3,122 research outputs found

    First records of \u3ci\u3eHippodamia variegata\u3c/i\u3e (Goeze) (Coleoptera: Coccinellidae) for Iowa, U.S.A.

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    Hippodamia variegata (Goeze) (Coleoptera: Coccinellidae), a Palearctic lady beetle that has become established in North America, is reported for the first time from the state of Iowa, U.S.A. The earliest specimen of H. variegata from Iowa was collected in 2009, with two subsequent specimens in 2012. Collection records of an advancing, non-native species like H. variegata are important for determining comparative rates of geographic spread across various regions and understanding its invasion dynamics

    Strain Sensors, Methods of Making Same, and Applications of Same

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    In one aspect, the present invention relates to a layered structure usable in a strain sensor. In one embodiment, the layered structure has a substrate with a first surface and an opposite, second surface defining a body portion therebetween; and a film of carbon nanotubes deposited on the first surface of the substrate, wherein the film of carbon nanotubes is conductive and characterized with an electrical resistance. In one embodiment, the carbon nanotubes are aligned in a preferential direction. In one embodiment, the carbon nanotubes are formed in a yarn such that any mechanical stress increases their electrical response. In one embodiment, the carbon nanotubes are incorporated into a polymeric scaffold that is attached to the surface of the substrate. In one embodiment, the surfaces of the carbon nanotubes are functionalized such that its electrical conductivity is increased

    X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset

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    The valence band offset of wurtzite InN(0001)/yttria stabilized cubic-zirconia (YSZ)(111) heterojunctions is determined by x-ray photoemission spectroscopy to be 1.19±0.17 eV giving a conduction band offset of 3.06±0.20 eV. Consequently, a type-I heterojunction forms between InN and YSZ in the straddling arrangement. The low lattice mismatch and high band offsets suggest potential for use of YSZ as a gate dielectric in high-frequency InN-based electronic devices

    Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering

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    The composition profile along the [001] growth direction of low-growth-rate InAs–GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra

    FPGA Reliability and Failure Rate Analysis for Launch and Space Vehicles Environments

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    Field Programmable Gate Arrays (FPGAs) integrated circuits (IC) are one of the key electronic components in today's sophisticated launch and space vehicle complex avionic systems, largely due to their superb reprogrammable and reconfigurable capabilities combined with relatively low non-recurring engineering costs (NRE) and short design cycle. Consequently, FPGAs are prevalent ICs in communication protocols and control signal commands. This paper will demonstrate guidelines to estimate FPGA failure rates for ascent and in space operations. The guidelines will account for hardware and radiation-induced failures, as well as Bayesian updates to failure rates. The hardware contribution of the approach accounts for physical failures of the FPGA IC. The radiation portion will expand on FPGA susceptibility to different space radiation environments
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