by a nanometer-scale distribution of core pinning sites is indicated by a shift of F_p(H) with decreasing temperature. The lack of scaling of F_p(H) suggests the presence of 10 to 20% of nonsuperconducting regions inside the grains, which are smaller than the diameter of fluxon cores 2xi at high temperature and become effective with decreasing temperature when xi(T) approaches the nanostructural scale. Transmission electron microscopy revealed cubic and graphite nanoprecipitates with 2 to 5 nm size, consistent with the above hypothesis since xi(0) = 6 nm. High critical current densities, more than 10^6 A/cm^2 at 1 T and 4.2 K, were obtained for grain colonies separated by carbon. Dirty-limit behavior seen in previous studies may be tied to electron scattering by the precipitates, indicating the possibility that strong core pinning might be combined with a technologically useful upper critical field if versions of MgCNi_3 with higher T_c can be found.Comment: 5 pages, 6 figures, submitted to PR

Decoherence-assisted initialization of a resident hole spin polarization in a two-dimensional hole gas

We investigate spin dynamics of resident holes in a p-modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum well. Time-resolved Faraday and Kerr rotation, as well as resonant spin amplification, are utilized in our study. We observe that nonresonant or high power optical pumping leads to a resident hole spin polarization with opposite sign with respect to the optically oriented carriers, while low power resonant optical pumping only leads to a resident hole spin polarization if a sufficient in-plane magnetic field is applied. The competition between two different processes of spin orientation strongly modifies the shape of resonant spin amplification traces. Calculations of the spin dynamics in the electron--hole system are in good agreement with the experimental Kerr rotation and resonant spin amplification traces and allow us to determine the hole spin polarization within the sample after optical orientation, as well as to extract quantitative information about spin dephasing processes at various stages of the evolution.Comment: 10 pages, 6 figures; moderate modifications, one new figur