Photoconductivity Parameters In Lithium Niobate

Measurements on a variety of doped (magnesium and/or iron) and undoped lithium niobate crystals in the oxidized state demonstrate an Arrhenius dependence of dark conductivity on reciprocal temperature between 460 and 590 K. All of the crystals had roughly the same conductivity and activation energy (1.21 eV) over the temperature range, implying that all have about the same free-carrier concentration and mobility. The enhanced photoconductivity of magnesium-doped lithium niobate is attributed to a greatly reduced trapping cross section of Fe3+ for electrons, the smaller cross section being due to a changed substitutional site for Fe3+. The Fe3+ trapping cross section is calculated from photoconductivity data to be of order 10-18 m2 in undoped lithium niobate. This implies a photoelectron lifetime of order 6x10-11 s in a relatively pure (2-ppm Fe) oxidized crystal

EPR identification of defects responsible for thermoluminescence in Cu-doped lithium tetraborate (Li2B4O7) crystals

Electron paramagnetic resonance (EPR) is used to identify the electron and hole traps responsible for thermoluminescence (TL) peaks occurring near 100 and 200 ◦C in copper-doped lithium tetraborate (Li2B4O7) crystals. As-grown crystals have Cu+ and Cu2+ ions substituting for lithium and have Cu+ ions at interstitial sites. All of the substitutional Cu2+ ions in the as-grown crystals have an adjacent lithium vacancy and give rise to a distinct EPR spectrum. Exposure to ionizing radiation at room temperature produces a second and different Cu2+ EPR spectrum when a hole is trapped by substitutional Cu+ ions that have no nearby defects. These two Cu2+ trapped-hole centers are referred to as Cu2+-VLi and Cu2+active, respectively. Also during the irradiation, two trapped-electron centers in the form of interstitial Cu0 atoms are produced when interstitial Cu+ ions trap electrons. They are observed with EPR and are labeled Cu0A and Cu0B. When an irradiated crystal is warmed from 25 to 150 ◦C, the Cu2+active centers have a partial decay step that correlates with the TL peak near 100 ◦C. The concentrations of Cu0A and Cu0B centers, however, increase as the crystal is heated through this range. As the crystal is futher warmed between 150 and 250 ◦C, the EPR signals from the Cu2+active hole centers and Cu0A and Cu0B electron centers decay simultaneously. This decay step correlates with the intense TL peak near 200 ◦C

Threshold Effect In Mg-doped Lithium Niobate

Optical absorption spectra were obtained after reducing (i.e., vacuum annealing) a series of LiNbO3 crystals grown from melts having various Mg concentrations and Li/Nb ratios. A band peaking at 500 nm, and assigned to oxygen vacancies containing two electrons, was the only absorption present in one set of crystals following reduction. In contrast, two overlapping bands peaking near 1200 and 760 nm were present in the other set of crystals immediately after the reduction. The 1200-nm band is assigned to a previously unreported electron trap and the 760-nm band to oxygen vacancies containing only one electron. These data are interpreted in terms of a threshold level for Mg doping; however, the threshold Mg doping level is not a constant but depends on the ratio of Mg ions to Li vacancies

Observation Of Singly Ionized Selenium Vacancies In Znse Grown By Molecular Beam Epitaxy

Electron paramagnetic resonance(EPR) has been used to investigate singly ionized selenium vacancy V Se + centers in ZnSe epilayers grown by molecular beam epitaxy(MBE). The study included undoped and nitrogen-doped films. Spectra taken at 8 K and 9.45 GHz, as the magnetic field was rotated in the plane from [100] to [010], showed an isotropic signal at g =2.0027±0.0004 with a linewidth of 5.8 G. In the two samples where this signal was observed, estimates of concentration were approximately 1.1×10 17 and 6.3×10 17 cm −3 . The appearance of the EPR signal correlated with an increase in the Zn/Se beam equivalent pressure ratio (during growth) in undoped films and with an increase in the nitrogen concentration in doped films. We conclude that the singly ionized selenium vacancy may be a dominant point defect in many MBE-grown ZnSe layers and that these defects may play a role in the compensation mechanisms in heavily nitrogen-doped ZnSe thin films

Electron paramagnetic resonance and optical absorption study of acceptors in CdSiP2 crystals

