Benchmarking Feature Extractors for Reinforcement Learning-Based Semiconductor Defect Localization

As semiconductor patterning dimensions shrink, more advanced Scanning Electron Microscopy (SEM) image-based defect inspection techniques are needed. Recently, many Machine Learning (ML)-based approaches have been proposed for defect localization and have shown impressive results. These methods often rely on feature extraction from a full SEM image and possibly a number of regions of interest. In this study, we propose a deep Reinforcement Learning (RL)-based approach to defect localization which iteratively extracts features from increasingly smaller regions of the input image. We compare the results of 18 agents trained with different feature extractors. We discuss the advantages and disadvantages of different feature extractors as well as the RL-based framework in general for semiconductor defect localization.Comment: 5 pages, 5 figures, 3 table

Automated Semiconductor Defect Inspection in Scanning Electron Microscope Images: a Systematic Review

A growing need exists for efficient and accurate methods for detecting defects in semiconductor materials and devices. These defects can have a detrimental impact on the efficiency of the manufacturing process, because they cause critical failures and wafer-yield limitations. As nodes and patterns get smaller, even high-resolution imaging techniques such as Scanning Electron Microscopy (SEM) produce noisy images due to operating close to sensitivity levels and due to varying physical properties of different underlayers or resist materials. This inherent noise is one of the main challenges for defect inspection. One promising approach is the use of machine learning algorithms, which can be trained to accurately classify and locate defects in semiconductor samples. Recently, convolutional neural networks have proved to be particularly useful in this regard. This systematic review provides a comprehensive overview of the state of automated semiconductor defect inspection on SEM images, including the most recent innovations and developments. 38 publications were selected on this topic, indexed in IEEE Xplore and SPIE databases. For each of these, the application, methodology, dataset, results, limitations and future work were summarized. A comprehensive overview and analysis of their methods is provided. Finally, promising avenues for future work in the field of SEM-based defect inspection are suggested.Comment: 16 pages, 12 figures, 3 table

SEMI-CenterNet: A Machine Learning Facilitated Approach for Semiconductor Defect Inspection

Continual shrinking of pattern dimensions in the semiconductor domain is making it increasingly difficult to inspect defects due to factors such as the presence of stochastic noise and the dynamic behavior of defect patterns and types. Conventional rule-based methods and non-parametric supervised machine learning algorithms like KNN mostly fail at the requirements of semiconductor defect inspection at these advanced nodes. Deep Learning (DL)-based methods have gained popularity in the semiconductor defect inspection domain because they have been proven robust towards these challenging scenarios. In this research work, we have presented an automated DL-based approach for efficient localization and classification of defects in SEM images. We have proposed SEMI-CenterNet (SEMI-CN), a customized CN architecture trained on SEM images of semiconductor wafer defects. The use of the proposed CN approach allows improved computational efficiency compared to previously studied DL models. SEMI-CN gets trained to output the center, class, size, and offset of a defect instance. This is different from the approach of most object detection models that use anchors for bounding box prediction. Previous methods predict redundant bounding boxes, most of which are discarded in postprocessing. CN mitigates this by only predicting boxes for likely defect center points. We train SEMI-CN on two datasets and benchmark two ResNet backbones for the framework. Initially, ResNet models pretrained on the COCO dataset undergo training using two datasets separately. Primarily, SEMI-CN shows significant improvement in inference time against previous research works. Finally, transfer learning (using weights of custom SEM dataset) is applied from ADI dataset to AEI dataset and vice-versa, which reduces the required training time for both backbones to reach the best mAP against conventional training method

YOLOv8 for Defect Inspection of Hexagonal Directed Self-Assembly Patterns: A Data-Centric Approach

Shrinking pattern dimensions leads to an increased variety of defect types in semiconductor devices. This has spurred innovation in patterning approaches such as Directed self-assembly (DSA) for which no traditional, automatic defect inspection software exists. Machine Learning-based SEM image analysis has become an increasingly popular research topic for defect inspection with supervised ML models often showing the best performance. However, little research has been done on obtaining a dataset with high-quality labels for these supervised models. In this work, we propose a method for obtaining coherent and complete labels for a dataset of hexagonal contact hole DSA patterns while requiring minimal quality control effort from a DSA expert. We show that YOLOv8, a state-of-the-art neural network, achieves defect detection precisions of more than 0.9 mAP on our final dataset which best reflects DSA expert defect labeling expectations. We discuss the strengths and limitations of our proposed labeling approach and suggest directions for future work in data-centric ML-based defect inspection.Comment: 8 pages, 10 figures, accepted for the 38th EMLC Conference 202

Perspective: Size selected clusters for catalysis and electrochemistry

Size-selected clusters containing a handful of atoms may possess noble catalytic properties different from nano-sized or bulk catalysts. Size- and composition-selected clusters can also serve as models of the catalytic active site, where an addition or removal of a single atom can have a dramatic effect on their activity and selectivity. In this perspective, we provide an overview of studies performed under both ultra-high vacuum and realistic reaction conditions aimed at the interrogation, characterization, and understanding of the performance of supported size-selected clusters in heterogeneous and electrochemical reactions, which address the effects of cluster size, cluster composition, cluster–support interactions, and reaction conditions, the key parameters for the understanding and control of catalyst functionality. Computational modeling based on density functional theory sampling of local minima and energy barriers or ab initio molecular dynamics simulations is an integral part of this research by providing fundamental understanding of the catalytic processes at the atomic level, as well as by predicting new materials compositions which can be validated in experiments. Finally, we discuss approaches which aim at the scale up of the production of well-defined clusters for use in real world applications

A high-speed tunable beam splitter for feed-forward photonic quantum information processing

We realize quantum gates for path qubits with a high-speed, polarization-independent and tunable beam splitter. Two electro-optical modulators act in a Mach-Zehnder interferometer as high-speed phase shifters and rapidly tune its splitting ratio. We test its performance with heralded single photons, observing a polarization-independent interference contrast above 95%. The switching time is about 5.6 ns, and a maximal repetition rate is 2.5 MHz. We demonstrate tunable feed-forward operations of a single-qubit gate of path-encoded qubits and a two-qubit gate via measurement-induced interaction between two photons

Nanoassemblies of ultrasmall clusters with remarkable activity in carbon dioxide conversion into C1 fuels

Cu nanoassemblies formed transiently during reaction from size-selected subnanometer Cu4 clusters supported on amorphous OH-terminated alumina convert CO2 into methanol and hydrocarbons under near-atmospheric pressure at rates considerably higher than those of individually standing Cu4 clusters. An in situ characterization reveals that the clusters self-assemble into 2D nanoassemblies at higher temperatures which then disintegrate upon cooling down to room temperature. DFT calculations postulate a formation mechanism of these nanoassemblies by hydrogen-bond bridges between the clusters and H2O molecules, which keep the building blocks together while preventing their coalescence

Experimental delayed-choice entanglement swapping

Motivated by the question, which kind of physical interactions and processes are needed for the production of quantum entanglement, Peres has put forward the radical idea of delayed-choice entanglement swapping. There, entanglement can be "produced a posteriori, after the entangled particles have been measured and may no longer exist". In this work we report the first realization of Peres' gedanken experiment. Using four photons, we can actively delay the choice of measurement-implemented via a high-speed tunable bipartite state analyzer and a quantum random number generator-on two of the photons into the time-like future of the registration of the other two photons. This effectively projects the two already registered photons onto one definite of two mutually exclusive quantum states in which either the photons are entangled (quantum correlations) or separable (classical correlations). This can also be viewed as "quantum steering into the past"