Photoreceptor spectral tuning by colorful, multilayered facet lenses in long-legged fly eyes (Dolichopodidae)

The facet lenses of the compound eyes of long-legged flies (Dolichopodidae) feature a striking, interlaced coloration pattern, existing of alternating rows of green-yellow and orange-red reflecting facets, due to dielectric multilayers located distally in the facet lenses (Bernard and Miller. Invest Ophthalmol 7:416-434 (1968). We investigated this phenomenon in the dolichopodid Dolichopus nitidus by applying microspectrophotometry, electron microscopy and optical modeling. The measured narrow-band reflectance spectra, peaking at similar to 540 and similar to 590 nm with bandwidth similar to 105 nm, are well explained by a refractive index oscillating sinusoidally in six periods around a mean value of about 1.44 with amplitude 0.6. The facet lens reflectance spectra are associated with a spectrally restricted, reduced transmittance, which causes modified spectral sensitivities of the underlying photoreceptors. Based on the modeling and electroretinography of the dolichopodid Condylostylus japonicus we conjecture that the green and orange facets narrow the spectral bandwidths of blue and green central photoreceptors, respectively, thus possibly improving color and/or polarization vision.</p

Symmetric Kondo Lattice States in Doped Strained Twisted Bilayer Graphene

We use the topological heavy fermion (THF) model and its Kondo Lattice (KL) formulation to study the symmetric Kondo state in twisted bilayer graphene. Via a large-N approximation, we find a symmetric Kondo (SK) state in KL mode at fillings $\nu=0,\pm 1,\pm 2$. In the SK state, all symmetries are preserved and the local moments are Kondo screened by the conduction electrons. At the mean-field level of the THF model at $\nu=0,\pm 1, \pm 2, \pm 3$, we also find a similar symmetric state. We study the stability of the symmetric state by comparing its energy with the ordered states and find the ordered states to have lower energy. However, moving away from integer fillings by doping holes to the light bands, we find the energy difference is reduced, which suggests the loss of ordering and a tendency towards Kondo screening. In order to include many-body effects beyond the mean-field approximation, we perform dynamical mean-field theory (DMFT) calculations on the THF model. We find the spin susceptibility follows a Curie behavior at $\nu=0, \pm 1,\pm 2$ down to $\sim 2\text{K}$ where the onset of screening of the local moment becomes visible. This hints to very low Kondo temperatures at these fillings, in agreement with the outcome of our mean-field calculations. At non-integer filling $\nu=\pm 0.5,\pm 0.8,\pm 1.2$ DMFT shows deviations from a $1/T$-susceptibility at much higher temperatures, suggesting a more effective screening of local moments with doping. Finally, we study the effect of a $C_{3z}$-rotational-symmetry-breaking strain via mean-field approaches and find that a symmetric phase (that only breaks $C_{3z}$ symmetry) can be stabilized at sufficiently large strain at $\nu=0,\pm 1, \pm 2$. Our results suggest that a symmetric Kondo phase is strongly suppressed at integer fillings, but could be stabilized either at non-integer fillings or by applying strain.Comment: 40 pages, 15 figure

Electron waves in chemically substituted graphene

We present exact analytical and numerical results for the electronic spectra and the Friedel oscillations around a substitutional impurity atom in a graphene lattice. A chemical dopant in graphene introduces changes in the on-site potential as well as in the hopping amplitude. We employ a T-matrix formalism and find that disorder in the hopping introduces additional interference terms around the impurity that can be understood in terms of bound, semi-bound, and unbound processes for the Dirac electrons. These interference effects can be detected by scanning tunneling microscopy.Comment: 4 pages, 7 figure

Atomic Hole Doping of Graphene

Graphene is an excellent candidate for the next generation of electronic materials due to the strict two-dimensionality of its electronic structure as well as the extremely high carrier mobility. A prerequisite for the development of graphene based electronics is the reliable control of the type and density of the charge carriers by external (gate) and internal (doping) means. While gating has been successfully demonstrated for graphene flakes and epitaxial graphene on silicon carbide, the development of reliable chemical doping methods turns out to be a real challenge. In particular hole doping is an unsolved issue. So far it has only been achieved with reactive molecular adsorbates, which are largely incompatible with any device technology. Here we show by angle-resolved photoemission spectroscopy that atomic doping of an epitaxial graphene layer on a silicon carbide substrate with bismuth, antimony or gold presents effective means of p-type doping. Not only is the atomic doping the method of choice for the internal control of the carrier density. In combination with the intrinsic n-type character of epitaxial graphene on SiC, the charge carriers can be tuned from electrons to holes, without affecting the conical band structure

Electrical and thermoelectrical transport in Dirac fermions through a quantum dot

We investigate the conductance and thermopower of massless Dirac fermions through a quantum dot using a pseudogap Anderson model in the non-crossing approximation. When the Fermi level is at the Dirac point, the conductance has a cusp where the thermopower changes its sign. When the Fermi level is away from the Dirac point, the Kondo temperature illustrates a quantum impurity transition between an asymmetric strong coupling Kondo state and a localized moment state. The conductance shows a peak near this transition and reaches the unitary limit at low temperatures. The magnitude of the thermopower exceeds $k_B/e$, and the thermoelectric figure of merit exceeds unity.Comment: 5 pages, 4 figure

Room-temperature ferromagnetism in graphite driven by 2D networks of point defects

Ferromagnetism in carbon-based materials is appealing for both applications and fundamental science purposes because carbon is a light and bio-compatible material that contains only s and p electrons in contrast to traditional ferromagnets based on 3d or 4f electrons. Here we demonstrate direct evidence for ferromagnetic order locally at defect structures in highly oriented pyrolytic graphite (HOPG) with magnetic force microscopy and in bulk magnetization measurements at room temperature. Magnetic impurities have been excluded as the origin of the magnetic signal after careful analysis supporting an intrinsic magnetic behavior of carbon. The observed ferromagnetism has been attributed to originate from unpaired electron spins localized at grain boundaries of HOPG. Grain boundaries form two-dimensional arrays of point defects, where their spacing depends on the mutual orientation of two grains. Depending on the distance between these point defects, scanning tunneling spectroscopy of grain boundaries showed two intense split localized states for small distances between defects (< 4 nm) and one localized state at the Fermi level for large distances between defects (> 4 nm).Comment: 19 pages, 5 figure