104 research outputs found

    Small-signal model for 2D-material based field-effect transistors targeting radio-frequency applications: the importance of considering non-reciprocal capacitances

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    A small-signal equivalent circuit of 2D-material based field-effect transistors is presented. Charge conservation and non-reciprocal capacitances have been assumed so the model can be used to make reliable predictions at both device and circuit levels. In this context, explicit and exact analytical expressions of the main radio-frequency figures of merit of these devices are given. Moreover, a direct parameter extraction methodology is provided based on S-parameter measurements. In addition to the intrinsic capacitances, transconductance and output conductance, our approach allows extracting the series combination of drain/source metal contact and access resistances. Accounting for these extrinsic resistances is of upmost importance when dealing with low dimensional field-effect transistors.Comment: 8 pages, 10 figures, 4 table

    Velocity Saturation effect on Low Frequency Noise in short channel Single Layer Graphene FETs

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    Graphene devices for analog and RF applications are prone to Low Frequency Noise (LFN) due to its upconversion to undesired phase noise at higher frequencies. Such applications demand the use of short channel graphene transistors that operate at high electric fields in order to ensure a high speed. Electric field is inversely proportional to device length and proportional to channel potential so it gets maximized as the drain voltage increases and the transistor length shrinks. Under these conditions though, short channel effects like Velocity Saturation (VS) should be taken into account. Carrier number and mobility fluctuations have been proved to be the main sources that generate LFN in graphene devices. While their contribution to the bias dependence of LFN in long channels has been thoroughly investigated, the way in which VS phenomenon affects LFN in short channel devices under high drain voltage conditions has not been well understood. At low electric field operation, VS effect is negligible since carriers velocity is far away from being saturated. Under these conditions, LFN can be precicely predicted by a recently established physics-based analytical model. The present paper goes a step furher and proposes a new model which deals with the contribution of VS effect on LFN under high electric field conditions. The implemented model is validated with novel experimental data, published for the first time, from CVD grown back-gated single layer graphene transistors operating at gigahertz frequencies. The model accurately captures the reduction of LFN especially near charge neutrality point because of the effect of VS mechanism. Moreover, an analytical expression for the effect of contact resistance on LFN is derived. This contact resistance contribution is experimentally shown to be dominant at higher gate voltages and is accurately described by the proposed model.Comment: Main Manuscript:10 pages, 6 figure

    Peroxynitrite Activity of Hemin-Functionalized Reduced Graphene Oxide

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    Conducting interfaces modified with reduced graphene oxide (rGO) have shown improved electrochemical response for different analytes. The efficient formation of functionalized rGO based materials is thus of current interest for the development of sensitive and selective biosensors. Herein, we report a simple and environmentally friendly method for the formation of a hemin-functionalized rGO hybrid nanomaterial that exhibits remarkable sensitivity to peroxynitrite (ONOO−) in solution. The hemin-functionalized rGO hybrid nanomaterial was formed by mixing an aqueous solution of graphene oxide (GO) with hemin and sonicating the suspension for 5 h at room temperature. In addition to playing a key role in biochemical and electrocatalytic reactions, hemin has been proven to be a good reducing agent for GO. The sensitivity of the peroxynitrite sensor is ≈7.5 ± 1.5 nA mM−1 with a detection limit of 5 ± 1.5 nM

    Low-frequency noise parameter extraction method for single layer graphene FETs

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    In this paper, a detailed parameter extraction methodology is proposed for low-frequency noise (LFN) in single layer (SL) graphene transistors (GFETs) based on a recently established compact LFN model. Drain current and LFN of two short channel back-gated GFETs (L=300, 100 nm) were measured at lower and higher drain voltages, for a wide range of gate voltages covering the region away from charge neutrality point (CNP) up to CNP at p-type operation region. Current-voltage (IV) and LFN data were also available from a long channel SL top solution-gated (SG) GFET (L=5 um), for both p- and n-type regions near and away CNP. At each of these regimes, the appropriate IV and LFN parameters can be accurately extracted. Regarding LFN, mobility fluctuation effect is dominant at CNP and from there the Hooge parameter aH can be extracted while the carrier number fluctuation contribution which is responsible for the well-known M-shape bias dependence of output noise divided by squared drain current, also observed in our data, makes possible the extraction of the NT parameter related to the number of traps. In the less possible case of a Lambda-shape trend, NT and aH can be extracted simultaneously from the region near CNP. Away from CNP, contact resistance can have a significant contribution to LFN and from there the relevant parameter SDR^2 is defined. The LFN parameters described above can be estimated from the low drain voltage region of operation where the effect of Velocity Saturation (VS) mechanism is negligible. VS effect results in the reduction of LFN at higher drain voltages and from there the IV parameter hOmega which represents the phonon energy and is related to VS effect can be derived both from drain current and LFN data

