Coarse wavelength division multiplexer on silicon-on-insulator for 100 GbE

A four-channel cascaded MZl based de-multiplexer at O-band with coarse channel spacing of 20 nm and band flatness of 13 nm is demonstrated on silicon-on-insulator. The device shows a mean crosstalk and insertion loss below -16 dB and 2.5 dB

8x14Gb/s ring WDM modulator array with integrated tungsten heaters and Ge monitor photodetectors

An 8x14Gb/s wavelength-division multiplexed Si ring modulator array is presented with uniform channel performance. Tungsten heaters and Ge monitor photodetectors at the ring modulator drop ports are co-integrated to track and control the modulation quality

Low-voltage Ge avalanche photodetector for highly sensitive 10Gb/s Si photonic receivers

We demonstrate low-voltage germanium waveguide avalanche photodetectors (APD) with gain-bandwidth product of 88GHz. A 7.1dB sensitivity improvement is demonstrated for an APD wire-bonded to a 10Gb/s CMOS transimpedance amplifier, at -6.2V APD bias

Low-voltage waveguide Ge APD based high sensitivity 10 Gb/s Si photonic receiver

We demonstrate low-voltage Ge waveguide avalanche photodetectors (APDs) with gain-bandwidth product over 100GHz. A 5.8dB avalanche sensitivity improvement (1x10(-12) bit error ratio at 10Gb/s) is obtained for the wire-bonded optical receiver at -5.9V APD bias

Quantized Dispersion of Two-Dimensional Magnetoplasmons Detected by Photoconductivity Spectroscopy

We find that the long-wavelength magnetoplasmon, resistively detected by photoconductivity spectroscopy in high-mobility two-dimensional electron systems, deviates from its well-known semiclassical nature as uncovered in conventional absorption experiments. A clear filling-factor dependent plateau-type dispersion is observed that reveals a so far unknown relation between the magnetoplasmon and the quantum Hall effect.Comment: 5 pages, 3 figure

Far-Infrared Excitations below the Kohn Mode: Internal Motion in a Quantum Dot

We have investigated the far-infrared response of quantum dots in modulation doped GaAs heterostructures. We observe novel modes at frequencies below the center-of-mass Kohn mode. Comparison with Hartree-RPA calculations show that these modes arise from the flattened potential in our field-effect confined quantum dots. They reflect pronounced relative motion of the charge density with respect to the center-of-mass.Comment: 8 pages, LaTeX with integrated 6 PostScript figure