29 research outputs found
Evidence of defect-induced ferromagnetism in ZnFeO thin films
X-ray absorption near-edge and grazing incidence X-ray fluorescence
spectroscopy are employed to investigate the electronic structure of
ZnFeO thin films. The spectroscopy techniques are used to determine
the non-equilibrium cation site occupancy as a function of depth and oxygen
pressure during deposition and its effects on the magnetic properties. It is
found that low deposition pressures below 10 mbar cause iron
superoccupation of tetrahedral sites without Zn inversion, resulting in
an ordered magnetic phase with high room temperature magnetic moment.Comment: Accepted for publication in Phys. Rev.
Antimicrobial and antioxidant potentials of essential oil and acetone extract of Myristica fragrans Houtt. (aril part)
The antifungal, antibacterial, and antioxidant potentials of essential oil and acetone extract were carried out by different techniques. In poison food medium method, the essential oil showed complete zones of inhibition against Fusarium graminearum at the all tested doses. For other tested fungi and bacteria, they gave good to moderate zone inhibition. The antioxidant activity was evaluated by measuring peroxide, thiobarbituric acid and total carbonyl values of rapeseed oil at fixed time intervals. Both the extract and essential oil showed strong antioxidant activity in comparison with butylated hydroxyanisole (BHA) and butylated hydroxytoluene (BHT). In addition, their inhibitory action in linoleic acid system was studied by monitoring peroxide concentration in emulsion during incubation. The results were well correlated with above values. Their radical scavenging capacity was carried out on 2,2′-diphenyl-1-picrylhydracyl (DPPH) radicalm, and they showed strong scavenging activity in comparison with synthetic antioxidants. Their reducing power was also determined, which also proved strong antioxidant capacity of essential oil and extract. Gas chromatographic-mass spectroscopy studies on essential oil resulted in the identification of 49 components representing 96.49% of the total amount, and the major component was sabinene (20.22%), followed by terpinen-4-ol (12.08%), safrole (10.32%), α-pinene (9.7%), β-phellandrene (6.56%), and γ-terpinene (5.93%). The acetone extract showed the presence of 23 components representing 71.66% of the total amount. The major components were isocroweacin (18.92%), elemicin (17.68%), methoxyeugenol (8.13%), linoleic acid (4.12%), dehydrodiisoeugenol (4.06%), palmitic acid (2.8%), and trans-isoeugenol (2.76%). © 2005 Institute of Food Technologists.Fil: Singh, Gurdip. Deen Dayal Upadhyay Gorakhpur University India; IndiaFil: Marimuthu, P.. Deen Dayal Upadhyay Gorakhpur University India; IndiaFil: De Heluani, Carola S.. Universidad Nacional de Tucumán; ArgentinaFil: Catalan, Cesar Atilio Nazareno. Universidad Nacional de Tucumán; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán. Instituto de Química del Noroeste. Universidad Nacional de Tucumán. Facultad de Bioquímica, Química y Farmacia. Instituto de Química del Noroeste; Argentin
Electric-pulse-induced reversible resistance in doped zinc oxide thin films
Nonvolatile, electric-pulse-induced resistance switching is reported on S and Co doped ZnO thin films deposited on different substrates using magnetron sputtering and laser ablation. Two resistance states were obtained by applying voltage pulses of different polarity. The switching was observed regardless of the substrate, dopant species, or microstructure of the samples. In the Co doped ZnO samples, the two resistance states are remarkably stable and uniform
Changes in the electrical transport of ZnO under visible light
Complex impedance spectroscopy data in the frequency range 16Hz < f < 3 MHz
at room temperature were acquired on pure ZnO single crystal and thin film. The
measured impedance of the ZnO samples shows large changes with time after
exposure to or covering them from visible light. At fixed times
Cole-Cole-diagrams indicate the presence of a single relaxation process. A
simple analysis of the impedance data allows us to obtain two main relaxation
times. The behavior for both, ZnO crystal and thin film, is similar but the
thin film shows shorter relaxation times. The analysis indicates the existence
of two different photo-active defects with activation energies between ~0.8 eV
and ~1.1 eV.Comment: 11 pages, 9 figures. Solid state communications, in pres
Study of the light-induced metal-insulator transition in SrTiO3 by photoresistance spectroscopy