    Socializing One Health: an innovative strategy to investigate social and behavioral risks of emerging viral threats

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    In an effort to strengthen global capacity to prevent, detect, and control infectious diseases in animals and people, the United States Agency for International Development’s (USAID) Emerging Pandemic Threats (EPT) PREDICT project funded development of regional, national, and local One Health capacities for early disease detection, rapid response, disease control, and risk reduction. From the outset, the EPT approach was inclusive of social science research methods designed to understand the contexts and behaviors of communities living and working at human-animal-environment interfaces considered high-risk for virus emergence. Using qualitative and quantitative approaches, PREDICT behavioral research aimed to identify and assess a range of socio-cultural behaviors that could be influential in zoonotic disease emergence, amplification, and transmission. This broad approach to behavioral risk characterization enabled us to identify and characterize human activities that could be linked to the transmission dynamics of new and emerging viruses. This paper provides a discussion of implementation of a social science approach within a zoonotic surveillance framework. We conducted in-depth ethnographic interviews and focus groups to better understand the individual- and community-level knowledge, attitudes, and practices that potentially put participants at risk for zoonotic disease transmission from the animals they live and work with, across 6 interface domains. When we asked highly-exposed individuals (ie. bushmeat hunters, wildlife or guano farmers) about the risk they perceived in their occupational activities, most did not perceive it to be risky, whether because it was normalized by years (or generations) of doing such an activity, or due to lack of information about potential risks. Integrating the social sciences allows investigations of the specific human activities that are hypothesized to drive disease emergence, amplification, and transmission, in order to better substantiate behavioral disease drivers, along with the social dimensions of infection and transmission dynamics. Understanding these dynamics is critical to achieving health security--the protection from threats to health-- which requires investments in both collective and individual health security. Involving behavioral sciences into zoonotic disease surveillance allowed us to push toward fuller community integration and engagement and toward dialogue and implementation of recommendations for disease prevention and improved health security

    Développement de dispositifs à base de composants 1D pour applications basse consommation et intelligence ambiante

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    Ce travail s'inscrit dans le cadre des études sur les moyens d'accéder à une forme d'intelligence ambiante. Il porte sur la réalisation par impression jet d'encre de composants micro-électronique à base de nanotube de carbone sur substrat souple.Dans un premier temps nous avons travaillé sur la mise au point de la technique d'impression jet d'encre. Des études portant sur l'influence de paramètres sur le profil des motifs imprimés ont été réalisées ( distance intergoutte, température du substrat, tension d'éjection, ). La seconde partie de cette thèse porte sur les moyens de réalisation de fines couches de nanotubes de carbone sur substrat souple. Deux méthodes ont été étudiées plus particulièrement, la méthode de dépôt par filtration/report ainsi que la méthode de dépôt assisté par APTS. La méthode par filtration/report se révèle en particulier prometteuse puisqu'elle permet rapidement d'obtenir une couche de 10 nanotubes/ m pour une épaisseur d'un nanotube.Finalement les connaissances issues de la première partie ont été mises en application pour réaliser des composants simples par impression tels que lignes coplanaires, antennes, capacités et autre.This work is part of studies on how to reach a form of ambient intelligence. It focuses on the realization of micro-electronics devices based on carbon nanotube on a flexible substrate and by inkjet printing.In a first part we worked on the development of the inkjet printing technique. Studies on the influence of parameters on the profile of a printed patterns have been performed (drop spacing, substrate temperature, firing voltage, ...).The second part of this thesis focuses on how to achieve thin layers of carbon nanotubes on flexible substrate. Two methods have been studied, the method of deposition by filtering/transfert report and the method of APTS assisted deposition. The filtering/transfert method is proving particularly promising since it allows to quickly obtain a layer of 10 nanotubes/ microns square with a thickness of one nanotube. Finally the knowledge from the first part were used to make simple printed components such as coplanar waveguide, antennas, capacitor and others.LILLE1-Bib. Electronique (590099901) / SudocSudocFranceF
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