New Nanomagnetic Heterogeneous Cobalt Catalyst for the Synthesis of Aryl Nitriles and Biaryls

Cobalt nanoparticles immobilized on magnetic chitosan (Fe3O4@CS-Co) have been prepared. They were identified using various techniques such as Fourier-transform infrared spectroscopy, X-ray diffraction, field emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, transmission electron microscopy, thermogravimetric analysis, vibrating sample magnetometry, X-ray photoelectron spectroscopy, and inductively coupled plasma atomic emission spectroscopy analysis and applied efficiently as a cobalt catalyst in the cyanation and fluoride-/palladium-free Hiyama reactions of different types of aryl halides employing K4[Fe(CN)6]·3H2O and triethoxyphenylsilane, respectively. After each reaction, the catalyst was isolated and reused for the second run. The catalytic activity of the catalyst was not lost apparently even after five runs. No considerable changes in its chemical structure and morphology were observed. It is worth to note that in this paper, the cobalt catalyst has been used for the first time for the cyanation of aryl halides.Financial support for this project from the University of Birjand Research Council is acknowledged. Access to the XPS facilities of the Central Technical Services of the University of Alicante is appreciated

The power of light – From dental materials processing to diagnostics and therapeutics

Harnessing the power of light and its photonic energy is a powerful tool in biomedical applications. Its use ranges from biomaterials processing and fabrication of polymers to diagnostics and therapeutics. Dental light curable materials have evolved over several decades and now offer very fast (≤ 10 s) and reliable polymerization through depth (4–6 mm thick). This has been achieved by developments on two fronts: (1) chemistries with more efficient light absorption characteristics (camphorquinone [CQ], ~30 L mol-1 cm1[ʎmax 470 nm]; monoacylphosphine oxides [MAPO], ~800 L mol-1 cm-1 [ʎmax 385 nm]; bisacylphosphine oxide [BAPO], ~1,000 L mol-1 cm-1 [ʎmax 385 nm]) as well mechanistically efficient and prolonged radical generation processes during and after light irradiation, and; (2) introducing light curing technologies (light emitting diodes [LEDs] and less common lasers) with higher powers (≤ 2 W), better spectral range using multiple diodes (short: 390–405 nm; intermediate: 410–450 nm; and long: 450–480 nm), and better spatial power distribution (i.e. homogenous irradiance). However, adequate cure of materials falls short for several reasons, including improper selection of materials and lights, limitations in the chemistry of the materials, and limitations in delivering light through depth. Photonic energy has further applications in dentistry which include transillumination for diagnostics, and therapeutic applications that include photodynamic therapy, photobiomodulation, and photodisinfection. Light interactions with materials and biological tis-sues are complex and it is important to understand the advantages and limitations of these interactions for successful treatment outcomes. This article highlights the advent of photonic technologies in dentistry, its applications, the advantages and limitations, and possible future developments

Surface plasmon enhanced UV emission in AlGaN/GaN quantum well

The surface plasmon (SP) energy for resonant enhancement of light has shown to be modified by the epitaxial substrate and the overlying metalthin film. The modification of SP energy in AlGaN/GaN epitaxial layers is studied using spectroscopic ellipsometry for enhanced UV-light emission. Silver induced SP can be extended to the UV wavelength range by increasing the aluminum concentration in AlxGa1−xN epilayer. A threefold increase in the UV-light emission is observed from AlGaN/GaN quantum well due to silver induced SP. Photoluminescence lifetime measurements confirm the resonant plasmon induced increase in Purcell factor as observed from the PL intensity measurements

Larvicidal effects of Jatropha curcas L. against Anopheles arabiensis (Diptera: Culicidea)

Crude and column chromatographic fractions of methanol leaf extract of Jatropha curcas were tested for their larvicidal activities against laboratory reared late third instar larvae of Anopheles arabiensis. Crude methanol leaf extract of J .curcas had similar larvicidal activity to 0.5 ppm Temephos (positive control) at test concentrations ranging from 125 -1000 ppm while column chromatographic fractions (F1 and F2 ) of the crude methanol leaf extract of J.curcas showed similar larvicidal activities to 0.5 ppm Temephos at 62.5 and 125 ppm test concentrations. Column chromatographic fraction three (F3) showed similar larvicidal activity to 0.5 ppm Temephos at 125 ppm test concentration. The LC50 and LC90 values of crude methanol leaf extract of J.curcas were found to be 92.09 and 241.09 ppm, respectively. Toxic activities of column chromatographic fraction one (F1) (LC50=28.65 ppm; LC90 = 49.20 ppm) were nearly equal to that of column chromatographic fraction two [F2] (LC50= 30.40 ppm; LC90 = 49.80 ppm). Least toxicity on the test larvae was observed by column chromatographic fraction three [F3] (LC50 = 80.70 ppm; LC90 = 123.70 ppm). Thus, the larvicidal activity of crude methanol leaf extract was not due to the synergistic effects of its fractions. Further studies are recommended to identify larvicidal active ingredients from the active column chromatographic fractions of crude methanol leaf extract of J. curcas. Key words: Malaria vector control, Anopheles arabiensis, Botanical larvicides J. curca

Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure

Magnetotransport measurements on an In0.16Al0.84N/AlN/GaN gated Hall bar sample have been performed at 0.28 K. By the application of a gate voltage we were able to vary the total two-dimensional electron gas density from 1.83×1013 to 2.32×1013 cm−2. Two frequency Shubnikov–de Haas oscillations indicate occupation of two subbands by electrons. The density of electrons in the first and second sublevels are found to increase linearly with gate voltage with a slope of 2.01×1012 cm−2/V and 0.47×1012 cm−2/V, respectively. And the quantum lifetimes for the first and second subbands ranged from 0.55 to 0.95×10−13 s and from 1.2 to 2.1×10−13 s

Near-field optical spectroscopy and microscopy of self-assembled GaN∕AlN nanostructures

The spatial distribution and emission properties of small clusters of GaNquantum dots in an AlN matrix are studied using high-resolution electron and optical microscopy. High-resolution transmission electron microscopy reveals near vertical correlation among the GaNdots due to a sufficiently thin AlN spacer layer thickness, which allows strain induced stacking. Scanning electron and atomic force microscopy show lateral coupling due to a surface roughness of ∼50–60nm. Near-field photoluminescence in the illumination mode (both spatially and spectrally resolved) at 10K revealed emission from individual dots, which exhibits size distribution of GaNdots from localized sites in the stacked nanostructure. Strong spatial localization of the excitons is observed in GaNquantum dots formed at the tip of self-assembled hexagonal pyramid shapes with six [101¯1¯] facets

Security Aspects of Internet of Things aided Smart Grids: a Bibliometric Survey

The integration of sensors and communication technology in power systems, known as the smart grid, is an emerging topic in science and technology. One of the critical issues in the smart grid is its increased vulnerability to cyber threats. As such, various types of threats and defense mechanisms are proposed in literature. This paper offers a bibliometric survey of research papers focused on the security aspects of Internet of Things (IoT) aided smart grids. To the best of the authors' knowledge, this is the very first bibliometric survey paper in this specific field. A bibliometric analysis of all journal articles is performed and the findings are sorted by dates, authorship, and key concepts. Furthermore, this paper also summarizes the types of cyber threats facing the smart grid, the various security mechanisms proposed in literature, as well as the research gaps in the field of smart grid security.Comment: The paper is published in Elsevier's Internet of Things journal. 25 pages + 20 pages of reference

Readings on L2 reading: Publications in other venues 2021-2022

This feature offers an archive of articles published in other venues during the past year and serves as a valuable tool to readers of Reading in a Foreign Language (RFL). It treats any topic within the scope of RFL and second language reading. The articles are listed in alphabetical order, each with a complete reference as well as a brief summary. The editors of this feature attempt to include all related articles that appear in other venues. However, undoubtedly, this list is not exhaustive

Investigation of inversion domains in GaN by electric-force microscopy

Inversion domains in III-nitride semiconductors degrade the performance of devicesfabricated in them. Consequently, it is imperative that we understand their electrostatic manifestation, the growth conditions under which such domains form, and an effective means of their identification. In what is nominally referred to as Ga-polarity samples, N-polarity domains have a polarization that is reversed with respect to the remainder of the surface, and therefore, have a different potential under strain. We have used surface-potential electric-force microscopy (SP-EFM) to image the electrostaticsurface potential of GaNgrown on sapphire, which is strained due to the thermal mismatch between the substrate and GaN. Employing a control sample with side-by-side Ga- and N-polarity regions, we have established the EFM mode necessary to identify inversion domains on GaN samples grown by molecular-beam epitaxy. This method is not sensitive to topology and has a spatial resolution of under 100 nm. The measured surface potentials for Ga-face and N-face regions are +25±10 and −30±10 mV, respectively, with respect to the sapphire substrate, where the sign is consistent with Ga- and N-polarity GaN under compressive strain due to thermal mismatch with the sapphire substrate