Cadmium silicon diphosphide (CdSiP2) is a nonlinear material often used in optical parametric oscillators (OPOs) to produce tunable laser output in the mid-infrared. Absorption bands associated with donors and acceptors may overlap the pump wave- length and adversely affect the performance of these OPOs. In the present investigation, electron paramagnetic resonance (EPR) is used to identify two unintentionally present acceptors in large CdSiP2 crystals. These are an intrinsic silicon-on-phosphorus anti- site and a copper impurity substituting for cadmium. When exposed to 633 nm laser light at temperatures near or below 80 K, they convert to their neutral paramagnetic charge states (Si0P and Cu0Cd) and can be monitored with EPR. The corresponding donor serving as the electron trap is the silicon-on-cadmium antisite (Si2+ before illumina- above 90 K quickly destroys the EPR signals from both acceptors and the associated donor. Broad optical absorption bands peaking near 0.8 and 1.4 μm are also pro- duced at low temperature by the 633 nm light. These absorption bands are associated with the Si0P and Cu0Cd acceptors. © 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/1.504180

Defect-related optical absorption bands in CdSiP2 crystals

When used as optical parametric oscillators, CdSiP2 crystals generate tunable output in the mid-infrared. Their performance, however, is often limited by unwanted optical absorption bands that overlap the pump wavelengths. A broad defect-related optical absorption band peaking near 800 nm, with a shoulder near 1 µm, can be photoinduced at room temperature in many CdSiP2 crystals. This absorption band is efficiently produced with 633 nm laser light and decays with a lifetime of ∼0.5 s after removal of the excitation light. The 800 nm band is accompanied by a less intense absorption band peaking near 1.90 µm. Data from eight CdSiP2 crystals grown at different times show that the singly ionized silicon vacancy (VSi− role= presentation style= box-sizing: border-box; display: inline; font-size: 12.880000114440918px; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative; \u3e−) is responsible for the photoinduced absorption bands. Electron paramagnetic resonance (EPR) is used to identify and directly monitor these silicon vacancies

Intrinsic Point Defects (Vacancies and Antisites) in CdGeP\u3csub\u3e2\u3c/sub\u3e Crystals

Cadmium germanium diphosphide (CdGeP2) crystals, with versatile terahertz-generating properties, belong to the chalcopyrite family of nonlinear optical materials. Other widely investigated members of this family are ZnGeP2 and CdSiP2. The room-temperature absorption edge of CdGeP2 is near 1.72 eV (720 nm). Cadmium vacancies, phosphorous vacancies, and germanium-on-cadmium antisites are present in as-grown CdGeP2 crystals. These unintentional intrinsic point defects are best studied below room temperature with electron paramagnetic resonance (EPR) and optical absorption. Prior to exposure to light, the defects are in charge states that have no unpaired spins. Illuminating a CdGeP2 crystal with 700 or 850 nm light while being held below 120 K produces singly ionized acceptors (VCd−) and singly ionized donors (GeCd+), as electrons move from VCd2− vacancies to GeCd2+ antisites. These defects become thermally unstable and return to their doubly ionized charge states in the 150–190 K range. In contrast, neutral phosphorous vacancies (VP0) are only produced with near-band-edge light when the crystal is held near or below 18 K. The VP0 donors are unstable at these lower temperatures and return to the singly ionized VP+ charge state when the light is removed. Spin-Hamiltonian parameters for the VCd− acceptors and VP0 donors are extracted from the angular dependence of their EPR spectra. Exposure at low-temperature to near-band-edge light also introduces broad optical absorption bands peaking near 756 and 1050 nm. A consistent picture of intrinsic defects in II-IV-P2 chalcopyrites emerges when the present CdGeP2 results are combined with earlier results from ZnGeP2, ZnSiP2, and CdSiP2

Transition-metal ions in β-Ga\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e crystals: Identification of Ni acceptors

Excerpt: Transition-metal ions (Ni, Cu, and Zn) in β-Ga2O3 crystals form deep acceptor levels in the lower half of the bandgap. In the present study, we characterize the Ni acceptors in a Czochralski-grown crystal and find that their (0/−) level is approximately 1.40 eV above the maximum of the valence band

Dual Role of Sb Ions as Electron Traps and Hole Traps in Photorefractive Sn2P2S6 Crystals

Doping photorefractive single crystals of Sn2P2S6 with antimony introduces both electron and hole traps. In as-grown crystals, Sb3+ (5s2 ) ions replace Sn2+ ions. These Sb3+ ions are either isolated (with no nearby perturbing defects) or they have a chargecompensating Sn2+ vacancy at a nearest-neighbor Sn site. When illuminated with 633 nm laser light, isolated Sb3+ ions trap electrons and become Sb2+ (5s2 5p1 ) ions. In contrast, Sb3+ ions with an adjacent Sn vacancy trap holes during illumination. The hole is primarily localized on the (P2S6) 4− anionic unit next to the Sb3+ ion and Sn2+ vacancy. These trapped electrons and holes are thermally stable below ∼200 K, and they are observed with electron paramagnetic resonance (EPR) at temperatures below 150 K. Resolved hyperfine interactions with 31P, 121Sb, and 123Sb nuclei are used to establish the defect models