Photoresistivity and its spectral response has been systematically studied in oxygen deficient SrTiO3 single crystals for a wide range of resistivities, ρ, and carrier densities, n. At roomtemperature we have found a persistent photoresistance that gradually decreases as ρ is diminished or n is increased in addition to relaxation times of seconds to a few minutes suggesting that trapping of carriers is playing a major role. An analysis of the photoresistance excitation spectra shows two distinctive features that are related to the indirect gap of SrTiO3 at (3.25 ± 0.04) eV and to a direct transition at (3.40 ± 0.03) eV. The photoresistive crystals present a temperature dependent resisitivity under illumination that experiences a metal-insulator transition below T ∼ 85 K. Lowtemperature photoresistance spectrum reveals as a suitable technique to understand the origin of this transition, pointing to an enhanced efficiency of the ∼ 3.25 eV gap to promote electrons to the bottom of the conduction band.Fil: Bridoux, German. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Solido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Villafuerte, Manuel Jose. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Solido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Ferreyra, J. M.. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Solido; ArgentinaFil: Bachi, N.. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Solido; ArgentinaFil: Figueroa, C. A.. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Solido; ArgentinaFil: Heluani, S. P.. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Solido; Argentin
Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires
The magneto-transport properties of single proton-implanted ZnO and of
Li(7\%)-doped ZnO microwires have been studied. The as-grown microwires were
highly insulating and not magnetic. After proton implantation the Li(7\%) doped
ZnO microwires showed a non monotonous behavior of the negative
magneto-resistance (MR) at temperature above 150 K. This is in contrast to the
monotonous NMR observed below 50 K for proton-implanted ZnO. The observed
difference in the transport properties of the wires is related to the amount of
stable Zn vacancies created at the near surface region by the proton
implantation and Li doping. The magnetic field dependence of the resistance
might be explained by the formation of a magnetic/non magnetic heterostructure
in the wire after proton implantation.Comment: 6 pages with 5 figure
Evidence of defect-induced ferromagnetism in ZnFe₂O₄ thin films
X-ray absorption near-edge and grazing incidence x-ray fluorescence spectroscopy are employed to investigate the electronic structure of ZnFe₂O₄ thin films. The spectroscopy techniques are used to determine the nonequilibrium cation site occupancy as a function of depth and oxygen pressure during deposition and its effects on the magnetic properties. It is found that low deposition pressures below 10 ⁻³ mbar cause iron superoccupation of tetrahedral sites without Zn²⁺ inversion, resulting in an ordered magnetic phase with high room-temperature magnetic moment.Instituto de Física La Plat
Chiral de Rham complex on Riemannian manifolds and special holonomy
Interpreting the chiral de Rham complex (CDR) as a formal Hamiltonian
quantization of the supersymmetric non-linear sigma model, we suggest a setup
for the study of CDR on manifolds with special holonomy. We show how to
systematically construct global sections of CDR from differential forms, and
investigate the algebra of the sections corresponding to the covariantly
constant forms associated with the special holonomy. As a concrete example, we
construct two commuting copies of the Odake algebra (an extension of the N=2
superconformal algebra) on the space of global sections of CDR of a Calabi-Yau
threefold and conjecture similar results for G_2 manifolds. We also discuss
quasi-classical limits of these algebras.Comment: 49 pages, title changed, major rewrite with no changes in the main
theorems, published versio
ZnO:Co Diluted Magnetic Semiconductor or Hybrid Nanostructure for Spintronics?
We have studied the influence of intrinsic and extrinsic defects in the
magnetic and electrical transport properties of Co-doped ZnO thin films. X ray
absorption measurements show that Co substitute Zn in the ZnO structure and it
is in the 2+ oxidation state. Magnetization (M) measurements show that doped
samples are mainly paramagnetic. From M vs. H loops measured at 5 K we found
that the values of the orbital L and spin S numbers are between 1 and 1.3 for L
and S = 3/2, in agreement with the representative values for isolated Co 2+.
The obtained negative values of the Curie-Weiss temperatures indicate the
existence of antiferromagnetic interactions between transition metal atoms.Comment: To be published in Journal of Materials Scienc